Fluid ejection device

ABSTRACT

A fluid ejection device having firing cells, signal lines configured to receive a series of pulses, and an address generator configured to receive pulses from the series of pulses and generate a set of address signals in response to the received pulses, wherein the set of address signals is adapted to enable the firing cells for activation.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of the U.S. application Ser. No.10/827,163, filed on Apr. 19, 2004, now U.S. Pat. No. 7,384,113 entitled“Fluid Ejection Device With Address Generator”, by Benjamin et al.,which is assigned to the assignee of the present invention and herebyincorporated by reference herein in its entirety.

BACKGROUND

An inkjet printing system, as one embodiment of a fluid ejection system,may include a printhead, an ink supply that provides liquid ink to theprinthead, and an electronic controller that controls the printhead. Theprinthead, as one embodiment of a fluid ejection device, ejects inkdrops through a plurality of orifices or nozzles. The ink is projectedtoward a print medium, such as a sheet of paper, to print an image ontothe print medium. The nozzles are typically arranged in one or morearrays, such that properly sequenced ejection of ink from the nozzlescauses characters or other images to be printed on the print medium asthe printhead and the print medium are moved relative to each other.

In a typical thermal inkjet printing system, the printhead ejects inkdrops through nozzles by rapidly heating small volumes of ink located invaporization chambers. The ink is heated with small electric heaters,such as thin film resistors referred to herein as firing resistors.Heating the ink causes the ink to vaporize and be ejected through thenozzles.

To eject one drop of ink, the electronic controller that controls theprinthead activates an electrical current from a power supply externalto the printhead. The electrical current is passed through a selectedfiring resistor to heat the ink in a corresponding selected vaporizationchamber and eject the ink through a corresponding nozzle. Known dropgenerators include a firing resistor, a corresponding vaporizationchamber, and a corresponding nozzle.

As inkjet printheads have evolved, the number of drop generators in aprinthead has increased to improve printing speed and/or quality. Theincrease in the number of drop generators per printhead has resulted ina corresponding increase in the number of input pads required on aprinthead die to energize the increased number of firing resistors. Inone type of printhead, each firing resistor is coupled to acorresponding input pad to provide power to energize the firingresistor. One input pad per firing resistor becomes impractical as thenumber of firing resistors increases.

The number of drop generators per input pad is significantly increasedin another type of printhead having primitives. A single power leadprovides power to all firing resistors in one primitive. Each firingresistor is coupled in series with the power lead and the drain-sourcepath of a corresponding field effect transistor (FET). The gate of eachFET in a primitive is coupled to a separately energizable address leadthat is shared by multiple primitives.

Manufacturers continue reducing the number of input pads and increasingthe number of drop generators on a printhead die. A printhead with fewerinput pads typically costs less than a printhead with more input pads.Also, a printhead with more drop generators typically prints with higherquality and/or printing speed. To maintain costs and provide aparticular printing swath height, printhead die size may notsignificantly change with an increased number of drop generators. Asdrop generator densities increase and the number of input pads decrease,printhead die layouts can become increasingly complex.

For these and other reasons, there is a need for the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates one embodiment of an ink jet printing system.

FIG. 2 is a diagram illustrating a portion of one embodiment of aprinthead die.

FIG. 3 is a diagram illustrating a layout of drop generators locatedalong an ink feed slot in one embodiment of a printhead die.

FIG. 4 is a diagram illustrating one embodiment of a firing cellemployed in one embodiment of a printhead die.

FIG. 5 is a schematic diagram illustrating one embodiment of an ink jetprinthead firing cell array.

FIG. 6 is a schematic diagram illustrating one embodiment of apre-charged firing cell.

FIG. 7 is a schematic diagram illustrating one embodiment of an ink jetprinthead firing cell array.

FIG. 8 is a timing diagram illustrating the operation of one embodimentof a firing cell array.

FIG. 9 is a diagram illustrating one embodiment of an address generatorin a printhead die.

FIG. 10A is a diagram illustrating one shift register cell in a shiftregister.

FIG. 10B is a diagram illustrating a direction circuit.

FIG. 11 is a timing diagram illustrating operation of an addressgenerator in the forward direction.

FIG. 12 is a timing diagram illustrating operation of an addressgenerator in the reverse direction.

FIG. 13 is a block diagram illustrating one embodiment of two addressgenerators and six fire groups in a printhead die.

FIG. 14 is a timing diagram illustrating forward and reverse operationof address generators in a printhead die.

FIG. 15 is a block diagram illustrating one embodiment of an addressgenerator, a latch circuit and six fire groups in a printhead die.

FIG. 16 is a diagram illustrating one embodiment of a latch register.

FIG. 17 is a timing diagram illustrating an example operation of oneembodiment of a latch register.

FIG. 18 is a diagram illustrating one embodiment of a single directionshift register cell.

FIG. 19 is a diagram illustrating an address generator that uses thesingle direction shift register cell to provide addresses in forward andreverse directions.

FIG. 20 is a diagram illustrating an address generator that uses thesingle direction shift register cell in one shift register to provideaddresses in forward and reverse directions.

FIG. 21 is a diagram illustrating an example layout of one embodiment ofa printhead die.

FIG. 22 is a diagram illustrating another aspect of the example layoutof one embodiment of a printhead die.

FIG. 23 is a diagram illustrating a plan view of a section of oneembodiment of a printhead die.

FIG. 24 is a diagram illustrating an example layout of anotherembodiment of a printhead die.

FIGS. 25A and 25B are diagrams illustrating contact areas of a flexcircuit that may be utilized to couple external circuitry to a printheaddie.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part hereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top,”“bottom,” “front,” “back,” “leading,” “trailing,” etc., is used withreference to the orientation of the Figure(s) being described. Becausecomponents of embodiments of the present invention can be positioned ina number of different orientations, the directional terminology is usedfor purposes of illustration and is in no way limiting. It is to beunderstood that other embodiments may be utilized and structural orlogical changes may be made without departing from the scope of thepresent invention. The following detailed description, therefore, is notto be taken in a limiting sense, and the scope of the present inventionis defined by the appended claims.

FIG. 1 illustrates one embodiment of an inkjet printing system 20.Inkjet printing system 20 constitutes one embodiment of a fluid ejectionsystem that includes a fluid ejection device, such as inkjet printheadassembly 22, and a fluid supply assembly, such as ink supply assembly24. The inkjet printing system 20 also includes a mounting assembly 26,a media transport assembly 28, and an electronic controller 30. At leastone power supply 32 provides power to the various electrical componentsof inkjet printing system 20.

In one embodiment, inkjet printhead assembly 22 includes at least oneprinthead or printhead die 40 that ejects drops of ink through aplurality of orifices or nozzles 34 toward a print medium 36 so as toprint onto print medium 36. Printhead 40 is one embodiment of a fluidejection device. Print medium 36 may be any type of suitable sheetmaterial, such as paper, card stock, transparencies, Mylar, fabric, andthe like. Typically, nozzles 34 are arranged in one or more columns orarrays such that properly sequenced ejection of ink from nozzles 34causes characters, symbols, and/or other graphics or images to beprinted upon print medium 36 as inkjet printhead assembly 22 and printmedium 36 are moved relative to each other. While the followingdescription refers to the ejection of ink from printhead assembly 22, itis understood that other liquids, fluids or flowable materials,including clear fluid, may be ejected from printhead assembly 22.

Ink supply assembly 24 as one embodiment of a fluid supply assemblyprovides ink to printhead assembly 22 and includes a reservoir 38 forstoring ink. As such, ink flows from reservoir 38 to inkjet printheadassembly 22. Ink supply assembly 24 and inkjet printhead assembly 22 canform either a one-way ink delivery system or a recirculating inkdelivery system. In a one-way ink delivery system, substantially all ofthe ink provided to inkjet printhead assembly 22 is consumed duringprinting. In a recirculating ink delivery system, only a portion of theink provided to printhead assembly 22 is consumed during printing. Assuch, ink not consumed during printing is returned to ink supplyassembly 24.

In one embodiment, inkjet printhead assembly 22 and ink supply assembly24 are housed together in an inkjet cartridge or pen. The inkjetcartridge or pen is one embodiment of a fluid ejection device. Inanother embodiment, ink supply assembly 24 is separate from inkjetprinthead assembly 22 and provides ink to inkjet printhead assembly 22through an interface connection, such as a supply tube (not shown). Ineither embodiment, reservoir 38 of ink supply assembly 24 may beremoved, replaced, and/or refilled. In one embodiment, where inkjetprinthead assembly 22 and ink supply assembly 24 are housed together inan inkjet cartridge, reservoir 38 includes a local reservoir locatedwithin the cartridge and may also include a larger reservoir locatedseparately from the cartridge. As such, the separate, larger reservoirserves to refill the local reservoir. Accordingly, the separate, largerreservoir and/or the local reservoir may be removed, replaced, and/orrefilled.

Mounting assembly 26 positions inkjet printhead assembly 22 relative tomedia transport assembly 28 and media transport assembly 28 positionsprint medium 36 relative to inkjet printhead assembly 22. Thus, a printzone 37 is defined adjacent to nozzles 34 in an area between inkjetprinthead assembly 22 and print medium 36. In one embodiment, inkjetprinthead assembly 22 is a scanning type printhead assembly. As such,mounting assembly 26 includes a carriage (not shown) for moving inkjetprinthead assembly 22 relative to media transport assembly 28 to scanprint medium 36. In another embodiment, inkjet printhead assembly 22 isa non-scanning type printhead assembly. As such, mounting assembly 26fixes inkjet printhead assembly 22 at a prescribed position relative tomedia transport assembly 28. Thus, media transport assembly 28 positionsprint medium 36 relative to inkjet printhead assembly 22.

Electronic controller or printer controller 30 typically includes aprocessor, firmware, and other electronics, or any combination thereof,for communicating with and controlling inkjet printhead assembly 22,mounting assembly 26, and media transport assembly 28. Electroniccontroller 30 receives data 39 from a host system, such as a computer,and usually includes memory for temporarily storing data 39. Typically,data 39 is sent to inkjet printing system 20 along an electronic,infrared, optical, or other information transfer path. Data 39represents, for example, a document and/or file to be printed. As such,data 39 forms a print job for inkjet printing system 20 and includes oneor more print job commands and/or command parameters.

In one embodiment, electronic controller 30 controls inkjet printheadassembly 22 for ejection of ink drops from nozzles 34. As such,electronic controller 30 defines a pattern of ejected ink drops thatform characters, symbols, and/or other graphics or images on printmedium 36. The pattern of ejected ink drops is determined by the printjob commands and/or command parameters.

In one embodiment, inkjet printhead assembly 22 includes one printhead40. In another embodiment, inkjet printhead assembly 22 is a wide-arrayor multi-head printhead assembly. In one wide-array embodiment, inkjetprinthead assembly 22 includes a carrier, which carries printhead dies40, provides electrical communication between printhead dies 40 andelectronic controller 30, and provides fluidic communication betweenprinthead dies 40 and ink supply assembly 24.

FIG. 2 is a diagram illustrating a portion of one embodiment of aprinthead die 40. The printhead die 40 includes an array of printing orfluid ejecting elements 42. Printing elements 42 are formed on asubstrate 44, which has an ink feed slot 46 formed therein. As such, inkfeed slot 46 provides a supply of liquid ink to printing elements 42.Ink feed slot 46 is one embodiment of a fluid feed source. Otherembodiments of fluid feed sources include but are not limited tocorresponding individual ink feed holes feeding correspondingvaporization chambers and multiple shorter ink feed trenches that eachfeed corresponding groups of fluid ejecting elements. A thin-filmstructure 48 has an ink feed channel 54 formed therein whichcommunicates with ink feed slot 46 formed in substrate 44. An orificelayer 50 has a front face 50 a and a nozzle opening 34 formed in frontface 50 a. Orifice layer 50 also has a nozzle chamber or vaporizationchamber 56 formed therein which communicates with nozzle opening 34 andink feed channel 54 of thin-film structure 48. A firing resistor 52 ispositioned within vaporization chamber 56 and leads 58 electricallycouple firing resistor 52 to circuitry controlling the application ofelectrical current through selected firing resistors. A drop generator60 as referred to herein includes firing resistor 52, nozzle chamber orvaporization chamber 56 and nozzle opening 34.

During printing, ink flows from ink feed slot 46 to vaporization chamber56 via ink feed channel 54. Nozzle opening 34 is operatively associatedwith firing resistor 52 such that droplets of ink within vaporizationchamber 56 are ejected through nozzle opening 34 (e.g., substantiallynormal to the plane of firing resistor 52) and toward print medium 36upon energizing of firing resistor 52.

Example embodiments of printhead dies 40 include a thermal printhead, apiezoelectric printhead, an electrostatic printhead, or any other typeof fluid ejection device known in the art that can be integrated into amulti-layer structure. Substrate 44 is formed, for example, of silicon,glass, ceramic, or a stable polymer and thin-film structure 48 is formedto include one or more passivation or insulation layers of silicondioxide, silicon carbide, silicon nitride, tantalum, polysilicon glass,or other suitable material. Thin-film structure 48, also, includes atleast one conductive layer, which defines firing resistor 52 and leads58. In one embodiment, the conductive layer comprises, for example,aluminum, gold, tantalum, tantalum-aluminum, or other metal or metalalloy. In one embodiment, firing cell circuitry, such as described indetail below, is implemented in substrate and thin-film layers, such assubstrate 44 and thin-film structure 48.

In one embodiment, orifice layer 50 comprises a photoimageable epoxyresin, for example, an epoxy referred to as SU8, marketed by Micro-Chem,Newton, Mass. Exemplary techniques for fabricating orifice layer 50 withSU8 or other polymers are described in detail in U.S. Pat. No.6,162,589, which is herein incorporated by reference. In one embodiment,orifice layer 50 is formed of two separate layers referred to as abarrier layer (e.g., a dry film photo resist barrier layer) and a metalorifice layer (e.g., a nickel, copper, iron/nickel alloys, palladium,gold, or rhodium layer) formed over the barrier layer. Other suitablematerials, however, can be employed to form orifice layer 50.

FIG. 3 is a diagram illustrating drop generators 60 located along inkfeed slot 46 in one embodiment of printhead die 40. Ink feed slot 46includes opposing ink feed slot sides 46 a and 46 b. Drop generators 60are disposed along each of the opposing ink feed slot sides 46 a and 46b. A total of n drop generators 60 are located along ink feed slot 46,with m drop generators 60 located along ink feed slot side 46 a, and n−mdrop generators 60 located along ink feed slot side 46 b. In oneembodiment, n equals 200 drop generators 60 located along ink feed slot46 and m equals 100 drop generators 60 located along each of theopposing ink feed slot sides 46 a and 46 b. In other embodiments, anysuitable number of drop generators 60 can be disposed along ink feedslot 46.

Ink feed slot 46 provides ink to each of the n drop generators 60disposed along ink feed slot 46. Each of the n drop generators 60includes a firing resistor 52, a vaporization chamber 56 and a nozzle34. Each of the n vaporization chambers 56 is fluidically coupled to inkfeed slot 46 through at least one ink feed channel 54. The firingresistors 52 of drop generators 60 are energized in a controlledsequence to eject fluid from vaporization chambers 56 and throughnozzles 34 to print an image on print medium 36.

FIG. 4 is a diagram illustrating one embodiment of a firing cell 70employed in one embodiment of printhead die 40. Firing cell 70 includesa firing resistor 52, a resistor drive switch 72, and a memory circuit74. Firing resistor 52 is part of a drop generator 60. Drive switch 72and memory circuit 74 are part of the circuitry that controls theapplication of electrical current through firing resistor 52. Firingcell 70 is formed in thin-film structure 48 and on substrate 44.

In one embodiment, firing resistor 52 is a thin-film resistor and driveswitch 72 is a field effect transistor (FET). Firing resistor 52 iselectrically coupled to a fire line 76 and the drain-source path ofdrive switch 72. The drain-source path of drive switch 72 is alsoelectrically coupled to a reference line 78 that is coupled to areference voltage, such as ground. The gate of drive switch 72 iselectrically coupled to memory circuit 74 that controls the state ofdrive switch 72.

Memory circuit 74 is electrically coupled to a data line 80 and enablelines 82. Data line 80 receives a data signal that represents part of animage and enable lines 82 receive enable signals to control operation ofmemory circuit 74. Memory circuit 74 stores one bit of data as it isenabled by the enable signals. The logic level of the stored data bitsets the state (e.g., on or off, conducting or non-conducting) of driveswitch 72. The enable signals can include one or more select signals andone or more address signals.

Fire line 76 receives an energy signal comprising energy pulses andprovides an energy pulse to firing resistor 52. In one embodiment, theenergy pulses are provided by electronic controller 30 to have timedstarting times and timed duration to provide a proper amount of energyto heat and vaporize fluid in the vaporization chamber 56 of a dropgenerator 60. If drive switch 72 is on (conducting), the energy pulseheats firing resistor 52 to heat and eject fluid from drop generator 60.If drive switch 72 is off (non-conducting), the energy pulse does notheat firing resistor 52 and the fluid remains in drop generator 60.

FIG. 5 is a schematic diagram illustrating one embodiment of an inkjetprinthead firing cell array, indicated at 100. Firing cell array 100includes a plurality of firing cells 70 arranged into n fire groups 102a-102 n. In one embodiment, firing cells 70 are arranged into six firegroups 102 a-102 n. In other embodiments, firing cells 70 can bearranged into any suitable number of fire groups 102 a-102 n, such asfour or more fire groups 102 a-102 n.

The firing cells 70 in array 100 are schematically arranged into L rowsand m columns. The L rows of firing cells 70 are electrically coupled toenable lines 104 that receive enable signals. Each row of firing cells70, referred to herein as a row subgroup or subgroup of firing cells 70,is electrically coupled to one set of subgroup enable lines 106 a-106L.The subgroup enable lines 106 a-106L receive subgroup enable signalsSG1, SG2, . . . SG_(L) that enable the corresponding subgroup of firingcells 70.

The m columns are electrically coupled to m data lines 108 a-108 m thatreceive data signals D1, D2 . . . Dm, respectively. Each of the mcolumns includes firing cells 70 in each of the n fire groups 102 a-102n and each column of firing cells 70, referred to herein as a data linegroup or data group, is electrically coupled to one of the data lines108 a-108 m. In other words, each of the data lines 108 a-108 m iselectrically coupled to each of the firing cells 70 in one column,including firing cells 70 in each of the fire groups 102 a-102 n. Forexample, data line 108 a is electrically coupled to each of the firingcells 70 in the far left column, including firing cells 70 in each ofthe fire groups 102 a-102 n. Data line 108 b is electrically coupled toeach of the firing cells 70 in the adjacent column and so on, over toand including data line 108 m that is electrically coupled to each ofthe firing cells 70 in the far right column, including firing cells 70in each of the fire groups 102 a-102 n.

In one embodiment, array 100 is arranged into six fire groups 102 a-102n and each of the six fire groups 102 a-102 n includes 13 subgroups andeight data line groups. In other embodiments, array 100 can be arrangedinto any suitable number of fire groups 102 a-102 n and into anysuitable number of subgroups and data line groups. In any embodiment,fire groups 102 a-102 n are not limited to having the same number ofsubgroups and data line groups. Instead, each of the fire groups 102a-102 n can have a different number of subgroups and/or data line groupsas compared to any other fire group 102 a-102 n. In addition, eachsubgroup can have a different number of firing cells 70 as compared toany other subgroup, and each data line group can have a different numberof firing cells 70 as compared to any other data line group.

The firing cells 70 in each of the fire groups 102 a-102 n areelectrically coupled to one of the fire lines 110 a-110 n. In fire group102 a, each of the firing cells 70 is electrically coupled to fire line110 a that receives fire signal or energy signal FIRE1. In fire group102 b, each of the firing cells 70 is electrically coupled to fire line110 b that receives fire signal or energy signal FIRE2 and so on, up toand including fire group 102 n wherein each of the firing cells 70 iselectrically coupled to fire line 110 n that receives fire signal orenergy signal FIREn. In addition, each of the firing cells 70 in each ofthe fire groups 102 a-102 n is electrically coupled to a commonreference line 112 that is tied to ground.

In operation, subgroup enable signals SG1, SG2, . . . SG_(L) areprovided on subgroup enable lines 106 a-106L to enable one subgroup offiring cells 70. The enabled firing cells 70 store data signals D1, D2 .. . Dm provided on data lines 108 a-108 m. The data signals D1, D2 . . .Dm are stored in memory circuits 74 of enabled firing cells 70. Each ofthe stored data signals D1, D2 . . . Dm sets the state of drive switch72 in one of the enabled firing cells 70. The drive switch 72 is set toconduct or not conduct based on the stored data signal value.

After the states of the selected drive switches 72 are set, an energysignal FIRE1-FIREn is provided on the fire line 110 a-110 ncorresponding to the fire group 102 a-102 n that includes the selectedsubgroup of firing cells 70. The energy signal FIRE1-FIREn includes anenergy pulse. The energy pulse is provided on the selected fire line 110a-110 n to energize firing resistors 52 in firing cells 70 that haveconducting drive switches 72. The energized firing resistors 52 heat andeject ink onto print medium 36 to print an image represented by datasignals D1, D2 . . . Dm. The process of enabling a subgroup of firingcells 70, storing data signals D1, D2 . . . Dm in the enabled subgroupand providing an energy signal FIRE1-FIREn to energize firing resistors52 in the enabled subgroup continues until printing stops.

In one embodiment, as an energy signal FIRE1-FIREn is provided to aselected fire group 102 a-102 n, subgroup enable signals SG1, SG2, . . .SG_(L) change to select and enable another subgroup in a different firegroup 102 a-102 n. The newly enabled subgroup stores data signals D1, D2. . . Dm provided on data lines 108 a-108 m and an energy signalFIRE1-FIREn is provided on one of the fire lines 110 a-110 n to energizefiring resistors 52 in the newly enabled firing cells 70. At any onetime, only one subgroup of firing cells 70 is enabled by subgroup enablesignals SG1, SG2, . . . SG_(L) to store data signals D1, D2 . . . Dmprovided on data lines 108 a-108 m. In this aspect, data signals D1, D2. . . Dm on data lines 108 a-108 m are timed division multiplexed datasignals. Also, only one subgroup in a selected fire group 102 a-102 nincludes drive switches 72 that are set to conduct while an energysignal FIRE1-FIREn is provided to the selected fire group 102 a-102 n.However, energy signals FIRE1-FIREn provided to different fire groups102 a-102 n can and do overlap.

FIG. 6 is a schematic diagram illustrating one embodiment of apre-charged firing cell 120. Pre-charged firing cell 120 is oneembodiment of firing cell 70. The pre-charged firing cell 120 includes adrive switch 172 electrically coupled to a firing resistor 52. In oneembodiment, drive switch 172 is a FET including a drain-source pathelectrically coupled at one end to one terminal of firing resistor 52and at the other end to a reference line 122. The reference line 122 istied to a reference voltage, such as ground. The other terminal offiring resistor 52 is electrically coupled to a fire line 124 thatreceives a fire signal or energy signal FIRE including energy pulses.The energy pulses energize firing resistor 52 if drive switch 172 is on(conducting).

The gate of drive switch 172 forms a storage node capacitance 126 thatfunctions as a memory element to store data pursuant to the sequentialactivation of a pre-charge transistor 128 and a select transistor 130.The drain-source path and gate of pre-charge transistor 128 areelectrically coupled to a pre-charge line 132 that receives a pre-chargesignal. The gate of drive switch 172 is electrically coupled to thedrain-source path of pre-charge transistor 128 and the drain-source pathof select transistor 130. The gate of select transistor 130 iselectrically coupled to a select line 134 that receives a select signal.The storage node capacitance 126 is shown in dashed lines, as it is partof drive switch 172. Alternatively, a capacitor separate from driveswitch 172 can be used as a memory element.

A data transistor 136, a first address transistor 138 and a secondaddress transistor 140 include drain-source paths that are electricallycoupled in parallel. The parallel combination of data transistor 136,first address transistor 138 and second address transistor 140 iselectrically coupled between the drain-source path of select transistor130 and reference line 122. The serial circuit including selecttransistor 130 coupled to the parallel combination of data transistor136, first address transistor 138 and second address transistor 140 iselectrically coupled across node capacitance 126 of drive switch 172.The gate of data transistor 136 is electrically coupled to data line 142that receives data signals ˜DATA. The gate of first address transistor138 is electrically coupled to an address line 144 that receives addresssignals ˜ADDRESS1 and the gate of second address transistor 140 iselectrically coupled to a second address line 146 that receives addresssignals ˜ADDRESS2. The data signals ˜DATA and address signals ˜ADDRESS1and ˜ADDRESS2 are active when low as indicated by the tilda (˜) at thebeginning of the signal name. The node capacitance 126, pre-chargetransistor 128, select transistor 130, data transistor 136 and addresstransistors 138 and 140 form a memory cell.

In operation, node capacitance 126 is pre-charged through pre-chargetransistor 128 by providing a high level voltage pulse on pre-chargeline 132. In one embodiment, after the high level voltage pulse onpre-charge line 132, a data signal ˜DATA is provided on data line 142 toset the state of data transistor 136 and address signals ˜ADDRESS1 and˜ADDRESS2 are provided on address lines 144 and 146 to set the states offirst address transistor 138 and second address transistor 140. Avoltage pulse of sufficient magnitude is provided on select line 134 toturn on select transistor 130 and node capacitance 126 discharges ifdata transistor 136, first address transistor 138 and/or second addresstransistor 140 is on. Alternatively, node capacitance 126 remainscharged if data transistor 136, first address transistor 138 and secondaddress transistor 140 are all off.

Pre-charged firing cell 120 is an addressed firing cell if both addresssignals ˜ADDRESS1 and ˜ADDRESS2 are low and node capacitance 126 eitherdischarges if data signal ˜DATA is high or remains charged if datasignal ˜DATA is low. Pre-charged firing cell 120 is not an addressedfiring cell if at least one of the address signals ˜ADDRESS1 and˜ADDRESS2 is high and node capacitance 126 discharges regardless of thedata signal ˜DATA voltage level. The first and second addresstransistors 138 and 140 comprise an address decoder, and data transistor136 controls the voltage level on node capacitance 126 if pre-chargedfiring cell 120 is addressed.

Pre-charged firing cell 120 may utilize any number of other topologiesor arrangements, as long as the operational relationships describedabove are maintained. For example, an OR gate may be coupled to addresslines 144 and 146, the output of which is coupled to a singletransistor.

FIG. 7 is a schematic diagram illustrating one embodiment of an inkjetprinthead firing cell array 200. Firing cell array 200 includes aplurality of pre-charged firing cells 120 arranged into six-fire groups202 a-202 f. The pre-charged firing cells 120 in each fire group 202a-202 f are schematically arranged into 13 rows and eight columns. Thefire groups 202 a-202 f and pre-charged firing cells 120 in array 200are schematically arranged into 78 rows and eight columns, although thenumber of pre-charged firing cells and their layout may vary as desired.

The eight columns of pre-charged firing cells 120 are electricallycoupled to eight data lines 208 a-208 h that receive data signals ˜D1,˜D2 . . . ˜D8, respectively. Each of the eight columns, referred toherein as a data line group or data group, includes pre-charged firingcells 120 in each of the six fire groups 202 a-202 f. Each of the firingcells 120 in each column of pre-charged firing cells 120 is electricallycoupled to one of the data lines 208 a-208 h. All pre-charged firingcells 120 in a data line group are electrically coupled to the same dataline 208 a-208 h that is electrically coupled to the gates of the datatransistors 136 in the pre-charged firing cells 120 in the column.

Data line 208 a is electrically coupled to each of the pre-chargedfiring cells 120 in the far left column, including pre-charged firingcells in each of the fire groups 202 a-202 f. Data line 208 b iselectrically coupled to each of the pre-charged firing cells 120 in theadjacent column and so on, over to and including data line 208 h that iselectrically coupled to each of the pre-charged firing cells 120 in thefar right column, including pre-charged firing cells 120 in each of thefire groups 202 a-202 f.

The rows of pre-charged firing cells 120 are electrically coupled toaddress lines 206 a-206 g that receive address signals ˜A1, ˜A2 . . .˜A7, respectively. Each pre-charged firing cell 120 in a row ofpre-charged firing cells 120, referred to herein as a row subgroup orsubgroup of pre-charged firing cells 120, is electrically coupled to twoof the address lines 206 a-206 g. All pre-charged firing cells 120 in arow subgroup are electrically coupled to the same two address lines 206a-206 g.

The subgroups of the fire groups 202 a-202 f are identified as subgroupsSG1-1 through SG1-13 in fire group one (FG1) 202 a, subgroups SG2-1through SG2-13 in fire group two (FG2) 202 b and so on, up to andincluding subgroups SG6-1 through SG6-13 in fire group six (FG6) 202 f.In other embodiments, each fire group 202 a-202 f can include anysuitable number of subgroups, such as 14 or more subgroups.

Each subgroup of pre-charged firing cells 120 is electrically coupled totwo address lines 206 a-206 g. The two address lines 206 a-206 gcorresponding to a subgroup are electrically coupled to the first andsecond address transistors 138 and 140 in all pre-charged firing cells120 of the subgroup. One address line 206 a-206 g is electricallycoupled to the gate of one of the first and second address transistors138 and 140 and the other address line 206 a-206 g is electricallycoupled to the gate of the other one of the first and second addresstransistors 138 and 140. The address lines 206 a-206 g receive addresssignals ˜A1, ˜A2 . . . ˜A7 and are coupled to provide the addresssignals ˜A1, ˜A2 . . . ˜A7 to the subgroups of the array 200 as follows:

Row Subgroup Address Signals Row Subgroups ~A1, ~A2 SG1-1, SG2-1 . . .SG6-1 ~A1, ~A3 SG1-2, SG2-2 . . . SG6-2 ~A1, ~A4 SG1-3, SG2-3 . . .SG6-3 ~A1, ~A5 SG1-4, SG2-4 . . . SG6-4 ~A1, ~A6 SG1-5, SG2-5 . . .SG6-5 ~A1, ~A7 SG1-6, SG2-6 . . . SG6-6 ~A2, ~A3 SG1-7, SG2-7 . . .SG6-7 ~A2, ~A4 SG1-8, SG2-8 . . . SG6-8 ~A2, ~A5 SG1-9, SG2-9 . . .SG6-9 ~A2, ~A6 SG1-10, SG2-10 . . . SG6-10 ~A2, ~A7 SG1-11, SG2-11 . . .SG6-11 ~A3, ~A4 SG1-12, SG2-12 . . . SG6-12 ~A3, ~A5 SG1-13, SG2-13 . .. SG6-13

Subgroups of pre-charged firing cells 120 are addressed by providingaddress signals ˜A1, ˜A2 . . . ˜A7 on address lines 206 a-206 g. In oneembodiment, the address lines 206 a-206 g are electrically coupled toone or more address generators provided on printhead die 40.

Pre-charge lines 210 a-210 f receive pre-charge signals PRE1, PRE2 . . .PRE6 and provide the pre-charge signals PRE1, PRE2 . . . PRE6 tocorresponding fire groups 202 a-202 f. Pre-charge line 210 a iselectrically coupled to all of the pre-charged firing cells 120 in FG1202 a. Pre-charge line 210 b is electrically coupled to all pre-chargedfiring cells 120 in FG2 202 b and so on, up to and including pre-chargeline 210 f that is electrically coupled to all pre-charged firing cells120 in FG6 202 f. Each of the pre-charge lines 210 a-210 f iselectrically coupled to the gate and drain-source path of all of thepre-charge transistors 128 in the corresponding fire group 202 a-202 f,and all pre-charged firing cells 120 in a fire group 202 a-202 f areelectrically coupled to only one pre-charge line 210 a-210 f. Thus, thenode capacitances 126 of all pre-charged firing cells 120 in a firegroup 202 a-202 f are charged by providing the corresponding pre-chargesignal PRE1, PRE2 . . . PRE6 to the corresponding pre-charge line 210a-210 f.

Select lines 212 a-212 f receive select signals SEL1, SEL2 . . . SEL6and provide the select signals SEL1, SEL2 . . . SEL6 to correspondingfire groups 202 a-202 f. Select line 212 a is electrically coupled toall pre-charged firing cells 120 in FG1 202 a. Select line 212 b iselectrically coupled to all pre-charged firing cells 120 in FG2 202 band so on, up to and including select line 212 f that is electricallycoupled to all pre-charged firing cells 120 in FG6 202 f. Each of theselect lines 212 a-212 f is electrically coupled to the gate of all ofthe select transistors 130 in the corresponding fire group 202 a-202 f,and all pre-charged firing cells 120 in a fire group 202 a-202 f areelectrically coupled to only one select line 212 a-212 f.

Fire lines 214 a-214 f receive fire signals or energy signals FIRE1,FIRE2 . . . FIRE6 and provide the energy signals FIRE1, FIRE2 . . .FIRE6 to corresponding fire groups 202 a-202 f. Fire line 214 a iselectrically coupled to all pre-charged firing cells 120 in FG1 202 a.Fire line 214 b is electrically coupled to all pre-charged firing cells120 in FG2 202 b and so on, up to and including fire line 214 f that iselectrically coupled to all pre-charged firing cells 120 in FG6 202 f.Each of the fire lines 214 a-214 f is electrically coupled to all of thefiring resistors 52 in the corresponding fire group 202 a-202 f, and allpre-charged firing cells 120 in a fire group 202 a-202 f areelectrically coupled to only one fire line 214 a-214 f. The fire lines214 a-214 f are electrically coupled to external supply circuitry byappropriate interface pads. (See, FIGS. 25A and 25B). All pre-chargedfiring cells 120 in array 200 are electrically coupled to a referenceline 216 that is tied to a reference voltage, such as ground. Thus, thepre-charged firing cells 120 in a row subgroup of pre-charged firingcells 120 are electrically coupled to the same address lines 206 a-206g, pre-charge line 210 a-210 f, select line 212 a-212 f and fire line214 a-214 f.

In operation, in one embodiment fire groups 202 a-202 f are selected tofire in succession. FG1 202 a is selected before FG2 202 b, which isselected before FG3 and so on, up to FG6 202 f. After FG6 202 f, thefire group cycle starts over with FG1 202 a. However, other sequences,and non-sequential selections may be utilized.

The address signals ˜A1, ˜A2 . . . ˜A7 cycle through the 13 row subgroupaddresses before repeating a row subgroup address. The address signals˜A1, ˜A2 . . . ˜A7 provided on address lines 206 a-206 g are set to onerow subgroup address during each cycle through the fire groups 202 a-202f. The address signals ˜A1, ˜A2 . . . ˜A7 select one row subgroup ineach of the fire groups 202 a-202 f for one cycle through the firegroups 202 a-202 f. For the next cycle through fire groups 202 a-202 f,the address signals ˜A1, ˜A2 . . . ˜A7 are changed to select another rowsubgroup in each of the fire groups 202 a-202 f. This continues up tothe address signals ˜A1, ˜A2 . . . ˜A7 selecting the last row subgroupin fire groups 202 a-202 f. After the last row subgroup, address signals˜A1, ˜A2 . . . ˜A7 select the first row subgroup to begin the addresscycle over again.

In another aspect of operation, one of the fire groups 202 a-202 f isoperated by providing a pre-charge signal PRE1, PRE2 . . . PRE6 on thepre-charge line 210 a-210 f of the one fire group 202 a-202 f. Thepre-charge signal PRE1, PRE2 . . . PRE6 defines a pre-charge timeinterval or period during which time the node capacitance 126 on eachdrive switch 172 in the one fire group 202 a-202 f is charged to a highvoltage level, to pre-charge the one fire group 202 a-202 f.

Address signals ˜A1, ˜A2 . . . ˜A7 are provided on address lines 206a-206 g to address one row subgroup in each of the fire groups 202 a-202f, including one row subgroup in the pre-charged fire group 202 a-202 f.Data signals ˜D1, ˜D2 . . . ˜D8 are provided on data lines 208 a-208 hto provide data to all fire groups 202 a-202 f, including the addressedrow subgroup in the pre-charged fire group 202 a-202 f.

Next, a select signal SEL1, SEL2 . . . SEL6 is provided on the selectline 212 a-212 f of the pre-charged fire group 202 a-202 f to select thepre-charged fire group 202 a-202 f. The select signal SEL1, SEL2 . . .SEL6 defines a discharge time interval for discharging the nodecapacitance 126 on each drive switch 172 in a pre-charged firing cell120 that is either not in the addressed row subgroup in the selectedfire group 202 a-202 f or addressed in the selected fire group 202 a-202f and receiving a high level data signal ˜D1, ˜D2 . . . ˜D8. The nodecapacitance 126 does not discharge in pre-charged firing cells 120 thatare addressed in the selected fire group 202 a-202 f and receiving a lowlevel data signal ˜D1, ˜D2 . . . ˜D8. A high voltage level on the nodecapacitance 126 turns the drive switch 172 on (conducting).

After drive switches 172 in the selected fire group 202 a-202 f are setto conduct or not conduct, an energy pulse or voltage pulse is providedon the fire line 214 a-214 f of the selected fire group 202 a-202 f.Pre-charged firing cells 120 that have conducting drive switches 172,conduct current through the firing resistor 52 to heat ink and eject inkfrom the corresponding drop generator 60.

With fire groups 202 a-202 f operated in succession, the select signalSEL1, SEL2 . . . SEL6 for one fire group 202 a-202 f is used as thepre-charge signal PRE1, PRE2 . . . PRE6 for the next fire group 202a-202 f. The pre-charge signal PRE1, PRE2 . . . PRE6 for one fire group202 a-202 f precedes the select signal SEL1, SEL2 . . . SEL6 and energysignal FIRE1, FIRE2 . . . FIRE6 for the one fire group 202 a-202 f.After the pre-charge signal PRE1, PRE2 . . . PRE6, data signals ˜D1, ˜D2. . . ˜D8 are multiplexed in time and stored in the addressed rowsubgroup of the one fire group 202 a-202 f by the select signal SEL1,SEL2 . . . SEL6. The select signal SEL1, SEL2 . . . SEL6 for theselected fire group 202 a-202 f is also the pre-charge signal PRE1, PRE2. . . PRE6 for the next fire group 202 a-202 f. After the select signalSEL1, SEL2 . . . SEL6 for the selected fire group 202 a-202 f iscomplete, the select signal SEL1, SEL2 . . . SEL6 for the next firegroup 202 a-202 f is provided. Pre-charged firing cells 120 in theselected subgroup fire or heat ink based on the stored data signal ˜D1,˜D2 . . . ˜D8 as the energy signal FIRE1, FIRE2 . . . FIRE6, includingan energy pulse, is provided to the selected fire group 202 a-202 f.

FIG. 8 is a timing diagram illustrating the operation of one embodimentof firing cell array 200. Fire groups 202 a-202 f are selected insuccession to energize pre-charged firing cells 120 based on datasignals ˜D1, ˜D2 . . . ˜D8, indicated at 300. The data signals ˜D1, ˜D2. . . ˜D8 at 300 are changed depending on the nozzles that are to ejectfluid, indicated at 302, for each row subgroup address and fire group202 a-202 f combination. Address signals ˜A1, ˜A2 . . . ˜A7 at 304 areprovided on address lines 206 a-206 g to address one row subgroup fromeach of the fire groups 202 a-202 f. The address signals ˜A1, ˜A2 . . .˜A7 at 304 are set to one address, indicated at 306, for one cyclethrough fire groups 202 a-202 f. After the cycle is complete, theaddress signals ˜A1, ˜A2 . . . ˜A7 at 304 are changed at 308 to addressa different row subgroup from each of the fire groups 202 a-202 f. Theaddress signals ˜A1, ˜A2 . . . ˜A7 at 304 increment through the rowsubgroups to address the row subgroups in sequential order from one to13 and back to one. In other embodiments, address signals ˜A1, ˜A2 . . .˜A7 at 304 can be set to address row subgroups in any suitable order.

During a cycle through fire groups 202 a-202 f, select line 212 fcoupled to FG6 202 f and pre-charge line 210 a coupled to FG1 202 areceive SEL6/PRE1 signal 309, including SEL6/PRE1 signal pulse 310. Inone embodiment, the select line 212 f and pre-charge line 210 a areelectrically coupled together to receive the same signal. In anotherembodiment, the select line 212 f and pre-charge line 210 a are notelectrically coupled together, but receive similar signals.

The SEL6/PRE1 signal pulse at 310 on pre-charge line 210 a, pre-chargesall firing cells 120 in FG1 202 a. The node capacitance 126 for each ofthe pre-charged firing cells 120 in FG1 202 a is charged to a highvoltage level. The node capacitances 126 for pre-charged firing cells120 in one row subgroup SG1-K, indicated at 311, are pre-charged to ahigh voltage level at 312. The row subgroup address at 306 selectssubgroup SG1-K, and a data signal set at 314 is provided to datatransistors 136 in all pre-charged firing cells 120 of all fire groups202 a-202 f, including the address selected row subgroup SG1-K.

The select line 212 a for FG1 202 a and pre-charge line 210 b for FG2202 b receive the SEL1/PRE2 signal 315, including the SEL1/PRE2 signalpulse 316. The SEL1/PRE2 signal pulse 316 on select line 212 a turns onthe select transistor 130 in each of the pre-charged firing cells 120 inFG1 202 a. The node capacitance 126 is discharged in all pre-chargedfiring cells 120 in FG1 202 a that are not in the address selected rowsubgroup SG1-K. In the address selected row subgroup SG1-K, data at 314are stored, indicated at 318, in the node capacitances 126 of the driveswitches 172 in row subgroup SG1-K to either turn the drive switch on(conducting) or off (non-conducting).

The SEL1/PRE2 signal pulse at 316 on pre-charge line 210 b, pre-chargesall firing cells 120 in FG2 202 b. The node capacitance 126 for each ofthe pre-charged firing cells 120 in FG2 202 b is charged to a highvoltage level. The node capacitances 126 for pre-charged firing cells120 in one row subgroup SG2-K, indicated at 319, are pre-charged to ahigh voltage level at 320. The row subgroup address at 306 selectssubgroup SG2-K, and a data signal set at 328 is provided to datatransistors 136 in all pre-charged firing cells 120 of all fire groups202 a-202 f, including the address selected row subgroup SG2-K.

The fire line 214 a receives energy signal FIRE1, indicated at 323,including an energy pulse at 322 to energize firing resistors 52 inpre-charged firing cells 120 that have conductive drive switches 172 inFG1 202 a. The FIRE1 energy pulse 322 goes high while the SEL1/PRE2signal pulse 316 is high and while the node capacitance 126 onnon-conducting drive switches 172 are being actively pulled low,indicated on energy signal FIRE1 323 at 324. Switching the energy pulse322 high while the node capacitances 126 are actively pulled low,prevents the node capacitances 126 from being inadvertently chargedthrough the drive switch 172 as the energy pulse 322 goes high. TheSEL1/PRE2 signal 315 goes low and the energy pulse 322 is provided toFG1 202 a for a predetermined time to heat ink and eject the ink throughnozzles 34 corresponding to the conducting pre-charged firing cells 120.

The select line 212 b for FG2 202 b and pre-charge line 210 c for FG3202 c receive SEL2/PRE3 signal 325, including SEL2/PRE3 signal pulse326. After the SEL1/PRE2 signal pulse 316 goes low and while the energypulse 322 is high, the SEL2/PRE3 signal pulse 326 on select line 212 bturns on select transistor 130 in each of the pre-charged firing cells120 in FG2 202 b. The node capacitance 126 is discharged on allpre-charged firing cells 120 in FG2 202 b that are not in the addressselected row subgroup SG2-K. Data signal set 328 for subgroup SG2-K isstored in the pre-charged firing cells 120 of subgroup SG2-K, indicatedat 330, to either turn the drive switches 172 on (conducting) or off(non-conducting). The SEL2/PRE3 signal pulse on pre-charge line 210 cpre-charges all pre-charged firing cells 120 in FG3 202 c.

Fire line 214 b receives energy signal FIRE2, indicated at 331,including energy pulse 332, to energize firing resistors 52 inpre-charged firing cells 120 of FG2 202 b that have conducting driveswitches 172. The FIRE2 energy pulse 332 goes high while the SEL2/PRE3signal pulse 326 is high, indicated at 334. The SEL2/PRE3 signal pulse326 goes low and the FIRE2 energy pulse 332 remains high to heat andeject ink from the corresponding drop generator 60.

After the SEL2/PRE3 signal pulse 326 goes low and while the energy pulse332 is high, a SEL3/PRE4 signal is provided to select FG3 202 c andpre-charge FG4 202 d. The process of pre-charging, selecting andproviding an energy signal, including an energy pulse, continues up toand including FG6 202 f.

The SEL5/PRE6 signal pulse on pre-charge line 210 f, pre-charges allfiring cells 120 in FG6 202 f. The node capacitance 126 for each of thepre-charged firing cells 120 in FG6 202 f is charged to a high voltagelevel. The node capacitances 126 for pre-charged firing cells 120 in onerow subgroup SG6-K, indicated at 339, are pre-charged to a high voltagelevel at 341. The row subgroup address at 306 selects subgroup SG6-K,and data signal set 338 is provided to data transistors 136 in allpre-charged firing cells 120 of all fire groups 202 a-202 f, includingthe address selected row subgroup SG6-K.

The select line 212 f for FG6 202 f and pre-charge line 210 a for FG1202 a receive a second SEL6/PRE1 signal pulse at 336. The secondSEL6/PRE1 signal pulse 336 on select line 212 f turns on the selecttransistor 130 in each of the pre-charged firing cells 120 in FG6 202 f.The node capacitance 126 is discharged in all pre-charged firing cells120 in FG6 202 f that are not in the address selected row subgroupSG6-K. In the address selected row subgroup SG6-K, data 338 are storedat 340 in the node capacitances 126 of each drive switch 172 to eitherturn the drive switch on or off.

The SEL6/PRE1 signal on pre-charge line 210 a, pre-charges nodecapacitances 126 in all firing cells 120 in FG1 202 a, including firingcells 120 in row subgroup SG1-K, indicated at 342, to a high voltagelevel. The firing cells 120 in FG1 202 a are pre-charged while theaddress signals ˜A1, ˜A2 . . . ˜A7 304 select row subgroups SG1-K, SG2-Kand on, up to row subgroup SG6-K.

The fire line 214 f receives energy signal FIRE6, indicated at 343,including an energy pulse at 344 to energize fire resistors 52 inpre-charged firing cells 120 that have conductive drive switches 172 inFG6 202 f. The energy pulse 344 goes high while the SEL6/PRE1 signalpulse 336 is high and node capacitances 126 on non-conducting driveswitches 172 are being actively pulled low, indicated at 346. Switchingthe energy pulse 344 high while the node capacitances 126 are activelypulled low, prevents the node capacitances 126 from being inadvertentlycharged through drive switch 172 as the energy pulse 344 goes high. TheSEL6/PRE1 signal pulse 336 goes low and the energy pulse 344 ismaintained high for a predetermined time to heat ink and eject inkthrough nozzles 34 corresponding to the conducting pre-charged firingcells 120.

After the SEL6/PRE1 signal pulse 336 goes low and while the energy pulse344 is high, address signals ˜A1, ˜A2 . . . ˜A7 304 are changed at 308to select another set of subgroups SG1-K+1, SG2-K+1 and so on, up toSG6-K+1. The select line 212 a for FG1 202 a and pre-charge line 210 bfor FG2 202 b receive a SEL1/PRE2 signal pulse, indicated at 348. TheSEL1/PRE2 signal pulse 348 on select line 212 a turns on the selecttransistor 130 in each of the pre-charged firing cells 120 in FG1 202 a.The node capacitance 126 is discharged in all pre-charged firing cells120 in FG1 202 a that are not in the address selected subgroup SG1-K+1.Data signal set 350 for row subgroup SG1-K+1 is stored in thepre-charged firing cells 120 of subgroup SG1-K+1 to either turn driveswitches 172 on or off. The SEL1/PRE2 signal pulse 348 on pre-chargeline 210 b pre-charges all firing cells 120 in FG2 202 b.

The fire line 214 a receives energy pulse 352 to energize firingresistors 52 and pre-charged firing cells 120 of FG1 202 a that haveconducting drive switches 172. The energy pulse 352 goes high while theSEL1/PRE2 signal pulse at 348 is high. The SEL1/PRE2 signal pulse 348goes low and the energy pulse 352 remains high to heat and eject inkfrom corresponding drop generators 60. The process continues untilprinting is complete.

FIG. 9 is a diagram illustrating one embodiment of an address generator400 in printhead die 40. The address generator 400 includes a shiftregister 402, a direction circuit 404 and a logic array 406. The shiftregister 402 is electrically coupled to direction circuit 404 throughdirection control lines 408. Also, shift register 402 is electricallycoupled to logic array 406 through shift register output lines 410 a-410m.

In the embodiments described below, address generator 400 providesaddress signals to firing cells 120. In one embodiment, the addressgenerator 400 receives external signals, see FIGS. 25A and 25B,including a control signal CSYNC and six timing signals T1-T6, and inresponse provides seven address signals ˜A1, ˜A2, . . . ˜A7. The addresssignals ˜A1, ˜A2, . . . ˜A7 are active when they are in the low voltagelevel, as indicated by the preceding tilda on each signal name. In oneembodiment, timing signals T1-T6 are provided on select lines (e.g.,select lines 212 a-212 f shown in FIG. 7). Address generator 400 is oneembodiment of a control circuit configured to respond to a controlsignal (e.g., CSYNC) to initiate a sequence (e.g., a sequence ofaddresses ˜A1, ˜A2 . . . ˜A7 in forward or reverse order) to enable thefiring cells 120 for activation.

The address generator 400 includes resistor divide networks 412, 414 and416 that receive timing signals T2, T4 and T6. Resistor divide network412 receives timing signal T2 through timing signal line 418 and dividesdown the voltage level of timing signal T2 to provide a reduced voltagelevel T2 timing signal on first evaluation signal line 420. Resistordivide network 414 receives timing signal T4 though timing signal line422 and divides down the voltage level of timing signal T4 to provide areduced voltage level T4 timing signal on second evaluation signal line424. Resistor divide network 416 receives timing signal T6 throughtiming signal line 426 and divides down the voltage level of timingsignal T6 to provide a reduced voltage level T6 timing signal on thirdevaluation signal line 428.

The shift register 402 receives control signal CSYNC through controlsignal line 430 and direction signals through direction signal lines408. Also, shift register 402 receives timing signal T1 through timingsignal line 432 as first pre-charge signal PRE1. The reduced voltagelevel T2 timing signal is received through first evaluation signal line420 as first evaluation signal EVAL1. Timing signal T3 is receivedthrough timing signal line 434 as second pre-charge signal PRE2, and thereduced voltage level T4 timing signal is received through secondevaluation signal line 424 as second evaluation signal EVAL2. The shiftregister 402 provides shift register output signals SO1-SO13 on shiftregister output lines 410 a-410 m.

Shift register 402 includes thirteen shift register cells 403 a-403 mthat provide the thirteen shift register output signals SO1-SO13. Eachshift register cell 403 a-403 m provides one of the shift registeroutput signals SO1-SO13. The thirteen shift register cells 403 a-403 mare electrically coupled in series to provide shifting in the forwarddirection and the reverse direction. In other embodiments, shiftregister 402 can include any suitable number of shift register cells 403to provide any suitable number of shift register output signals, toprovide any number of desired address signals.

Shift register cell 403 a provides shift register output signal SO1 onshift register output line 410 a. Shift register cell 403 b providesshift register output signal SO2 on shift register output line 410 b.Shift register cell 403 c provides shift register output signal SO3 onshift register output line 410 c. Shift register cell 403 d providesshift register output signal SO4 on shift register output line 410 d.Shift register cell 403 e provides shift register output signal SO5 onshift register output line 410 e. Shift register cell 403 f providesshift register output signal SO6 on shift register output line 410 f.Shift register cell 403 g provides shift register output signal SO7 onshift register output line 410 g. Shift register cell 403 h providesshift register output signal SO8 on shift register output line 410 h.Shift register cell 403 i provides shift register output signal SO9 onshift register output line 410 i. Shift register cell 403 j providesshift register output signal SO10 on shift register output line 410 j.Shift register cell 403 k provides shift register output signal SO11 onshift register output line 410 k. Shift register cell 403 l providesshift register output signal SO12 on shift register output line 410 land shift register cell 403 m provides shift register output signal SO13on shift register output line 410 m.

The direction circuit 404 receives control signal CSYNC on controlsignal line 430. Timing signal T3 is received on timing signal line 434as fourth pre-charge signal PRE4. The reduced voltage level T4 timingsignal is received on evaluation signal line 424 as fourth evaluationsignal EVAL4. Timing signal T5 is received on timing signal line 436 asthird pre-charge signal PRE3, and the reduced voltage level T6 timingsignal is received on evaluation signal line 428 as third evaluationsignal EVAL3. The direction circuit 404 provides direction signals toshift register 402 through direction signal lines 408.

The logic array 406 includes address line pre-charge transistors 438a-438 g, address evaluation transistors 440 a-440 m, evaluationprevention transistors 442 a and 442 b, and logic evaluation pre-chargetransistor 444. Also, logic array 406 includes address transistor pairs446, 448, . . . 470 that decode shift register output signals SO1-SO13on shift register output lines 410 a-410 m to provide address signals˜A1, ˜A2, . . . ˜A7. The logic array 406 includes address onetransistors 446 a and 446 b, address two transistors 448 a and 448 b,address three transistors 450 a and 450 b, address four transistors 452a and 452 b, address five transistors 454 a and 454 b, address sixtransistors 456 a and 456 b, address seven transistors 458 a and 458 b,address eight transistors 460 a and 460 b, address nine transistors 462a and 462 b, address ten transistors 464 a and 464 b, address eleventransistors 466 a and 466 b, address twelve transistors 468 a and 468 band address thirteen transistors 470 a and 470 b.

The address line pre-charge transistors 438 a-438 g are electricallycoupled to T3 signal line 434 and address lines 472 a-472 g. The gateand one side of the drain-source path of address line pre-chargetransistor 438 a are electrically coupled to T3 signal line 434. Theother side of the drain-source path of address line pre-chargetransistor 438 a is electrically coupled to address line 472 a. The gateand one side of the drain-source path of address line pre-chargetransistor 438 b are electrically coupled to T3 signal line 434. Theother side of the drain-source path of address line pre-chargetransistor 438 b is electrically coupled to address line 472 b. The gateand one side of the drain-source path of address line pre-chargetransistor 438 c are electrically coupled to T3 signal line 434. Theother side of the drain-source path of address line pre-chargetransistor 438 c is electrically coupled to address line 472 c. The gateand one side of the drain-source path of address line pre-chargetransistor 438 d are electrically coupled to T3 signal line 434. Theother side of the drain-source path of address line pre-chargetransistor 438 d is electrically coupled to address line 472 d. The gateand one side of the drain-source path of address line pre-chargetransistor 438 e are electrically coupled to T3 signal line 434. Theother side of the drain-source path of address line pre-chargetransistor 438 e is electrically coupled to address line 472 e. The gateand one side of the drain-source path of address line pre-chargetransistor 438 f are electrically coupled to T3 signal line 434. Theother side of the drain-source path of address line pre-chargetransistor 438 f is electrically coupled to address line 472 f. The gateand one side of the drain-source path of address line pre-chargetransistor 438 g are electrically coupled to T3 signal line 434. Theother side of the drain-source path of address line pre-chargetransistor 438 g is electrically coupled to address line 472 g. In oneembodiment, address line pre-charge transistors 438 a-438 g areelectrically coupled to T4 signal line 422, instead of T3 signal line434. The T4 signal line 422 is electrically coupled to the gate and oneside of the drain-source path of each of the address line pre-chargetransistor 438 a-438 g.

The gate of each of the address evaluation transistors 440 a-440 m iselectrically coupled to logic evaluation signal line 474. One side ofthe drain-source path of each of the address evaluation transistors 440a-440 m is electrically coupled to ground. In addition, the drain-sourcepath of address evaluation transistor 440 a is electrically coupled toevaluation line 476 a. The drain-source path of address evaluationtransistor 440 b is electrically coupled to evaluation line 476 b. Thedrain-source path of address evaluation transistor 440 c is electricallycoupled to evaluation line 476 c. The drain-source path of addressevaluation transistor 440 d is electrically coupled to evaluation line476 d. The drain-source path of address evaluation transistor 440 e iselectrically coupled to evaluation line 476 e. The drain-source path ofaddress evaluation transistor 440 f is electrically coupled toevaluation line 476 f. The drain-source path of address evaluationtransistor 440 g is electrically coupled to evaluation line 476 g. Thedrain-source path of address evaluation transistor 440 h is electricallycoupled to evaluation line 476 h. The drain-source path of addressevaluation transistor 440 i is electrically coupled to evaluation line476 i. The drain-source path of address evaluation transistor 440 j iselectrically coupled to evaluation line 476 j. The drain-source path ofaddress evaluation transistor 440 k is electrically coupled toevaluation line 476 k. The drain-source path of address evaluationtransistor 440 l is electrically coupled to evaluation line 476 l. Thedrain-source path of address evaluation transistor 440 m is electricallycoupled to evaluation line 476 m.

The gate and one side of the drain-source path of logic evaluationpre-charge transistor 444 are electrically coupled to T5 signal line 436and the other side of the drain-source path is electrically coupled tologic evaluation signal line 474. The gate of evaluation preventiontransistor 442 a is electrically coupled to T3 signal line 434. Thedrain-source path of evaluation prevention transistor 442 a iselectrically coupled on one side to logic evaluation signal line 474 andon the other side to the reference at 478. The gate of evaluationprevention transistor 442 b is electrically coupled to T4 signal line422. The drain-source path of evaluation prevention transistor 442 b iselectrically coupled on one side to logic evaluation signal line 474 andon the other side to the reference at 478.

The drain-source paths of address transistor pairs 446, 448, . . . 470are electrically coupled between address lines 472 a-472 g andevaluation lines 476 a-476 m. The gates of address transistor pairs 446,448, . . . 470 are driven by shift register output signals SO1-SO13through shift register output signal lines 410 a-410 m.

The gates of address one transistors 446 a and 446 b are electricallycoupled to shift register output signal line 410 a. The drain-sourcepath of address one transistor 446 a is electrically coupled on one sideto address line 472 a and on the other side to evaluation line 476 a.The drain-source path of address one transistor 446 b is electricallycoupled one on side to address line 472 b and on the other side toevaluation line 476 a. A high level shift register output signal SO1 onshift register output signal line 410 a turns on address one transistors446 a and 446 b as address evaluation transistor 440 a is turned on by ahigh voltage level evaluation signal LEVAL on logic evaluation signalline 474. The address one transistor 446 a and address evaluationtransistor 440 a conduct to actively pull address line 472 a to a lowvoltage level. The address one transistor 446 b and address evaluationtransistor 440 a conduct to actively pull address line 472 b to a lowvoltage level.

The gates of address two transistors 448 a and 448 b are electricallycoupled to shift register output line 410 b. The drain-source path ofaddress two transistor 448 a is electrically coupled on one side toaddress line 472 a and on the other side to evaluation line 476 b. Thedrain-source path of address two transistor 448 b is electricallycoupled on one side to address line 472 c and on the other side toevaluation line 476 b. A high level shift register output signal SO2 onshift register output signal line 410 b turns on address two transistors448 a and 448 b as address evaluation transistor 440 b is turned on by ahigh voltage level evaluation signal LEVAL on logic evaluation signalline 474. The address two transistor 448 a and address evaluationtransistor 440 b conduct to actively pull address line 472 a to a lowvoltage level. The address two transistor 448 b and address evaluationtransistor 440 b conduct to actively pull address line 472 c to a lowvoltage level.

The gates of address three transistors 450 a and 450 b are electricallycoupled to shift register output signal line 410 c. The drain-sourcepath of address three transistor 450 a is electrically coupled on oneside to address line 472 a and on the other side to evaluation line 476c. The drain-source path of address three transistor 450 b iselectrically coupled on one side to address line 472 d and on the otherside to evaluation line 476 c. A high level shift register output signalSO3 on shift register output signal line 410 c turns on address threetransistors 450 a and 450 b as address evaluation transistor 440 c isturned on by a high voltage level evaluation signal LEVAL on logicevaluation signal line 474. The address three transistor 450 a andaddress evaluation transistor 440 c conduct to actively pull addressline 472 a to a low voltage level. The address three transistor 450 band address evaluation transistor 440 c conduct to actively pull addressline 472 d to a low voltage level.

The gates of address four transistors 452 a and 452 b are electricallycoupled to shift register output signal line 410 d. The drain-sourcepath of address four transistor 452 a is electrically coupled on oneside to address line 472 a and on the other side to evaluation line 476d. The drain-source path of address four transistor 452 b iselectrically coupled on one side to address line 472 e and on the otherside to evaluation line 476 d. A high level shift register output signalSO4 on shift register output signal line 410 d turns on address fourtransistors 452 a and 452 b as address evaluation transistor 440 d isturned on by a high voltage level evaluation signal LEVAL on logicevaluation signal line 474. The address four transistor 452 a andaddress evaluation transistor 440 d conduct to actively pull addressline 472 a to a low voltage level. The address four transistor 452 b andaddress evaluation transistor 440 d conduct to actively pull addressline 472 e to a low voltage level.

The gates of address five transistors 454 a and 454 b are electricallycoupled to shift register output signal line 410 e. The drain-sourcepath of address five transistor 454 a is electrically coupled on oneside to address line 472 a and on the other side to evaluation line 476e. The drain-source path of address five transistor 454 b iselectrically coupled on one side to address line 472 f and on the otherside to evaluation line 476 e. A high level shift register output signalSO5 on shift register output signal line 410 e turns on address fivetransistors 454 a and 454 b as address evaluation transistor 440 e isturned on by a high voltage level evaluation signal LEVAL. The addressfive transistor 454 a and address evaluation transistor 440 e conduct toactively pull address line 472 a to a low voltage level. The addressfive transistor 454 b and address evaluation transistor 440 e conduct toactively pull address line 472 f to a low voltage level.

The gates of address six transistors 456 a and 456 b are electricallycoupled to shift register output signal line 410 f. The drain-sourcepath of address six transistor 456 a is electrically coupled on one sideto address line 472 a and on the other side to evaluation line 476 f.The drain-source path of address six transistor 456 b is electricallycoupled on one side to address line 472 g and on the other side toevaluation line 476 f. A high level shift register output signal SO6 onshift register output signal line 410 f turns on address six transistors456 a and 456 b to conduct as address evaluation transistor 440 f isturned on by a high voltage level evaluation signal LEVAL. The addresssix transistor 456 a and address evaluation transistor 440 f conduct toactively pull address line 472 a to a low voltage level. The address sixtransistor 456 b and address evaluation transistor 440 f conduct toactively pull address line 472 g to a low voltage level.

The gates of address seven transistors 458 a and 458 b are electricallycoupled to shift register output signal line 410 g. The drain-sourcepath of address six transistor 458 a is electrically coupled on one sideto address line 472 b and on the other side to evaluation line 476 g.The drain source path of address seven transistor 458 b is electricallycoupled on one side to address line 472 c and on the other side toevaluation line 476 g. A high level shift register output signal SO7 onshift register output signal line 410 g turns on address seventransistors 458 a and 458 b as address evaluation transistor 440 g isturned on by a high voltage level evaluation signal LEVAL. The addressseven transistor 458 a and address evaluation transistor 440 g conductto actively pull address line 472 b to a low voltage level. The addressseven transistor 458 b and address evaluation transistor 440 g conductto actively pull address line 472 c to a low voltage level.

The gates of address eight transistors 460 a and 460 b are electricallycoupled to shift register output signal line 410 h. The drain-sourcepath of address eight transistor 460 a is electrically coupled on oneside to address line 472 b and on the other side to evaluation line 476h. The drain-source path of address eight transistor 460 b iselectrically coupled on one side to address line 472 d and on the otherside to evaluation line 476 h. A high level shift register output signalSO8 on shift register output signal line 410 h turns on address eighttransistors 460 a and 460 b as address evaluation transistor 440 h isturned on by a high voltage level evaluation signal LEVAL. The addresseight transistor 460 a and address evaluation transistor 440 h conductto actively pull address line 472 b to a low voltage level. The addresseight transistor 460 b and address evaluation transistor 440 h conductto actively pull address line 472 d to a low voltage level.

The gates of address nine transistors 462 a and 462 b are electricallycoupled to shift register output signal line 410 i. The drain-sourcepath of address nine transistor 462 a is electrically coupled on oneside to address line 472 b and on the other side to evaluation line 476i. The drain-source path of address nine transistor 462 b iselectrically coupled on one side to address line 472 e and on the otherside to evaluation line 476 i. A high level shift register output signalSO9 on shift register output signal line 410 i turns on address ninetransistors 462 a and 462 b to conduct as address evaluation transistor440 i is turned on by a high voltage level evaluation signal LEVAL. Theaddress nine transistor 462 a and address evaluation transistor 440 iconduct to actively pull address line 472 b to a low voltage level. Theaddress nine transistor 462 b and address evaluation transistor 440 iconduct to actively pull address line 472 e to a low voltage level.

The gates of address ten transistors 464 a and 464 b are electricallycoupled to shift register output signal line 410 j. The drain-sourcepath of address ten transistor 464 a is electrically coupled on one sideto address line 472 b and on the other side to evaluation line 476 j.The drain-source path of address ten transistor 464 b is electricallycoupled on one side to address line 472 f and on the other side toevaluation line 476 j. A high level shift register output signal SO10 onshift register output signal line 410 j turns on address ten transistors464 a and 464 b as address evaluation transistor 440 j is turned on by ahigh voltage level evaluation signal LEVAL. The address ten transistor464 a and address evaluation transistor 440 j conduct to actively pulladdress line 472 b to a low voltage level. The address ten transistor464 b and address evaluation transistor 440 j conduct to actively pulladdress line 472 f to a low voltage level.

The gates of address eleven transistors 466 a and 466 b are electricallycoupled to shift register output signal line 410 k. The drain-sourcepath of address eleven transistor 466 a is electrically coupled on oneside to address line 472 b and on the other side to evaluation line 476k. The drain-source path of address eleven transistor 466 b iselectrically coupled on one side to address line 472 g and on the otherside to evaluation line 476 k. A high level shift register output signalSO11 on shift register output signal line 410 k turns on address eleventransistors 466 a and 466 b as address evaluation transistor 440 k isturned on by a high voltage evaluation signal LEVAL. The address eleventransistor 466 a and address evaluation transistor 440 k conduct toactively pull address line 472 b to a low voltage level. The addresseleven transistor 466 b and address evaluation transistor 440 k conductto actively pull address line 472 g to a low voltage level.

The gates of address twelve transistors 468 a and 468 b are electricallycoupled to shift register output signal line 410 l. The drain-sourcepath of address twelve transistor 468 a is electrically coupled on oneside to address line 472 c and on the other side to evaluation line 476l. The drain-source path of address twelve transistor 468 b iselectrically coupled on one side to address line 472 d and on the otherside to evaluation line 476 l. A high level shift register output signalSO12 on shift register output signal line 410 l turns on address twelvetransistors 468 a and 468 b as address evaluation transistor 440 l isturned on by a high voltage level evaluation signal LEVAL. The addresstwelve transistor 468 a and address evaluation transistor 440 l conductto actively pull address line 472 c to a low voltage level. The addresstwelve transistor 468 b and address evaluation transistor 440 l conductto actively pull address line 472 d to a low voltage level.

The gates of address thirteen transistors 470 a and 470 b areelectrically coupled to shift register output signal line 410 m. Thedrain-source path of address thirteen transistor 470 a is electricallycoupled on one side to address line 472 c and on the other side toevaluation line 476 m. The drain-source path of address thirteentransistor 470 b is electrically coupled on one side to address line 472e and on the other side to evaluation line 476 m. A high level shiftregister output signal SO13 on shift register output signal line 410 mturns on address thirteen transistors 470 a and 470 b as addressevaluation transistor 440 m is turned on by a high voltage levelevaluation signal LEVAL. The address thirteen transistor 470 a andaddress evaluation transistor 440 m conduct to actively pull addressline 472 c to a low voltage level. The address thirteen transistor 470 band address evaluation transistor 440 m conduct to actively pull addressline 472 e to a low voltage level.

The shift register 402 shifts a single high voltage level output signalfrom one shift register output signal line 410 a-410 m to the next shiftregister output signal line 410 a-410 m. Shift register 402 receives acontrol pulse in control signal CSYNC on control line 430 and a seriesof timing pulses from timing signals T1-T4 to shift the received controlpulse into shift register 402. In response, shift register 402 providesa single high voltage level shift register output signal SO1 or SO13.All of the other shift register output signals SO1-SO13 are provided atlow voltage levels. Shift register 402 receives another series of timingpulses from timing signals T1-T4 and shifts the single high voltagelevel output signal from one shift register output signal SO1-SO13 tothe next shift register output signal SO1-SO13, with all other shiftregister output signals SO1-SO13 provided at low voltage levels. Shiftregister 402 receives a repeating series of timing pulses and inresponse to each series of timing pulses, shift register 402 shifts thesingle high voltage level output signal to provide a series of up tothirteen high voltage level shift register output signals SO1-SO13. Eachhigh voltage level shift register output signal SO1-SO13 turns on twoaddress transistor pairs 446, 448, . . . 470 to provide address signals˜A1, ˜A2, . . . ˜A7 to firing cells 120. The address signals ˜A1, ˜A2, .. . ˜A7 are provided in thirteen address time slots that correspond tothe thirteen shift register output signals SO1-SO13. In anotherembodiment, shift register 402 can include any suitable number of shiftregister output signals, such as fourteen, to provide address signals˜A1, ˜A2, . . . ˜A7 in any suitable number of address time slots, suchas fourteen address time slots.

The shift register 402 receives direction signals from direction circuit404 through direction signal lines 408. The direction signals set up thedirection of shifting in shift register 402. The shift register 402 canbe set to shift the high voltage level output signal in a forwarddirection, from shift register output signal SO1 to shift registeroutput signal SO13, or in a reverse direction, from shift registeroutput signal SO13 to shift register output signal SO1.

In the forward direction, shift register 402 receives the control pulsein control signal CSYNC and provides a high voltage level shift registeroutput signal SO1. All other shift register output signals SO2-SO13 areprovided at low voltage levels. Shift register 402 receives the nextseries of timing pulses and provides a high voltage level shift registeroutput signal SO2, with all other shift register output signals SO1 andSO3-SO13 provided at low voltage levels. Shift register 402 receives thenext series of timing pulses and provides a high voltage level shiftregister output signal SO3, with all other shift register output signalsSO1, SO2, and SO4-SO13 provided at low voltage levels. Shift register402 continues to shift the high level output signal in response to eachseries of timing pulses up to and including providing a high voltagelevel shift register output signal SO13, with all other shift registeroutput signals SO1-SO12 provided at low voltage levels. After providingthe high voltage level shift register output signal SO13, shift register402 receives the next series of timing pulses and provides low voltagelevel signals for all shift register output signals SO1-SO13. Anothercontrol pulse in control signal CSYNC is provided to start or initiateshift register 402 shifting in the forward direction series of highvoltage level output signals from shift register output signal SO1 toshift register output signal SO13.

In the reverse direction, shift register 402 receives a control pulse incontrol signal CSYNC and provides a high level shift register outputsignal SO13. All other shift register output signals SO1-SO12 areprovided at low voltage levels. Shift register 402 receives the nextseries of timing pulses and provides a high voltage level shift registeroutput signal SO12, with all other shift register output signalsSO1-SO11 and SO13 provided at low voltage levels. Shift register 402receives the next series of timing pulses and provides a high voltagelevel shift register output signal SO11, with all other shift registeroutput signals SO1-SO10, SO12 and SO13 provided at low voltage levels.Shift register 402 continues to shift the high voltage level outputsignal in response to each series of timing pulses, up to and includingproviding a high voltage level shift register output signal SO1, withall other shift register output signals SO2-SO13 provided at low voltagelevels. After providing the high voltage level shift register outputsignal SO1, shift register 402 receives the next series of timing pulsesand provides low voltage level signals for all shift register outputsignals SO1-SO13. Another control pulse in control signal CSYNC isprovided to start or initiate shift register 402 shifting in the reversedirection series of high voltage output signals from shift registeroutput signal SO13 to shift register output signal SO1.

The direction circuit 404 provides two direction signals throughdirection signal lines 408. The direction signals set theforward/reverse shifting direction in shift register 402. Also, thedirection signals can be used to clear the high voltage level outputsignal from shift register 402.

The direction circuit 404 receives a repeating series of timing pulsesfrom timing signals T3-T6. In addition, direction circuit 404 receivescontrol pulses in control signal CSYNC on control line 430. Thedirection circuit 404 provides forward direction signals in response toreceiving a control pulse coincident with a timing pulse from timingsignal T4. The forward direction signals set shift register 402 forshifting in the forward direction from shift register output signal SO1to shift register output signal SO13. The direction circuit 404 providesreverse direction signals in response to receiving a control pulsecoincident with a timing pulse from timing signal T6. The reversedirection signals set shift register 402 for shifting in the reversedirection, from shift register output signal SO13 to shift registeroutput signal SO1. Direction circuit 404 provides direction signals thatclear shift register 402 in response to direction circuit 404 receivingcontrol pulses coincident with both a timing pulse from timing signal T4and a timing pulse from timing signal T6.

The logic array 406 receives shift register output signals SO1-SO13 onshift register output signal lines 410 a-410 m and timing pulses fromtiming signals T3-T5 on timing signal lines 434, 422 and 436. Inresponse to a single high voltage level output signal in the shiftregister output signals SO1-SO13 and the timing pulses from timingsignals T3-T5, logic array 406 provides two low voltage level addresssignals out of the seven address signals ˜A1, ˜A2, . . . ˜A7.

The logic array 406 receives a timing pulse from timing signal T3 thatturns on evaluation prevention transistor 442 a to pull the evaluationsignal line 474 to a low voltage level and turn off address evaluationtransistors 440. Also, the timing pulse from timing signal T3 chargesaddress lines 472 a-472 g to high voltage levels through address linepre-charge transistors 438. In one embodiment, the timing pulse fromtiming signal T3 is replaced by the timing pulse from timing signal T4to charge address lines 472 a-472 g to high voltage levels throughaddress line pre-charge transistors 438.

The timing pulse from timing signal T4 turns on evaluation preventiontransistor 442 b to pull evaluation signal line 474 to a low voltagelevel and turn off address evaluation transistors 440. The shiftregister output signals SO1-SO13 settle to valid output signals duringthe timing pulse from timing signal T4. A single high voltage leveloutput signal in the shift register output signals SO1-SO13 is providedto the gates of an address transistor pair 446, 448, . . . 470 in logicarray 406. A timing pulse from timing signal T5 charges the evaluationsignal line 474 to a high voltage level to turn on address evaluationtransistors 440. As address evaluation transistors 440 are turned on, anaddress transistor pair 446, 448, . . . or 470 in logic array 406 thatreceive the high voltage level shift register output signal SO1-SO13conduct to discharge the corresponding address lines 472. Thecorresponding address lines 472 are actively pulled low throughconducting address transistor pairs 446, 448, . . . 470 and a conductingaddress evaluation transistor 440. The other address lines 472 remaincharged to a high voltage level.

The logic array 406 provides two low voltage level address signals outof the seven address signals ˜A1, ˜A2, . . . ˜A7 in each address timeslot. If shift register output signal SO1 is at a high voltage level,address one transistors 446 a and 446 b conduct to pull address lines472 a and 472 b to low voltage levels and provide active low addresssignals ˜A1 and ˜A2. If shift register output signal SO2 is at a highvoltage level, address two transistors 448 a and 448 b conduct to pulladdress lines 472 a and 472 c to low voltage levels and provide activelow address signals ˜A1 and ˜A3. If shift register output signal SO3 isat a high voltage level, address three transistors 450 a and 450 bconduct to pull address lines 472 a and 472 d to low voltage levels andprovide active low address signals ˜A1 and ˜A4, and so on for each shiftregister output signal SO4-SO13. The address signals ˜A1, ˜A2, . . . ˜A7for each of the thirteen address time slots, which correlate to theshift register output signals SO1-SO13, are set out in the followingtable:

Address Time Slot Active address signals 1 ~A1 and ~A2 2 ~A1 and ~A3 3~A1 and ~A4 4 ~A1 and ~A5 5 ~A1 and ~A6 6 ~A1 and ~A7 7 ~A2 and ~A3 8~A2 and ~A4 9 ~A2 and ~A5 10 ~A2 and ~A6 11 ~A2 and ~A7 12 ~A3 and ~A413 ~A3 and ~A5

In another embodiment, logic array 406 can provide active addresssignals ˜A1, ˜A2, . . . ˜A7 for each of thirteen address time slots asset out in the following table:

Address Time Slot Active address signals 1 ~A1 and ~A3 2 ~A1 and ~A4 3~A1 and ~A5 4 ~A1 and ~A6 5 ~A2 and ~A4 6 ~A2 and ~A5 7 ~A2 and ~A6 8~A2 and ~A7 9 ~A3 and ~A5 10 ~A3 and ~A6 11 ~A3 and ~A7 12 ~A4 and ~A613 ~A4 and ~A7

Also, in other embodiments, the logic array 406 can include addresstransistors that provide any suitable number of low voltage leveladdress signals ˜A1, ˜A2, . . . ˜A7 for each high voltage level outputsignal SO1-SO13 and in any suitable sequence of low voltage leveladdress signals ˜A1, ˜A2, . . . ˜A7. This can be done by, for example,appropriately locating each transistor pair 446, 448, . . . 470 todischarge any two desired address lines 672 a-g.

In addition, in other embodiments, logic array 406 can include anysuitable number of address lines to provide any suitable number ofaddress signals in any suitable number of address timeslots.

In operation, a repeating series of six timing pulses is provided fromtiming signals T1-T6. Each of the timing signals T1-T6 provides onetiming pulse in each series of six timing pulses. The timing pulse fromtiming signal T1 is followed by the timing pulse from timing signal T2,followed by the timing pulse from timing signal T3, followed by thetiming pulse from timing signal T4, followed by the timing pulse fromtiming signal T5, which is followed by the timing pulse from timingsignal T6. The series of six timing pulses is repeated in the repeatingseries of six timing pulses.

In one series of the six timing pulses, direction circuit 404 receives atiming pulse from timing signal T3 in fourth pre-charge signal PRE4. Thetiming pulse in fourth pre-charge signal PRE4 charges a first one of thedirection lines 408 to a high voltage level. The direction circuit 404receives a reduced voltage level timing pulse from timing signal T4 infourth evaluation signal EVAL4. If direction circuit 404 receives acontrol pulse in control signal CSYNC coincident with (at the same timeas) the fourth evaluation signal EVAL4, direction circuit 404 dischargesthe first direction line 408. If direction 404 receives a low voltagelevel control signal CSYNC coincident with the timing pulse in thefourth evaluation signal EVAL4, the first direction line 408 remainscharged to a high voltage level.

Next, direction circuit 404 receives a timing pulse from timing signalT5 in third pre-charge signal PRE3. The timing pulse in third pre-chargesignal PRE3 charges a second one of the direction lines 408. Thedirection circuit 404 receives a reduced voltage level timing pulse fromtiming signal T6 in third evaluation signal EVAL3. If the directioncircuit 404 receives a control pulse in control signal CSYNC coincidentwith a timing pulse in third evaluation signal EVAL3, direction circuit404 discharges the second direction line 408 to a low voltage level. Ifdirection circuit 404 receives a low voltage level control signal CSYNCcoincident with the timing pulse in third evaluation signal EVAL3, thesecond direction line 408 remains charged to a high voltage level.

If the first direction line 408 is discharged to a low voltage level andthe second direction line 408 remains at a high voltage level, thesignal levels on the first and second direction lines 408 set up shiftregister 402 to shift in the forward direction. If the first directionline 408 remains at a high voltage level and the second direction line408 is discharged to a low voltage level, the signal levels on directionlines 408 set up shift register 402 to shift in the reverse direction.If both the first and second direction lines 408 are discharged to lowvoltage levels, shift register 402 is prevented from providing a highvoltage level shift register output signal SO1-SO13. The directionsignals on direction lines 408 are set during each series of six timingpulses.

To begin, the direction is set in one series of six timing pulses andshift register 402 is initiated in the next series of six timing pulses.To initiate shift register 402, shift register 402 receives a timingpulse from timing signal T1 in first pre-charge signal PRE1. The timingpulse in first pre-charge signal PRE1 pre-charges an internal node ineach of the thirteen shift register cells, indicated at 403 a-403 m. Theshift register 402 receives a reduced voltage level timing pulse fromtiming signal T2 in first evaluation signal EVAL1. If a control pulse incontrol signal CSYNC is received by shift register 402 coincident withthe timing pulse in first evaluation signal EVAL1, shift register 402discharges the internal node of one of the thirteen shift register cellsto provide a low voltage level at the discharged internal node. If thecontrol signal CSYNC remains at a low voltage level coincident with thetiming pulse in first evaluation signal EVAL1, the internal node in eachof the thirteen shift register cells remains at a high voltage level.

Shift register 402 receives a timing pulse from timing signal T3 insecond pre-charge signal PRE2. The timing pulse in second pre-chargesignal PRE2 pre-charges each of the thirteen shift register output lines410 a-410 m to provide high voltage level shift register output signalsSO1-SO13. Shift register 402 receives a reduced voltage level timingpulse from timing signal T4 in second evaluation signal EVAL2. If theinternal node in a shift register cell 403 is at a low voltage level,such as after receiving the control pulse from control signal CSYNCcoincident with the timing pulse in first evaluation signal EVAL1, shiftregister 402 maintains the shift register output signal SO1-SO13 at thehigh voltage level. If the internal node in a shift register cell 403 isat a high voltage level, such as in all other shift register cells 403,shift register 402 discharges the shift register output line 410 a-410 mto provide low voltage level shift register output signals SO1-SO13. Theshift register 402 is initiated in one series of the six timing pulses.The shift register output signals SO1-SO13 become valid during thetiming pulse from timing signal T4 in second evaluation signal EVAL2 andremain valid until the timing pulse from timing signal T3 in the nextseries of six timing pulses. In each subsequent series of the six timingpulses, shift register 402 shifts the high voltage level shift registeroutput signal SO1-SO13 from one shift register cell 403 to the nextshift register cell 403.

The logic array 406 receives the shift register output signals SO1-SO13.In one embodiment, logic array 406 receives the timing pulse from timingsignal T3 to pre-charge address lines 472 and turn off addressevaluation transistors 440. In one embodiment, logic array 406 receivesthe timing pulse from timing signal T3 to turn off address evaluationtransistors 440 and a timing pulse from timing signal T4 to pre-chargeaddress lines 472.

Logic array 406 receives the timing pulse from timing signal T4 to turnoff address evaluation transistors 440 as shift register output signalsSO1-SO13 settle to valid shift register output signals SO1-SO13. Ifshift register 402 is initiated, one shift register output signalSO1-SO13 remains at a high voltage level after the timing pulse fromtiming signal T4. Logic array 406 receives the timing pulse from timingsignal T5 to charge evaluation signal line 474 and turn on addressevaluation transistor 440. The address transistor pair 446, 448, . . .470 that receives the high voltage level shift register output signalSO1-SO13 are turned on to pull two of the seven address lines 472 a-472g to low voltage levels. The two low voltage level address signals inaddress signals ˜A1, ˜A2, . . . ˜A7 are used to enable firing cells 120and firing cell subgroups for activation. The address signals ˜A1, ˜A2,. . . ˜A7 become valid during the timing pulse from timing signal T5 andremain valid until the timing pulse from timing signal T3 in the nextseries of six timing pulses.

If shift register 402 is not initiated, all shift register output lines410 are discharged to provide low voltage level shift register outputsignals SO1-SO13. The low voltage level shift register output signalsSO1-SO13 turns off address transistor pairs 446, 448, . . . 470 andaddress lines 472 remain charged to provide high voltage level addresssignals ˜A1, ˜A2, . . . ˜A7. The high voltage level address signals ˜A1,˜A2, . . . ˜A7 prevent firing cells 120 and firing cell subgroups frombeing enabled for activation.

While FIG. 9 describes one embodiment of an address circuit, otherembodiments employing different logic elements and components may beutilized. For example, a controller that receives the above describedinput signals, e.g. signal T1-T6 and that provides address signals ˜A1,˜A2, . . . ˜A7 may be utilized.

FIG. 10A is a diagram illustrating one shift register cell 403 a inshift register 402. Shift register 402 includes thirteen shift registercells 403 a-403 m that provide the thirteen shift register outputsignals SO1-SO13. Each shift register cell 403 a-403 m provides one ofthe shift register output signals SO1-SO13 and each shift register cell403 a-403 m is similar to shift register cell 403 a. The thirteen shiftregister cells 403 are electrically coupled in series to provideshifting in the forward and reverse directions. In other embodiments,shift register 402 can include any suitable number of shift registercells 403 to provide any suitable number of shift register outputsignals.

The shift register cell 403 a includes a first stage that is an inputstage, indicated with dashed lines at 500, and a second stage that is anoutput stage, indicated with dashed lines at 502. The first stage 500includes a first pre-charge transistor 504, a first evaluationtransistor 506, a forward input transistor 508, a reverse inputtransistor 510, a forward direction transistor 512 and a reversedirection transistor 514. The second stage 502 includes a secondpre-charge transistor 516, a second evaluation transistor 518 and aninternal node transistor 520.

In the first stage 500, the gate and one side of the drain-source pathof first pre-charge transistor 504 is electrically coupled to timingsignal line 432. The timing signal line 432 provides timing signal T1 toshift register 402 as first pre-charge signal PRE1. The other side ofthe drain-source path of first pre-charge transistor 504 is electricallycoupled to one side of the drain-source path of first evaluationtransistor 506 and the gate of internal node transistor 520 throughinternal node 522. The internal node 522 provides shift registerinternal node signal SN1 between stages 500 and 502 to the gate ofinternal node transistor 520.

The gate of first evaluation transistor 506 is electrically coupled tofirst evaluation signal line 420. The first evaluation signal line 420provides the reduced voltage level T2 timing signal to shift register402 as first evaluation signal EVAL1. The other side of the drain-sourcepath of first evaluation transistor 506 is electrically coupled to oneside of the drain-source path of forward input transistor 508 and oneside of the drain-source path of reverse input transistor 510 throughinternal path 524.

The other side of the drain-source path of forward input transistor 508is electrically coupled to one side of the drain-source path of forwarddirection transistor 512 at 526, and the other side of the drain-sourcepath of reverse input transistor 510 is electrically coupled to one sideof the drain-source path of reverse direction transistor 514 at 528. Thedrain-source paths of forward direction transistor 512 and reversedirection transistor 514 are electrically coupled to a reference, suchas ground, at 530.

The gate of the forward direction transistor 512 is electrically coupledto direction line 408 a that receives the forward direction signal DIRFfrom direction circuit 404. The gate of the reverse direction transistor514 is electrically coupled to direction line 408 b that receives thereverse direction signal DIRR from direction circuit 404.

In the second stage 502, the gate and one side of the drain-source pathof second pre-charge transistor 516 are electrically coupled to timingsignal line 434. The timing signal line 434 provides timing signal T3 toshift register 402 as second pre-charge signal PRE2. The other side ofthe drain-source path of second pre-charge transistor 516 iselectrically coupled to one side of the drain-source path of secondevaluation transistor 518 and to shift register output line 410 a. Theother side of the drain-source path of second evaluation transistor 518is electrically coupled to one side of the drain-source path of internalnode transistor 520 at 532. The gate of second evaluation transistor 518is electrically coupled to second evaluation signal line 424 to providethe reduced voltage level T4 timing signal to shift register 402 assecond evaluation signal EVAL2. The gate of internal node transistor 520is electrically coupled to internal node 522 and the other side of thedrain-source path of internal node transistor 520 is electricallycoupled to a reference, such as ground, at 534. The gate of the internalnode transistor 520 includes a capacitance at 536 for storing the shiftregister cell internal node signal SN1. The shift register output signalline 410 a includes a capacitance at 538 for storing the shift registeroutput signal SO1.

Each shift register cell 403 a-403 m in the series of thirteen shiftregister cells 403 is similar to shift register cell 403 a. The gate ofthe forward direction transistor 508 in each shift register cell 403a-403 m is electrically coupled to the control line 430 or one of theshift register output lines 410 a-410 l to shift in the forwarddirection. The gate of the reverse direction transistor 510 in eachshift register cell 403 a-403 m is electrically coupled to the controlline 430 or one of the shift register output lines 410 b-410 m to shiftin the reverse direction. The shift register output signal lines 410 areelectrically coupled to one forward transistor 508 and one reversetransistor 510, except for shift register output signal lines 410 a and410 m. Shift register output signal line 410 a is electrically coupledto a forward direction transistor 508 in shift register cell 403 b, butnot a reverse direction transistor 510. Shift register output signalline 410 m is electrically coupled to a reverse direction transistor 510in shift register cell 403 l, but not a forward direction transistor508.

The shift register cell 403 a is the first shift register 403 in theseries of thirteen shift registers 403 as shift register 402 shifts inthe forward direction. The gate of forward input transistor 508 in shiftregister cell 403 a is electrically coupled to control signal line 430to receive control signal CSYNC. The second shift register cell 403 bincludes the gate of the forward input transistor electrically coupledto shift register output line 410 a to receive shift register outputsignal SO1. The third shift register cell 403 c includes the gate of theforward input transistor electrically coupled to shift register outputline 410 b to receive shift register output signal SO2. The fourth shiftregister cell 403 d includes the gate of the forward input transistorelectrically coupled to shift register output line 410 c to receiveshift register output signal SO3. The fifth shift register cell 403 eincludes the gate of the forward input transistor electrically coupledto shift register output line 410 d to receive shift register outputsignal SO4. The sixth shift register cell 403 f includes the gate of theforward input transistor electrically coupled to shift register outputline 410 e to receive shift register output signal SO5. The seventhshift register cell 403 g includes the gate of the forward inputtransistor electrically coupled to shift register output line 410 f toreceive shift register output signal SO6. The eighth shift register cell403 h includes the gate of the forward input transistor electricallycoupled to shift register output line 410 g to receive shift registeroutput signal SO7. The ninth shift register cell 403 i includes the gateof the forward input transistor electrically coupled to shift registeroutput line 410 h to receive shift register output signal SO8. The tenthshift register cell 403 j includes the gate of the forward inputtransistor electrically coupled to shift register output line 410 i toreceive shift register output signal SO9. The eleventh shift registercell 403 k includes the gate of the forward input transistorelectrically coupled to shift register output line 410 j to receiveshift register output signal SO10. The twelfth shift register cell 403 lincludes the gate of the forward input transistor electrically coupledto shift register output line 410 k to receive shift register outputsignal SO11. The thirteenth shift register cell 403 m includes the gateof the forward input transistor electrically coupled to shift registeroutput line 410 l to receive shift register output signal SO12.

The shift register cell 403 a is the last shift register cell 403 in theseries of thirteen shift register cells 403 as shift register 402 shiftsin the reverse direction. The gate of reverse input transistor 510 inshift register cell 403 a is electrically coupled to the preceding shiftregister output line 410 b to receive shift register output signal SO2.The shift register cell 403 b includes the gate of the reverse inputtransistor electrically coupled to shift register output line 410 c toreceive shift register output signal SO3. The shift register cell 403 cincludes the gate of the reverse input transistor electrically coupledto shift register output line 410 d to receive shift register outputsignal SO4. The shift register cell 403 d includes the gate of thereverse input transistor electrically coupled to shift register outputline 410 e to receive shift register output signal SO5. The shiftregister cell 403 e includes the gate of the reverse input transistorelectrically coupled to shift register output line 410 f to receiveshift register output signal SO6. The shift register cell 403 f includesthe gate of the reverse input transistor electrically coupled to shiftregister output line 410 g to receive shift register output signal SO7.The shift register cell 403 g includes the gate of the reverse inputtransistor electrically coupled to shift register output line 410 h toreceive shift register output signal SO8. The shift register cell 403 hincludes the gate of the reverse input transistor electrically coupledto shift register output line 410 i to receive shift register outputsignal SO9. The shift register cell 403 i includes the gate of thereverse input transistor electrically coupled to shift register outputline 410 j to receive shift register output signal SO10. The shiftregister cell 403 j includes the gate of the reverse input transistorelectrically coupled to shift register output line 410 k to receiveshift register output signal SO11. The shift register cell 403 kincludes the gate of the reverse input transistor electrically coupledto shift register output line 410 l to receive shift register outputsignal SO12. The shift register cell 403 l includes the gate of thereverse input transistor electrically coupled to shift register outputline 410 m to receive shift register output signal SO13. The shiftregister cell 403 m includes the gate of the reverse input transistorelectrically coupled to control signal line 430 to receive controlsignal CSYNC. Shift register output lines 410 a-410 m are alsoelectrically coupled to logic array 406.

Shift register 402 receives a control pulse in control signal CSYNC andprovides a single high voltage level output signal. As described aboveand described in detail below, the shifting direction of shift register402 is set in response to direction signals DIRF and DIRR, which aregenerated during timing pulses in timing signals T3-T6 based on thecontrol signal CSYNC on control signal line 430. If shift register 402is shifting in the forward direction, shift register 402 sets shiftregister output line 410 a and shift register output signal SO1 to ahigh voltage level in response to the control pulse and timing pulses ontiming signals T1-T4. If shift register 402 is shifting in the reversedirection, shift register 402 sets shift register output line 410 m andshift register output signal SO13 to a high voltage level in response tothe control pulse and timing pulses in timing signal T1-T4. The highvoltage level output signal SO1 or SO13 is shifted through shiftregister 402 from one shift register cell 403 to the next shift registercell 403 in response to timing pulses in timing signals T1-T4.

The shift register 402 shifts in the control pulse and shifts the singlehigh level output signal from one shift register cell 403 to the nextshift register cell 403 using two pre-charge operations and two evaluateoperations. The first stage 500 of each shift register cell 403 receivesforward direction signal DIRF and reverse direction signal DIRR. Also,the first stage 500 of each shift register 403 receives a forward shiftregister input signal SIF and a reverse shift register input signal SIR.All shift register cells 403 in shift register 402 are set to shift inthe same direction and at the same time as timing pulses are received intiming signals T1-T4.

The first stage 500 of each shift register cell 403 shifts in either theforward shift register input signal SIF or the reverse shift registerinput signal SIR. The high or low voltage level of the selected shiftregister input signal SIF or SIR is provided as the shift registeroutput signal SO1-SO13. The first stage 500 of each shift register cell403 pre-charges internal node 522 during a timing pulse from timingsignal T1 and evaluates the selected shift register input signal SIF orSIR during a timing pulse from timing signal T2. The second stage 502 ineach shift register cell 403 pre-charges shift register output lines 410a-410 m during a timing pulse from timing signal T3 and evaluates theinternal node signal SN (e.g., SN1) during a timing pulse from timingsignal T4.

The direction signals DIRF and DIRR set the forward/reverse direction ofshifting in shift register cell 403 a and all other shift register cells403 in shift register 402. Shift register 402 shifts in the forwarddirection if forward direction signal DIRF is at a high voltage leveland reverse direction signal DIRR is at a low voltage level. Shiftregister 402 shifts in the reverse direction if reverse direction signalDIRR is at a high voltage level and forward direction signal DIRF is ata low voltage level. If both direction signals DIRF and DIRR are at lowvoltage levels, shift register 402 does not shift in either directionand all shift register output signals SO1-SO13 are cleared to inactivelow voltage levels.

In operation of shifting shift register cell 403 a in the forwarddirection, forward direction signal DIRF is set to a high voltage leveland reverse direction signal DIRR is set to a low voltage level. Thehigh voltage level forward direction signal DIRF turns on forwarddirection transistor 512 and the low voltage level reverse directionsignal DIRR turns off reverse direction transistor 514. A timing pulsefrom timing signal T1 is provided to shift register 402 in firstpre-charge signal PRE1 to charge internal node 522 to a high voltagelevel through first pre-charge transistor 504. Next, a timing pulse fromtiming signal T2 is provided to resistor divide network 412 and areduced voltage level T2 timing pulse is provided to shift register 402in first evaluation signal EVAL1. The timing pulse in first evaluationsignal EVAL1 turns on first evaluation transistor 506. If the forwardshift register input signal SIF is at a high voltage level, forwardinput transistor 508 is turned on and with forward direction transistor512 already turned on, internal node 522 is discharged to provide a lowvoltage level internal node signal SN1. The internal node 522 isdischarged through first evaluation transistor 506, forward inputtransistor 508 and forward direction transistor 512. If the forwardshift register input signal SIF is at a low voltage level, forward inputtransistor 508 is turned off and internal node 522 remains charged toprovide a high voltage level internal node signal SN1. Reverse shiftregister input signal SIR controls reverse input transistor 510.However, reverse direction transistor 514 is turned off such thatinternal node 522 cannot be discharged through reverse input transistor510.

The internal node signal SN1 on internal node 522 controls internal nodetransistor 520. A low voltage level internal node signal SN1 turns offinternal node transistor 520 and a high voltage level internal nodesignal SN1 turns on internal node transistor 520.

A timing pulse from timing signal T3 is provided to shift register 402as second pre-charge signal PRE2. The timing pulse in second pre-chargesignal PRE2 charges shift register output line 410 a to a high voltagelevel through second pre-charge transistor 516. Next, a timing pulsefrom timing signal T4 is provided to a resistor divide network 414 and areduced voltage level T4 timing pulse is provided to shift register 402as second evaluation signal EVAL2. The timing pulse in second evaluationsignal EVAL2 turns on second evaluation transistor 518. If internal nodetransistor 520 is off, shift register output line 410 a remains chargedto a high voltage level. If internal node transistor 520 is on, shiftregister output line 410 a is discharged to a low voltage level. Theshift register output signal SO1 is the high/low inverse of the internalnode signal SN1, which was the high/low inverse of the forward shiftregister input signal SIF. The level of the forward shift register inputsignal SIF was shifted to the shift register output signal SO1.

In shift register cell 403 a, the forward shift register input signalSIF is control signal CSYNC on control line 430. To discharge internalnode 522 to a low voltage level, a control pulse in control signal CSYNCis provided at the same time as a timing pulse in first evaluationsignal EVAL1. The control pulse in control signal CSYNC that iscoincident with the timing pulse from timing signal T2 initiates shiftregister 402 for shifting in the forward direction.

In operation of shifting shift register cell 403 a in the reversedirection, forward direction signal DIRF is set to a low voltage leveland reverse direction signal DIRR is set to a high voltage level. Thelow voltage level forward direction signal DIRF turns off forwarddirection transistor 512 and the high voltage level reverse directionsignal DIRR turns on reverse direction transistor 514. A timing pulsefrom timing signal T1 is provided in first pre-charge signal PRE1 tocharge internal node 522 to a high voltage level through firstpre-charge transistor 504. Next, a timing pulse from timing signal T2 isprovided to resistor divide network 412 and a reduced voltage level T2timing pulse is provided in first evaluation signal EVAL1. The timingpulse in first evaluation signal EVAL1 turns on first evaluationtransistor 506. If the reverse shift register input signal SIR is at ahigh voltage level, reverse input transistor 510 is turned on, and withreverse direction transistor 514 already turned on, internal node 522 isdischarged to provide a low voltage level internal node signal SN1. Theinternal node 522 is discharged through first evaluation transistor 506,reverse input transistor 510 and reverse direction transistor 514. Ifthe reverse shift register input signal SIR is at a low voltage level,reverse input transistor 510 is turned off and internal node 522 remainscharged to provide a high voltage level internal node signal SN1.Forward shift register input signal SIF controls forward inputtransistor 508. However, forward direction transistor 512 is turned offsuch that internal node 522 cannot be discharged through forward inputtransistor 508.

A timing pulse from timing signal T3 is provided in second pre-chargesignal PRE2. The timing pulse in second pre-charge signal PRE2 chargesshift register output line 410 a to a high voltage level through secondpre-charge resistor 516. Next a timing pulse from timing signal T4 isprovided to resistor divide network 414 and a reduced voltage level T4timing pulse is provided in second evaluation signal EVAL2. The timingpulse in second evaluation signal EVAL2 turns on second evaluationtransistor 518. If internal node transistor 520 is off, shift registeroutput line 410 a remains charged to a high voltage level. If internalnode transistor 520 is on, shift register output line 410 a isdischarged to a low voltage level. The shift register output signal SO1is the high/low inverse of the internal node signal SN1, which was thehigh/low inverse of the reverse shift register input signal SIR. Thelevel of the reverse shift register input signal SIR was shifted to theshift register output signal SO1.

In shift register cell 403 a, the reverse shift register input signalSIR is shift register output signal SO2 on shift register output line410 b. In shift register cell 403 m, the reverse shift register inputsignal SIR is control signal CSYNC on control line 430. To dischargeinternal node 522 in shift register cell 403 m to a low voltage level, acontrol pulse in control signal CSYNC is provided at the same time as atiming pulse in the first evaluation signal EVAL1. The control pulse incontrol signal CSYNC that is coincident with the timing pulse fromtiming signal T2 initiates shift register 402 for shifting in thereverse direction from shift register cell 403 m toward shift registercell 403 a.

In operation of clearing shift register cell 403 a and all shiftregister cells 403 in shift register 402, direction signals DIRF andDIRR are set to low voltage levels. A low voltage forward directionsignal DIRF turns off forward direction transistor 512 and a low voltagelevel reverse direction signal DIRR turns off reverse directiontransistor 514. A timing pulse from timing signal T1 is provided infirst pre-charge signal PRE1 to charge internal node 522 and provide ahigh voltage level internal node signal SN1. A timing pulse from timingsignal T2 is provided as a reduced voltage level T2 timing pulse infirst evaluation signal EVAL1 to turn on first evaluation transistor506. Both forward direction transistor 512 and reverse directiontransistor 514 are turned off such that internal node 522 is notdischarged through either forward input transistor 508 or reverse inputtransistor 510.

The high voltage level internal node signal SN1 turns on internal nodetransistor 520. A timing pulse from timing signal T3 is provided insecond pre-charge signal PRE2 to charge shift register output signalline 410 a and all shift register output signal lines 410. Next, atiming pulse from timing signal T4 is provided as a reduced voltagelevel T4 timing pulse in second evaluation signal EVAL2 to turn onsecond evaluation transistor 518. The shift register output line 410 ais discharged through second evaluation transistor 518 and internal nodetransistor 520 to provide a low voltage level shift register outputsignal SO1. Also, all other shift register output lines 410 aredischarged to provide inactive low voltage level shift register outputsignals SO2-SO13.

FIG. 10B is a diagram illustrating direction circuit 404. The directioncircuit 404 includes a forward direction signal circuit 550 and areverse direction signal circuit 552. The forward direction signalcircuit 550 includes a third pre-charge transistor 554, a thirdevaluation transistor 556 and a first control transistor 558. Thereverse direction signal circuit 552 includes a fourth pre-chargetransistor 560, a fourth evaluation transistor 562 and a second controltransistor 564.

The gate and one side of the drain-source path of third pre-chargetransistor 554 are electrically coupled to timing signal line 436. Thetiming signal line 436 provides timing signal T5 to direction circuit404 as third pre-charge signal PRE3. The other side of the drain-sourcepath of third pre-charge transistor 554 is electrically coupled to oneside of the drain-source path of third evaluation transistor 556 throughdirection signal line 408 a. The direction signal line 408 a providesthe forward direction signal DIRF to the gate of the forward directiontransistor in each shift register cell 403 in shift register 402, suchas the gate of forward direction transistor 512 in shift register cell403 a. The gate of third evaluation transistor 556 is electricallycoupled to the third evaluation signal line 428 that provides thereduced voltage level T6 timing signal to direction circuit 404. Theother side of the drain-source path of third evaluation transistor 556is electrically coupled to the drain-source path of control transistor558 at 566. The drain-source path of control transistor 558 is alsoelectrically coupled to a reference, such as ground, at 568. The gate ofcontrol transistor 558 is electrically coupled to control line 430 toreceive control signal CSYNC.

The gate and one side of the drain-source path of fourth pre-chargetransistor 560 are electrically coupled to timing signal line 434. Thetiming signal line 434 provides timing signal T3 to direction circuit404 as fourth pre-charge signal PRE4. The other side of the drain-sourcepath of fourth pre-charge transistor 560 is electrically coupled to oneside of the drain-source path of fourth evaluation transistor 562through direction signal line 408 b. The direction signal line 408 bprovides the reverse direction signal DIRR to the gate of the reversedirection transistor in each shift register cell 403 in shift register402, such as the gate of reverse direction transistor 514 in shiftregister cell 403 a. The gate of fourth evaluation transistor 562 iselectrically coupled to the fourth evaluation signal line 424 thatprovides the reduced voltage level T4 timing signal to direction circuit404. The other side of the drain-source path of fourth evaluationtransistor 562 is electrically coupled to the drain-source path ofcontrol transistor 564 at 570. The drain-source path of controltransistor 564 is also electrically coupled to a reference, such asground, at 572. The gate of control transistor 564 is electricallycoupled to control line 430 to receive control signal CSYNC.

The direction signals DIRF and DIRR set the direction of shifting inshift register 402. If forward direction signal DIRF is set to a highvoltage level and reverse direction signal DIRR is set to a low voltagelevel, forward direction transistors, such as forward directiontransistor 512, are turned on and reverse direction transistors, such asreverse direction transistor 514, are turned off. Shift register 402shifts in the forward direction. If forward direction signal DIRF is setto a low voltage level and reverse direction signal DIRR is set to ahigh voltage level, forward direction transistors, such as forwarddirection transistor 512, are turned off and reverse directiontransistors, such as reverse direction transistor 514 are turned on.Shift register 402 shifts in the reverse direction. The directionsignals DIRF and DIRR are set during each series of timing pulses fromtiming signal T3-T6 as shift register 402 actively shifts in either theforward or reverse direction. To terminate shifting or prevent shiftingof shift register 402, direction signals DIRF and DIRR are set to lowvoltage levels. This clears the single high voltage level signal fromthe shift register output signals SO1-SO13, such that all shift registeroutput signals SO1-SO13 are at low voltage levels. The low voltage levelshift register output signals SO1-SO13 turn off all address transistorpairs 446, 448, . . . 470 and address signals ˜A1, ˜A2, . . . ˜A7 remainat high voltage levels that do not enable firing cells 120.

In operation, timing signal line 434 provides a timing pulse from timingsignal T3 to direction circuit 404 in fourth pre-charge signal PRE4. Thetiming pulse in fourth pre-charge signal PRE4 charges the reversedirection signal line 408 b to a high voltage level. A timing pulse fromtiming signal T4 is provided to the resistor divide network 414 thatprovides a reduced voltage level T4 timing pulse to direction circuit404 in fourth evaluation signal EVAL4. The timing pulse in fourthevaluation signal EVAL4 turns on fourth evaluation transistor 562. If acontrol pulse from control signal CSYNC is provided to the gate ofcontrol transistor 564 at the same time as the timing pulse in fourthevaluation signal EVAL4 is provided to fourth evaluation transistor 562,the reverse direction signal line 408 b discharges to a low voltagelevel. If the control signal CSYNC remains at a low voltage level as thetiming pulse in the fourth evaluation signal EVAL4 is provided to fourthevaluation transistor 562, the reverse direction signal line 408 bremains charged to a high voltage level.

Timing signal line 436 provides a timing pulse from timing signal T5 todirection circuit 404 in third pre-charge signal PRE3. The timing pulsein third pre-charge signal PRE3 charges the forward direction signalline 408 a to a high voltage level. A timing pulse from timing signal T6is provided to resistor divide network 416 that provides a reducedvoltage level T6 timing pulse to direction circuit 404 in thirdevaluation circuit EVAL3. The timing pulse in third evaluation signalEVAL3 turns on third evaluation transistor 556. If a control pulse fromcontrol signal CSYNC is provided to the gate of control transistor 558at the same time as the timing pulse in third evaluation signal EVAL3 isprovided to third evaluation transistor 556, the forward directionsignal line 408 a discharges to a low voltage level. If the controlsignal CSYNC remains at a low voltage level as the timing pulse in thethird evaluation signal EVAL3 is provided to third evaluation transistor556, the forward direction signal line 408 a remains charged to a highvoltage level.

FIG. 11 is a timing diagram illustrating operation of address generator400 in the forward direction. The timing signals T1-T6 provide a seriesof six repeating pulses. Each of the timing signals T1-T6 provides onepulse in the series of six pulses.

In one series of six pulses, timing signal T1 at 600 includes timingpulse 602, timing signal T2 at 604 includes timing pulse 606, timingsignal T3 at 608 includes timing pulse 610, timing signal T4 at 612includes timing pulse 614, timing signal T5 at 616 includes timing pulse618 and timing signal T6 at 620 includes timing pulse 622. The controlsignal CSYNC at 624 includes control pulses that set the direction ofshifting in shift register 402 and initiate shift register 402 forgenerating address signals ˜A1, ˜A2, . . . ˜A7, indicated at 625.

The timing pulse 602 of timing signal T1 at 600 is provided to shiftregister 402 in first pre-charge signal PRE1. During timing pulse 602,internal node 522, in each of the shift register cells 403 a-403 m,charges to provide high voltage level internal node signals SN1-SN13.All shift register internal node signals SN, indicated at 626, are setto high voltage levels at 628. The high voltage level internal nodesignals SN 626 turn on the internal node transistor 520 in each of theshift register cells 403 a-403 m. In this example, the series of sixtiming pulses has been provided prior to timing pulse 602 and shiftregister 402 has not been initiated, such that all shift register outputsignals SO, indicated at 630, are discharged to low voltage levels,indicated at 632 and all address signals ˜A1, ˜A2, . . . ˜A7 at 625remain at high voltage levels, indicated at 633.

The timing pulse 606 of timing signal T2 at 604 is provided to shiftregister 402 in first evaluation signal EVAL1. Timing pulse 606 turns onthe first evaluation transistor 506 in each of the shift register cells403 a-403 m. While control signal CSYNC 624 remains at a low voltagelevel at 634 and all shift register output signals SO 630 remain at lowvoltage levels at 636, forward input transistor 508 and reverse inputtransistor 510 in each of the shift register cells 403 a-403 m are off.The non-conducting forward input transistors 508 and non-conductingreverse input transistors 510 prevent the internal node 522 in each ofthe shift register cells 403 a-403 m from discharging to a low voltagelevel. All shift register internal node signals SN 626 remain at highvoltage levels at 638.

The timing pulse 610 of timing signal T3 at 608 is provided to shiftregister 402 in second pre-charge signal PRE2, to direction circuit 404in fourth pre-charge signal PRE4 and to address line pre-chargetransistors 438 and evaluation prevention transistor 442 a in logicarray 406. During timing pulse 610 in second pre-charge signal PRE2, allshift register output signals SO 630 charge to high voltage levels at640. Also, during timing pulse 610 in fourth pre-charge signal PRE4,reverse direction signal DIRR 642 charges to a high voltage level at644. In addition, timing pulse 610 charges all address signals 625 tohigh voltage levels at 646 and turns on evaluation prevention transistor442 a to pull logic evaluation signal LEVAL 648 to a low voltage levelat 650.

Timing pulse 614 of timing signal T4 at 612 is provided to shiftregister 402 in second evaluation signal EVAL2, to direction circuit 404in fourth evaluation signal EVAL4 and to evaluation preventiontransistor 442 b in logic array 406. The timing pulse 614 in secondevaluation signal EVAL2 turns on second evaluation transistor 518 ineach of the shift register cells 403 a-403 m. With the internal nodesignals SN 626 at high voltage levels having turned on internal nodetransistor 520 in each of the shift register cells 403 a-403 m, allshift register output signals SO 630 discharge to low voltage levels at652. Also, timing pulse 614 in fourth evaluation signal EVAL4 turns onfourth evaluation transistor 562. A control pulse at 654 of controlsignal CSYNC 624 turns on control transistor 564. With fourth evaluationtransistor 562 and control transistor 564 turned on, direction signalDIRR 642 is discharged to a low voltage level at 656. In addition,timing pulse 614 turns on evaluation prevention transistor 442 b to holdlogic evaluation signal LEVAL 648 at a low voltage level at 658. The lowvoltage level logic evaluation signal LEVAL 648 turns off addressevaluation transistors 440.

Timing pulse 618 of timing signal T5 at 616 is provided to directioncircuit 404 in third pre-charge signal PRE3 and to logic evaluationpre-charge transistor 444 in logic array 406. During timing pulse 618 inthird pre-charge signal PRE3, forward direction signal DIRF 658 chargesto a high voltage level at 660. The high voltage level forward directionsignal DIRF 658 turns on forward direction transistor 512 in each of theshift register cells 403 a-403 m to set up shift register 402 forshifting in the forward direction. Also, during timing pulse 618, logicevaluation signal LEVAL 648 charges to a high voltage level at 662,which turns on all logic evaluation transistors 440. With all shiftregister output signals SO 630 at low voltage levels, all addresstransistor pairs 446, 448, . . . 470 are turned off and all addresssignals ˜A1, ˜A2, . . . ˜A7 at 625 remain at high voltage levels.

Timing pulse 622 from timing signal T6 at 620 is provided to directioncircuit 404 as third evaluation signal EVAL3. The timing pulse 622 turnson third evaluation transistor 556. Since control signal CSYNC 624remains at a low voltage level at 664, control transistor 558 turns offand forward direction signal DIRF 658 remains at a high voltage level.The high voltage level forward direction signal DIRF 658 and low voltagelevel reverse direction signal DIRR 642 set up each of the shiftregister cells 403 a-403 m for shifting in the forward direction.

In the next series of six timing pulses, timing pulse 666 charges allinternal node signals SN 626 to high voltage levels. Timing pulse 668turns on the first evaluation transistor 506 in each of the shiftregister cells 403 a-403 m. Control signal CSYNC 624 provides a controlpulse at 670 to forward input transistor 508 in shift register cell 403a. With forward direction transistor 512 already turned on, internalnode signal SN1 in shift register cell 403 a discharges to a low voltagelevel, indicated at 672. The shift register output signals SO 630 are atlow voltage levels at 674, which turns off the forward input transistorin shift register cells 403 b-403 m. With the forward input transistorsoff, each of the other internal node signals SN2-SN13 in shift registercells 403 b-403 m remain at high voltage levels, indicated at 676.

During timing pulse 678, all shift register output signals SO 630 arecharged to high voltage levels at 680 and reverse direction signal DIRR642 is charged to a high voltage level at 682. In addition, duringtiming pulse 678 all address signals ˜A1, ˜A2, . . . ˜A7 625 are chargedto high voltage levels at 684 and logic evaluation signal LEVAL 648 isdischarged to a low voltage level at 686. The low voltage level logicevaluation signal LEVAL 648 turns off address evaluation transistors440, which prevents address transistor pairs 446, 448, 470 from pullingaddress signals ˜A1, ˜A2, . . . ˜A7 625 to low voltage levels.

During timing pulse 688, shift register output signals SO2-SO13discharge to low voltage levels at 690. Shift register output signal SO1remains at a high voltage level, indicated at 692, due to internal nodesignal SN1 at 672 turning off internal node transistor 520 of shiftregister cell 403 a. Also, timing pulse 688 turns on second evaluationtransistor 562 and control pulse 694 turns on control transistor 564 todischarge reverse direction signal DIRR 642 to a low voltage level at696. In addition, timing pulse 688 turns on evaluation preventiontransistor 442 b to pull logic evaluation signal LEVAL 648 to a low,voltage level at 698 and keep evaluation transistors 440 turned off.

During timing pulse 700 forward direction signal DIRF 658 is maintainedat a high voltage level and logic evaluation signal LEVAL 648 to ischarged to a high voltage level at 702. The high voltage level logicevaluation signal LEVAL 648 at 702 turns on evaluation transistors 440.The high level shift register output signal SO1 at 692 turns on addresstransistor pairs 446 a and 446 b and address signals ˜A1 and ˜A2 at 625are actively pulled to low voltage levels at 704. The other shiftregister output signals SO2-SO13 are pulled to low voltage levels at690, such that address transistors 448, 450, . . . 470 are turned offand address signals ˜A3-˜A7 remain at high voltage levels, indicated at706. The address signals ˜A1, ˜A2, . . . ˜A7 at 625 become valid duringtiming pulse 700 in timing signal T5 at 616. Timing pulse 708 turns onthird evaluation transistor 556. However, control signal CSYNC 624 is ata low voltage level at 710 and forward direction signal DIRF 658 remainsat a high voltage level at 712.

In the next series of six timing pulses, timing pulse 714 charges allinternal node signals SN 626 to high voltage levels at 716. Timing pulse718 turns on first evaluation transistor 506 in each of the shiftregister cells 403 a-403 m to allow discharge of node 522, if theforward input signal SIF at each of the shift register cells 403 a-403 mis in a high voltage level. The forward input signal SIF at shiftregister cell 403 a is the control signal CSYNC 624, which is at a lowvoltage level at 720. The forward input signal SIF at each of the othershift register cells 403 b-403 m is the shift register output signal SO630 of the preceding shift register cell 403. The shift register outputsignal SO1 is in a high voltage level at 692 and is the forward inputsignal SIF of second shift register cell 403 b. The shift registeroutput signals SO2-SO13 are all at low voltage levels at 690.

Shift register cells 403 a and 403 c-403 m receive low voltage levelforward input signals SIF that turn off forward input transistor 508 ineach of the shift register cells 403 a and 403 c-403 m, such thatinternal node signals SN1 and SN3-SN13 remain high at 722. Shiftregister cell 403 b receives the high voltage level shift registeroutput signal SO1 as a forward input signal SIF that turns on theforward input transistor to discharge internal node signal SN2 at 724.

During timing pulse 726 all shift register output signals SO 630 arecharged to high voltage levels at 728 and reverse direction signal DIRR642 to a high voltage level at 730. Also, timing pulse 726 charges alladdress signals ˜A1, ˜A2 . . . ˜A7 625 toward a high voltage level at732 and turns on evaluation prevention transistor 442 a to pull LEVAL648 to a low voltage level at 734.

The address signals ˜A1, ˜A2, . . . ˜A7 625 were valid from the timeaddress signals ˜A1 and ˜A2 were pulled low at 704, until all addresssignals ˜A1, ˜A2, . . . ˜A7 625 are pulled high at 732. The addresssignals ˜A1, ˜A2, . . . ˜A7 625 are valid during the timing pulse 708from timing signal T6 at 620 of the preceding series of six timingpulses and the timing pulses 714 and 718 from timing signals T1 at 600and T2 at 604 of the present series of six timing pulses.

Timing pulse 736 turns on second evaluation transistor 518 in each ofthe shift register cells 403 a-403 m to evaluate internal node signalsSN 626. Internal node signals SN1 and SN3-SN13 are at high voltagelevels at 722 and discharge shift register output signals SO1 andSO3-SO13 to low voltage levels at 738. Internal node signal SN2 is at alow voltage level at 724 that turns off the internal node transistor ofshift register cell 403 b and maintains shift register output signal SO2at a high voltage level at 740.

When fourth evaluation transistor 562 is turned on, by timing pulse 736,and control pulse 742 in CSYNC 624 turns on control transistor 564,reverse direction signal DIRR 642 discharges to a low voltage level at744. The direction signals DIRR 642 and DIRF 658 are set during eachseries of six timing pulses. In addition, timing pulse 736 turns onevaluation prevention transistor 442 b to maintain LEVAL 648 at a lowvoltage level at 746.

During timing pulse 748 forward direction signal DIRF 658 is maintainedat a high voltage level at 750 and LEVAL 648 charges to a high voltagelevel at 752. The high voltage level logic evaluation signal LEVAL 678at 752 turns on evaluation transistors 440. The high voltage level shiftregister output signal SO2 at 740 turns on address transistors 448 a and448 b to pull address signals ˜A1 and ˜A3 to low voltage levels at 754.The other address signals ˜A2 and ˜A4-˜A7 are maintained at high voltagelevels at 756.

Timing pulse 758 turns on third evaluation transistor 556. Controlsignal CSYNC 624 remains at a low voltage level at 760 to turn offcontrol transistor 558 and maintain forward direction signal DIRF 642 ata high voltage level.

The next series of six timing pulses shifts the high voltage level shiftregister output signal SO2 to the next shift register cell 403 c thatprovides a high voltage level shift register output signal SO3. Shiftingcontinues with each series of six timing pulses until each shiftregister output signal SO1-SO13 has been high once. After shift registeroutput signal SO13 has been high, the series of high voltage level shiftregister output signals SO 630 stops. The shift register 402 can beinitiated again by providing a control pulse in control signal CSYNC,such as control pulse 670, coincident with a timing pulse from timingsignal T2 at 604.

In forward direction operation, a control pulse in control signal CSYNC624 is provided coincident with a timing pulse from timing signal T4 at612 to set the direction of shifting to the forward direction. Also, acontrol pulse from control signal CSYNC 624 is provided coincident witha timing pulse from timing signal T2 at 604 to start or initiate theshift register 402 shifting a high voltage signal through the shiftregister output signals SO1-SO13.

FIG. 12 is a timing diagram illustrating operation of address generator400 in the reverse direction. The timing signals T1-T6 provide therepeating series of six pulses. Each of the timing signals T1-T6provides one pulse in a series of six pulses. In one series of sixpulses, timing signal T1 at 800 includes timing pulse 802, timing signalT2 at 804 includes timing pulse 806, timing signal T3 at 808 includestiming pulse 810, timing signal T4 at 812 includes timing pulse 814,timing signal T5 at 816 includes timing pulse 818 and timing signal T6at 820 includes timing pulse 822. The control signal CSYNC at 824includes control pulses that set the direction of shifting in shiftregister 402 and initiate shift register 402 for generating addresssignals ˜A1, ˜A2, . . . ˜A7, indicated at 825.

The timing pulse 802 is provided to shift register 402 in firstpre-charge signal PRE1. During timing pulse 802, internal node 522 ineach of the shift register cells 403 a-403 m charges to providecorresponding high voltage level internal node signals SN1-SN13. Shiftregister internal node signals SN 826 are set to high voltage levels at828. The high voltage level internal node signals SN 826 turn on theinternal node transistors 520 in shift register cells 403. In thisexample, a series of six timing pulses has been provided prior to timingpulse 802 and without initiating shift register 402, such that all shiftregister output signals SO 830 are discharged to low voltage levels,indicated at 832 and all address signals ˜A1, ˜A2, . . . ˜A7 at 825remain at high voltage levels, indicated at 833.

The timing pulse 806 is provided to shift register 402 in firstevaluation signal EVAL1. Timing pulse 806 turns on the first evaluationtransistor 506 in each of the shift register cells 403 a-403 m. Thecontrol signal CSYNC 824 remains at a low voltage level at 834 and allshift register output signals SO 830 remain at low voltage levels at 836to turn off the forward input transistor 508 and reverse inputtransistor 510 in each of the shift register cells 403 a-403 m. Thenon-conducting forward and reverse input transistors 508 and 510 preventthe internal node 522 in each of the shift register cells 403 a-403 mfrom discharging to a low voltage level. All shift register internalnode signals SN 826 remain at high voltage levels at 838.

The timing pulse 810 is provided to shift register 402 in secondpre-charge signal PRE2, to direction circuit 404 in fourth pre-chargesignal PRE4 and to address line pre-charge transistors 438 andevaluation prevention transistor 442 a in logic array 406. During timingpulse 810, all shift register output signals SO 830 are charged to highvoltage levels at 840. Also, during timing pulse 810, reverse directionsignal DIRR 842 charges to a high voltage level at 844. In addition,timing pulse 810 maintains all address signals 825 at high voltagelevels and turns on evaluation prevention transistor 442 a to pull logicevaluation signal LEVAL 848 to a low voltage level at 850.

Timing pulse 814 is provided to shift register 402 in second evaluationsignal EVAL2, to direction circuit 404 in fourth evaluation signal EVAL4and to evaluation prevention transistor 442 b in logic array 406. Timingpulse 814 turns on the second evaluation transistor 518 in each of theshift register cells 403 a-403 m. With internal node signals SN 826 athigh voltage levels that turn on internal node transistor 520 in each ofthe shift register cells 403 a-403 m, all shift register output signalsSO 830 discharge to low voltage levels at 852. Also, timing pulse 814turns on fourth evaluation transistor 562 and control signal CSYNC 824provides a low voltage to turn off control transistor 564. With controltransistor 564 turned off, reverse direction signal DIRR 842 remainscharged to a high voltage level. In addition, timing pulse 814 turns onevaluation prevention transistor 442 b to hold logic evaluation signalLEVAL 848 at a low voltage level at 858. The low voltage level logicevaluation signal LEVAL 848 turns off address evaluation transistors440.

Timing pulse 818 is provided to direction circuit 404 in thirdpre-charge signal PRE3 and to logic evaluation pre-charge transistor 444in logic array 406. During timing pulse 818, forward direction signalDIRF 858 charges to a high voltage level at 860. Also, during timingpulse 818 logic evaluation signal LEVAL 848 charges to a high voltagelevel at 862 to turn on all logic evaluation transistors 440. With allshift register output signals SO 830 at low voltage levels, all addresstransistor pairs 446, 448, . . . 470 are turned off and all addresssignals ˜A1, ˜A2, . . . ˜A7 at 825 remain at high voltage levels.

Timing pulse 822 is provided to direction circuit 404 as thirdevaluation signal EVAL3. The timing pulse 822 turns on third evaluationtransistor 556. The control signal CSYNC 824 provides a control pulse864 to turn on control transistor 558 and forward direction signal DIRF858 is discharged to a low voltage level at 865. The low voltage levelforward direction signal DIRF 858 and high voltage level reversedirection signal DIRR 842 set each of the shift register cells 403 a-403m for shifting in the reverse direction.

In the next series of six timing pulses, during timing pulse 866, allinternal node signals SN 826 are charged to high voltage levels. Timingpulse 868 turns on the first evaluation transistor 506 in each of theshift register cells 403 a-403 m. A control pulse 870, which may be incontrol signal CSYNC, is provided to turn on the reverse inputtransistor in shift register cell 403 m and with the reverse directiontransistor turned on, internal node signal SN13 discharges to a lowvoltage level, indicated at 872. The shift register output signals SO830 are at low voltage levels at 874, which turns off the reverse inputtransistor in shift register cells 403 a-403 l. With the reverse inputtransistors off, each of the other internal node signals SN1-SN12 remainat high voltage levels, indicated at 876.

During timing pulse 878, all shift register output signals SO 830 arecharged to high voltage levels at 880 and reverse direction signal DIRR842 is maintained at a high voltage level at 882. In addition, timingpulse 878 maintains all address signals ˜A1, ˜A2, . . . ˜A7 825 at highvoltage levels at 884 and pulls logic evaluation signal LEVAL 848 to alow voltage level at 886. The low voltage level logic evaluation signalLEVAL 848 turns off evaluation transistors 440, which prevents addresstransistor pairs 446, 448, . . . 470 from pulling address signals ˜A1,˜A2, . . . ˜A7 825 to low voltage levels.

During timing pulse 888, shift register output signals SO1-SO12 aredischarged to low voltage levels at 890. Shift register output signalSO13 remains at a high voltage level, indicated at 892, based on the lowvoltage level internal node signal SN13 at 872 that turns off internalnode transistor 520 of shift register cell 403 m. Also, timing pulse 888turns on second evaluation transistor and control signal CSYNC 824 turnsoff control transistor 564 to maintain reverse direction signal DIRR 842at a high voltage level at 896. In addition, timing pulse 888 turns onevaluation prevention transistor 442 b to hold logic evaluation signalLEVAL 848 at a low voltage level at 898 and keep evaluation transistors440 turned off. Shift register output signals SO 830 settle duringtiming pulse 888, such that one shift register output signal SO13 is ata high voltage level and all other shift register output signalsSO1-SO12 are at low voltage levels.

During timing pulse 900, forward direction signal DIRF 858 charges to ahigh voltage level at 901 and logic evaluation signal LEVAL 848 chargesto a high voltage level at 902. The high voltage level logic evaluationsignal LEVAL 848 at 902 turns on evaluation transistors 440. The highvoltage level shift register output signal SO13 at 892 turns on addresstransistors 470 a and 470 b and address signals ˜A3 and ˜A5 are activelypulled to low voltage levels, indicated at 904. The other shift registeroutput signals SO1-SO12 are pulled to low voltage levels at 890, suchthat address transistor pairs 446, 448, . . . 468 are turned off andaddress signals ˜A1, ˜A2, ˜A4, ˜A6 and ˜A7 remain at high voltagelevels, indicated at 906. The address signals ˜A1, ˜A2, . . . ˜A7 825become valid during timing pulse 900. Timing pulse 908 turns on thirdevaluation transistor 556 and a control pulse 910 in control signalCSYNC 824 turns on control transistor 558 to discharge the forwarddirection signal DIRF 858 to a low voltage at 912.

In the next series of six timing pulses, during timing pulse 914 allinternal node signals SN 826 are charged to high voltage levels at 916.Timing pulse 918 turns on first evaluation transistor 506 in each of theshift register cells 403 a-403 m to discharge node 522 if the reverseinput signal SIR at each of the shift register cells 403 a-403 m is at ahigh voltage level. The reverse input signal SIR at shift register cell403 m is the control signal CSYNC 824, which is at a low voltage levelat 920. The reverse input signal SIR at each of the other shift registercells 403 a-403 l is the shift register output signal SO 830 of thefollowing shift register cell 403. The shift register output signal SO13is at a high voltage level at 892 and is the reverse input signal SIR ofshift register cell 403 l. The shift register output signals SO1-SO12are all at low voltage levels at 890. Shift register cells 403 a-403 kand 403 m have low voltage level reverse input signals SIR that turn offreverse input transistor 510, such that internal node signals SN1-SN11and SN13 remain at high voltage levels at 922. Shift register cell 403 lreceives the high voltage level shift register output signal SO13 as thereverse input signal SIR that turns on the reverse input transistor todischarge internal node signal SN12 at 924.

During timing pulse 926, all shift register output signals SO 830 arecharged to high voltage levels at 928 and reverse direction signal DIRR842 is maintained at a high voltage level at 930. Also, during timingpulse 926 all address signals ˜A1, ˜A2, . . . ˜A7 825 are charged to ahigh voltage level at 932 and evaluation prevention transistor 442 a isturned on to pull LEVAL 848 to a low voltage level at 934. The addresssignals ˜A1, ˜A2, . . . ˜A7 825 were valid from the time address signals˜A3 and ˜A5 were pulled low at 904 until all address signals ˜A1, ˜A2, .. . ˜A7 825 are pulled high at 932. The address signals ˜A1, ˜A2, . . .˜A7 825 are valid during the timing pulses 908, 914 and 918.

Timing pulse 936 turns on second evaluation transistor 518 in each ofthe shift register cells 403 a-403 m to evaluate the internal nodesignals SN 826. Internal node signals SN1-SN11 and SN13 are at highvoltage levels at 922 to discharge shift register output signalsSO1-SO11 and SO13 to low voltage levels at 938. Internal node signalSN12 is at a low voltage level at 924 that turns off the internal nodetransistor of shift register cell 403 l and maintains shift registeroutput signal SO12 at a high voltage level at 940.

Also, timing pulse 936 turns on fourth evaluation transistor 562 andcontrol signal CSYNC 824 is at a low voltage level to turn off controltransistor 564 to maintain reverse direction signal DIRR 842 at a highvoltage level at 944. In addition, timing pulse 936 turns on evaluationprevention transistor 442 b to maintain LEVAL 848 at a low voltage levelat 946.

During timing pulse 948, forward direction signal DIRF 858 is charged toa high voltage level at 950 and LEVAL 848 is charged to a high voltagelevel at 952. The high voltage level logic evaluation signal LEVAL 848at 952 turns on evaluation transistors 440. The high voltage level shiftregister output signal SO12 at 940 turns on address transistors 468 aand 468 b to pull address signals ˜A3 and ˜A4 to low voltage levels at954. The other address signals ˜A1, ˜A2 and ˜A5-˜A7 are maintained athigh voltage levels at 956.

Timing pulse 958 turns on third evaluation transistor 556. A controlpulse 960 in control signal CSYNC 824 turns on control transistor 558and forward direction signal DIRF 858 discharges to a low voltage levelat 962.

The next series of six timing pulses shifts the high voltage level shiftregister output signal SO12 to the next shift register cell 403 k thatprovides a high voltage level shift register output signal SO11.Shifting continues with each series of six timing pulses until eachshift register output signal SO1-SO13 has been high once. After shiftregister output signal SO1 is high, the series of high voltage levelshift register output signals SO 830 stops. The shift register 402 canbe initiated again by providing a control pulse, such as control pulse870, coincident with a timing pulse from timing signal T2 804.

In reverse direction operation, a control pulse from CSYNC 824 isprovided coincident with a timing pulse from timing signal T6 at 820 toset the direction of shifting to the reverse direction. Also, a controlpulse from CSYNC 824 is provided coincident with a timing pulse fromtiming signal T2 804 to start or initiate the shift register 402shifting a high voltage level signal through the shift register outputsignals SO1-SO13.

FIG. 13 is a block diagram illustrating one embodiment of two addressgenerators 1000 and 1002 and six fire groups 1004 a-1004 f. Each of theaddress generators 1000 and 1002 is similar to address generator 400 ofFIG. 9 and fire groups 1004 a-1004 f are similar to fire groups 202a-202 f illustrated in FIG. 7. The address generator 1000 iselectrically coupled to fire groups 1004 a-1004 c through first addresslines 1006. The address lines 1006 provide address signals ˜A1, ˜A2, . .. ˜A7 from address generator 1000 to each of the fire groups 1004 a-1004c. Also, address generator 1000 is electrically coupled to control line1010. Control line 1010 receives conducts control signal CSYNC toaddress generator 1000. In one embodiment, the CSYNC signal is providedby an external controller to a printhead die on which two addressgenerators 1000 and 1002 and six fire groups 1004 a-1004 f arefabricated. In addition, address generator 1000 is electrically coupledto select lines 1008 a-1008 f. The select lines 1008 a-1008 f aresimilar to select lines 212 a-212 f illustrated in FIG. 7. The selectlines 1008 a-1008 f conduct select signals SEL1, SEL2, SEL6 to addressgenerator 1000, as well as to the corresponding fire groups 1004 a-1004f (not shown).

The select line 1008 a conducts select signal SEL1 to address generator1000, in one embodiment is timing signal T3 timing signal T6. The selectline 1008 b conducts select signal SEL2 to address generator 1000, inone embodiment is timing signal T4 timing signal T1. The select line1008 c conducts select signal SEL3 to address generator 1000 in oneembodiment is timing signal T5 timing signal T2. The select line 1008 dconducts select signal SEL4 to address generator 1000, in one embodimentis timing signal T6 timing signal T3. The select line 1008 e conductsselect signal SEL5 to address generator 1000, in one embodiment istiming signal T1 timing signal T4, and the select line 1008 f conductsselect signal SEL6 to address generator 1000, in one embodiment istiming signal T2 timing signal T5.

The address generator 1002 is electrically coupled to fire groups 1004d-1004 f through second address lines 1012. The address lines 1012provide address signals ˜B1, ˜B2, . . . ˜B7 from address generator 1002to each of the fire groups 1004 d-1004 f. Also, address generator 1002is electrically coupled to control line 1010 that conducts controlsignal CSYNC to address generator 1002. In addition, address generator1002 is electrically coupled to select lines 1008 a-1008 f. The selectlines 1008 a-1008 f conduct select signals SEL1, SEL2, . . . SEL6 toaddress generator 1002, as well as to the corresponding fire groups 1004a-1004 f (not shown).

The select line 1008 a conducts select signal SEL1 to address generator1002, which in one embodiment is timing signal T3. The select line 1008b conducts select signal SEL2 to address generator 1002, which in oneembodiment is timing signal T4. The select line 1008 c conducts selectsignal SEL3 to address generator 1002, which in one embodiment is timingsignal T5. The select line 1008 d conducts select signal SEL4 to addressgenerator 1002, which in one embodiment is timing signal T6. The selectline 1008 e conducts select signal SEL5 to address generator 1002, whichin one embodiment is timing signal T1, and the select line 1008 fconducts select signal SEL6 to address generator 1002, which in oneembodiment is timing signal T2.

The select signals SEL1, SEL2, . . . SEL 6 include a series of sixpulses that repeats in a repeating series of six pulses. Each of theselect signals SEL1, SEL2, . . . SEL6 includes one pulse in the seriesof six pulses. In one embodiment, a pulse in select signal SEL1 isfollowed by a pulse in select signal SEL2, that is followed by a pulsein select signal SEL3, that is followed by a pulse in select signalSEL4, that is followed by a pulse in select signal SEL5, that isfollowed by a pulse in select signal SEL6. After the pulse in selectsignal SEL6, the series repeats beginning with a pulse in select signalSEL1. The control signal CSYNC includes pulses coincident with pulses inselect signals SEL1, SEL2, . . . SEL6 to initiate address generators1000 and 1002 and to set up the direction of shifting or addressgeneration in address generators 1000 and 1002, for example as discussedwith respect to FIGS. 11 and 12. To initiate address generation fromaddress generator 1000, control signal CSYNC includes a control pulsecoincident with a timing pulse in timing signal T2 that corresponds tothe timing pulse in select signal SEL3.

The address generator 1000 generates address signals ˜A1, ˜A2, . . . ˜A7in response to select signals SEL1, SEL2, . . . SEL6 and control signalCSYNC. The address signals ˜A1, ˜A2, . . . ˜A7 are provided throughfirst address lines 1006 to fire groups 1004 a-1004 c.

In address generator 1000, address signals ˜A1, ˜A2, . . . ˜A7 are validduring timing pulses in timing signals T6, T1 and T2 that correspond totiming pulses in select signals SEL1, SEL2 and SEL3. The control signalCSYNC includes a control pulse coincident with a timing pulse in timingsignal T4 that corresponds to the timing pulse in select signal SEL5 toset up address generator 1000 for shifting in the forward direction. Thecontrol signal CSYNC includes a control pulse coincident with a timingpulse in timing signal T6 that corresponds to the timing pulse in selectsignal SEL1 to set up address generator 1000 for shifting in the reversedirection.

The fire groups 1004 a-1004 c receive valid address signals ˜A1, ˜A2, .. . , ˜A7 during the pulses in select signals SEL1, SEL2 and SEL3. Whenfire group one (FG1) at 1004 a receives the address signals ˜A1, ˜A2, .. . ˜A7 and the pulse in select signal SEL1, firing cells 120 inselected row subgroups SG1 are enabled for activation by fire signalFIRE1. When fire group two (FG2) at 1004 b receives the address signals˜A1, ˜A2, . . . ˜A7 and the pulse in select signal SEL2, firing cells120 in selected row subgroups SG2 are enabled for activation by firesignal FIRE2. When fire group three (FG3) at 1004 c receives the addresssignals ˜A1, ˜A2, . . . ˜A7 and the pulse in select signal SEL3, firingcells 120 in selected row subgroups SG3 are enabled for activation byfire signal FIRE3.

The address generator 1002 generates address signals ˜B1, ˜B2, . . . ˜B7in response to the select signals SEL1, SEL2, . . . SEL6 and controlsignal CSYNC. The address signals ˜B1, ˜B2, . . . ˜B7 are providedthrough second address lines 1012 to fire groups 1004 d-1004 f. Inaddress generator 1002, the address signals ˜B1, ˜B2, . . . ˜B7 arevalid during timing pulses in timing signals T6, T1 and T2 thatcorrespond to timing pulses in select signals SEL4, SEL5 and SEL6. Thecontrol signal CSYNC includes a control pulse coincident with a timingpulse in timing signal T4 that corresponds to the timing pulse in selectsignal SEL2 to set up address generator 1002 for shifting in the forwarddirection. The control signal CSYNC includes a control pulse coincidentwith a timing pulse in timing signal T6 that corresponds to the timingpulse in select signal SEL4 to set up address generator 1002 forshifting in the reverse direction. To initiate address generation fromaddress generator 1002, control signal CSYNC includes a control pulsecoincident with a timing pulse in timing signal T2 that corresponds tothe timing pulse in select signal SEL6.

The fire groups 1004 d-1004 f receive valid address signals ˜B1, ˜B2, .. . , ˜B7 during the pulses in select signals SEL4, SEL5 and SEL6. Whenfire group four (FG4) at 1004 d receives the address signals ˜B1, ˜B2, .. . ˜B7 and the pulse in select signal SEL4, firing cells 120 inselected row subgroups SG4 are enabled for activation by fire signalFIRE4. When fire group five (FG5) at 1004 e receives the address signals˜B1, ˜B2, . . . ˜B7 and the pulse in select signal SEL5, firing cells120 in selected row subgroups SG5 are enabled for activation by firesignal FIRE5. When fire group six (FG6) at 1004 f receives the addresssignals ˜B1, ˜B2, . . . ˜B7 and the pulse in select signal SEL6, firingcells 120 in selected row subgroups SG6 are enabled for activation byfire signal FIRE6.

In one example operation, during one series of six pulses, controlsignal CSYNC includes control pulses coincident with the timing pulsesin select signals SEL2 and SEL5 to set up address generators 1000 and1002 for shifting in the forward direction. The control pulse coincidentwith the timing pulse in select signal SEL2 sets up address generator1002 for shifting in the forward direction. The control pulse coincidentwith the timing pulse in select signal SEL5 sets up address generator1000 for shifting in the forward direction.

In the next series of six pulses, control signal CSYNC includes controlpulses coincident with timing pulses in select signals SEL2, SEL3, SEL5and SEL6. The control pulses coincident with timing pulses in selectsignals SEL2 and SEL5 set the direction of shifting to the forwarddirection in address generators 1000 and 1002. The control pulsescoincident with timing pulses in select signals SEL3 and SEL6 initiatethe address generators 1000 and 1002 for generating address signals ˜A1,˜A2, . . . ˜A7 and ˜B1, ˜B2, . . . ˜B7. The control pulse coincidentwith the timing pulse in select signal SEL3 initiates the addressgenerator 1000 and the control pulse coincident with the timing pulse inselect signal SEL6 initiates the address generator 1002.

During the third series of timing pulses, address generator 1000generates address signals ˜A1, ˜A2, . . . ˜A7 that are valid duringtiming pulses in select signals SEL1, SEL2 and SEL3. The valid addresssignals ˜A1, ˜A2, . . . , ˜A7 are used for enabling firing cells 120 inrow subgroups SG1, SG2 and SG3 in fire groups FG1, FG2 and FG3 at 1004a-1004 c for activation. During the third series of timing pulses,address generator 1002 generates address signals ˜B1, ˜B2, . . . ˜B7that are valid during timing pulses in select signals SEL4, SEL5 andSEL6. The valid address signals ˜B1, ˜B2, . . . ˜B7 are used forenabling firing cells 120 in row subgroups SG4, SG5 and SG6 in firegroups FG4, FG5 and FG6 at 1004 d-1004 f for activation.

During the third series of timing pulses in select signals SEL1, SEL2,SEL6, address signals ˜A1, ˜A2, . . . ˜A7 include low voltage levelsignals that correspond to one of thirteen addresses and address signals˜B1, ˜B2, . . . ˜B7 include low voltage level signals that correspond tothe same one of thirteen addresses. During each subsequent series oftiming pulses from select signals SEL1, SEL2, . . . SEL6, addresssignals ˜A1, ˜A2, . . . ˜A7 and address signals ˜B1, ˜B2, . . . ˜B7include low voltage level signals that correspond to the same one ofthirteen addresses. Each series of timing pulses is an address timeslot, such that one of the thirteen addresses is provided during eachseries of timing pulses.

In forward direction operation, address one is provided first by addressgenerators 1000 and 1002, followed by address two and so on throughaddress thirteen. After address thirteen, address generators 1000 and1002 provide all high voltage level address signals ˜A1, ˜A2, . . . ˜A7and ˜B1, ˜B2, . . . ˜B7. Also, during each series of timing pulses fromselect signals SEL1, SEL2, SEL6, control pulses are provided coincidentwith timing pulses in select signals SEL2 and SEL5 to continue shiftingin the forward direction.

In another example operation, during one series of six pulses, controlsignal CSYNC includes control pulses coincident with timing pulses inselect signals SEL1 and SEL4 to set up address generators 1000 and 1002for shifting in the reverse direction. The control pulse coincident withthe timing pulse in select signal SEL1 sets up address generator 1000for shifting in the reverse direction. The control pulse coincident withthe timing pulse in select signal SEL4 sets up address generator 1002for shifting in the reverse direction.

In the next series of six pulses, control signal CSYNC includes controlpulses coincident with the timing pulses in select signals SEL1, SEL3,SEL4 and SEL6. The control pulses coincident with timing pulses inselect signals SEL1 and SEL4 set the direction of shifting to thereverse direction in address generators 1000 and 1002. The controlpulses coincident with timing pulses in select signals SEL3 and SEL6initiate the address generators 1000 and 1002 for generating addresssignals ˜A1, ˜A2, . . . ˜A7 and ˜B1, ˜B2, . . . ˜B7. The control pulsescoincident with the timing pulse in select signal SEL3 initiates addressgenerator 1000 and the control pulse coincident with the timing pulse inselect signal SEL6 initiates address generator 1002.

During the third series of timing pulses, address generator 1000generates address signals ˜A1, ˜A2, . . . ˜A7 that are valid duringtiming pulses in select signals SEL1, SEL2 and SEL3. The valid addresssignals ˜A1, ˜A2, . . . , ˜A7 are used for enabling firing cells 120 inrow subgroups SG1, SG2 and SG3 in fire groups FG1, FG2 and FG3 at 1004a-1004 c for activation. Address generator 1002 generates addresssignals ˜B1, ˜B2, . . . ˜B7 that are valid during timing pulses inselect signals SEL4, SEL5 and SEL6 during the third series of timingpulses. The valid address signals ˜B1, ˜B2, . . . ˜B7 are used forenabling firing cells 120 in row subgroups SG4, SG5 and SG6 in firegroups FG4, FG5 and FG6 at 1004 d-1004 f for activation.

During the third series of timing pulses in select signals SEL1, SEL2,SEL6 in reverse direction operation, address signals ˜A1, ˜A2, . . . ˜A7include low voltage level signals that correspond to one of thirteenaddresses and address signals ˜B1, ˜B2, . . . ˜B7 include low voltagelevel signals that correspond to the same one of thirteen addresses.During each subsequent series of timing pulses from select signals SEL1,SEL2, . . . SEL6, address signals ˜A1, ˜A2, . . . ˜A7 and ˜B1, ˜B2, . .. ˜B7 include low voltage level signals that correspond to the same oneof thirteen addresses. Each series of timing pulses is an address timeslot, such that one of the thirteen addresses is provided during eachseries of timing pulses.

In reverse direction operation, address thirteen is provided first byaddress generator 1000 and 1002, followed by address twelve and so onthrough address one. After address one, address generators 1000 and 1002provide all high voltage level address signals ˜A1, ˜A2, . . . ˜A7 and˜B1, ˜B2, . . . ˜B7. Also, during each series of timing pulses fromselect signals SEL1, SEL2 . . . SEL6 control pulses are providedcoincident with timing pulses in select signals SEL1 and SEL4 tocontinue shifting in the reverse direction.

To terminate or prevent address generation, control signal CSYNCincludes control pulses coincident with timing pulses in select signalsSEL1, SEL2, SEL4 and SEL5. This clears the shift registers, such asshift register 402, in address generators 1000 and 1002. A constant highvoltage level, or a series of high voltage pulses, in control signalCSYNC also terminates or prevents address generation and a constant lowvoltage level in control signal CSYNC will not initiate addressgenerators 1000 and 1002.

FIG. 14 is a timing diagram illustrating forward and reverse operationof address generators 1000 and 1002. The control signal used forshifting in the forward direction is CSYNC(FWD) at 1124 and the controlsignal used for shifting in the reverse direction is CSYNC(REV) at 1126.The address signals ˜A1, ˜A2, . . . ˜A7 at 1128 are provided by addressgenerator 1000 and include both forward and reverse operation addressreferences. The address signals ˜B1, ˜B2, . . . ˜B7 at 1130 are providedby address generator 1002 and include both forward and reverse operationaddress references.

The select signals SEL1, SEL2, . . . SEL6 provide a repeating series ofsix pulses. Each of the select signals SEL1, SEL2, SEL6 includes onepulse in the series of six pulses. In one series of the repeating seriesof six pulses, select signal SEL1 at 1100 includes timing pulse 1102,select signal SEL2 at 1104 includes timing pulse 1106, select signalSEL3 at 1108 includes timing pulse 1110, select signal SEL4 at 1112includes timing pulse 1114, select signal SEL5 at 1116 includes timingpulse 1118 and select signal SEL6 at 1120 includes timing pulse 1122.

In forward direction operation, control signal CSYNC(FWD) 1124 includescontrol pulse 1132 coincident with timing pulse 1106 in select signalSEL2 at 1104. The control pulse 1132 sets up address generator 1002 forshifting in the forward direction. Also, control signal CSYNC(FWD) 1124includes control pulse 1134 coincident with timing pulse 1118 in selectsignal SEL5 at 1116. The control pulse 1134 sets up address generator1000 for shifting in the forward direction.

In the next repeating series of six pulses, the select signal SEL1 at1100 includes timing pulse 1136, select signal SEL2 at 1104 includestiming pulse 1138, select signal SEL3 at 1108 includes timing pulse1140, select signal SEL4 at 1112 includes timing pulse 1142, selectsignal SEL5 at 1116 includes timing pulse 1144 and select signal SEL6 at1120 includes timing pulse 1146.

Control signal CSYNC(FWD) 1124 includes control pulse 1148 coincidentwith timing pulse 1138 to continue setting address generator 1002 forshifting in the forward direction and control pulse 1152 coincident withtiming pulse 1144 to continue setting address generator 1000 forshifting in the forward direction. Also, control signal CSYNC(FWD) 1124includes control pulse 1150 coincident with timing pulse 1140 in selectsignal SEL3 at 1108. The control pulse 1150 initiates address generator1000 for generating address signals ˜A1, ˜A2, . . . ˜A7 at 1128. Inaddition, control signal CSYNC(FWD) 1124 includes control pulse 1154coincident with timing pulse 1146 in select signal SEL6 at 1120. Thecontrol pulse 1154 initiates address generator 1002 for generatingaddress signals ˜B1, ˜B2, . . . ˜B7 at 1130.

In the next or third series of six pulses, select signal SEL1 at 1100includes timing pulse 1156, select signal SEL2 at 1104 includes timingpulse 1158, select signal SEL3 at 1108 includes timing pulse 1160,select signal SEL4 at 1112 includes timing pulse 1162, select signalSEL5 at 1116 includes timing pulse 1164 and select signal SEL6 at 1120includes timing pulse 1166. The control signal CSYNC(FWD) 1124 includescontrol pulse 1168 coincident with timing pulse 1158 to continue settingaddress generator 1002 for shifting in the forward direction and controlpulse 1170 coincident with timing pulse 1164 to continue setting addressgenerator 1000 for shifting in the forward direction.

The address generator 1000 provides address signals ˜A1, ˜A2, . . . ˜A7at 1128. After being initiated in forward direction operation, addressgenerator 1000 and address signals ˜A1, ˜A2, . . . ˜A7 at 1128 provideaddress one at 1172. Address one at 1172 becomes valid during timingpulse 1146 in select signal SEL6 at 1120 and remains valid until timingpulse 1162 in select signal SEL4 at 1112. Address one at 1172 is validduring timing pulses 1156, 1158 and 1160 in select signals SEL1, SEL2and SEL3 at 1100, 1104 and 1108.

The address generator 1002 provides address signals ˜B1, ˜B2, . . . ˜B7at 1130. After being initiated in forward direction operation, addressgenerator 1002 and address signals ˜B1, ˜B2, . . . ˜B7 at 1130 provideaddress one at 1174. Address one at 1174 becomes valid during timingpulse 1160 in select signal SEL3 at 1108 and remains valid until timingpulse 1176 in select signal SEL1 at 1100. Address one at 1174 is validduring timing pulses 1162, 1164 and 1166 in select signals SEL4, SEL5and SEL6 at 1112, 1116 and 1120.

The address signals ˜A1, ˜A2, . . . ˜A7 at 1128 and ˜B1, ˜B2, . . . ˜B7at 1130 provide the same address, address one at 1172 and 1174. Addressone is provided during the series of six timing pulses beginning withtiming pulse 1156 and ending with timing pulse 1166, which is theaddress time slot for address one. During the next series of six pulses,beginning with timing pulse 1176, address signals ˜A1, ˜A2, . . . ˜A7 at1128 provide address two at 1178 and address signals ˜B1, ˜B2, . . . ˜B7at 1130 provide address two also. In this way, address generators 1000and 1002 provide addresses from address one through address thirteen inthe forward direction. After address thirteen, address generators 1000and 1002 are reinitiated to cycle through the valid addresses again inthe same way.

In reverse direction operation, control signal CSYNC(REV) 1126 includescontrol pulse 1180 coincident with timing pulse 1102 in select signalSEL1 at 1100. The control pulse 1180 sets up address generator 1000 forshifting in the reverse direction. Also, control signal CSYNC(REV) 1126includes control pulse 1182 coincident with timing pulse 1114 in selectsignal SEL4 at 1112. The control pulse 1182 sets up address generator1002 for shifting in the reverse direction.

Control signal CSYNC(REV) 1126 includes control pulse 1184 coincidentwith timing pulse 1136 to continue setting address generator 1000 forshifting in the reverse direction and control pulse 1188 coincident withtiming pulse 1142 to continue setting address generator 1002 forshifting in the reverse direction. Also, control signal CSYNC(REV) 1126includes control pulse 1186 coincident with timing pulse 1140 in selectsignal SEL3 at 1108. The control pulse 1186 initiates address generator1000 for generating address signals ˜A1, ˜A2, . . . ˜A7 at 1128. Inaddition, control signal CSYNC(REV) 1126 includes control pulse 1190coincident with timing pulse 1146 in select signal SEL6 at 1120. Thecontrol pulse 1190 initiates address generator 1002 for generatingaddress signals ˜B1, ˜B2, . . . ˜B7 at 1130.

The control signal CSYNC(REV) 1126 includes control pulse 1192coincident with timing pulse 1156 to continue setting address generator1000 for shifting in the reverse direction and control pulse 1194coincident with timing pulse 1162 to continue setting address generator1002 for shifting in the reverse direction.

The address generator 1000 provides address signals ˜A1˜A7 at 1128.After being initiated in reverse direction operation, address generator1000 and address signals ˜A1, ˜A2, . . . ˜A7 at 1128 provide addressthirteen at 1172. Address thirteen at 1172 becomes valid during timingpulse 1146 and remains valid until timing pulse 1162. Address thirteenat 1172 is valid during timing pulses 1156, 1158 and 1160 in selectsignals SEL1, SEL2 and SEL3 at 1100, 1104 and 1108.

The address generator 1002 provides address signals ˜B1, ˜B2, . . . ˜B7at 1130. After being initiated in reverse direction operation, addressgenerator 1002 and address signals ˜B1, ˜B2, . . . ˜B7 at 1130 provideaddress thirteen at 1174. Address thirteen at 1174 becomes valid duringtiming pulse 1160 and remains valid until timing pulse 1176. Addressthirteen at 1174 is valid during timing pulses 1162, 1164 and 1166 inselect signals SEL4, SEL5 and SEL6 at 1112, 1116 and 1120.

The address signals ˜A1, ˜A2, . . . ˜A7 at 1128 and ˜B1, ˜B2, . . . ˜B7at 1130 provide the same address, address thirteen at 1172 and 1174.Address thirteen is provided during the series of six timing pulsesbeginning with timing pulse 1156 and ending with timing pulse 1166,which is the address time slot for address thirteen. During the nextseries of six pulses, beginning with timing pulse 1176, address signals˜A1, ˜A2, . . . ˜A7 at 1128 provide address twelve at 1178 and addresssignals ˜B1, ˜B2, . . . ˜B7 at 1130 provide address twelve also. Addressgenerators 1000 and 1002 provide addresses from address thirteen throughaddress one in the reverse direction. After address one, addressgenerators 1000 and 1002 are reinitiated to provide valid addressesagain.

FIG. 15 is a block diagram illustrating one embodiment of an addressgenerator 1200, a latch circuit 1202 and six fire groups 1204 a-1204 fin a printhead die 40. The address generator 1200 is similar to addressgenerator 400 of FIG. 9 and fire groups 1204 a-1204 f are similar tofire groups 202 a-202 f illustrated in FIG. 7.

The address generator 1200 is electrically coupled to fire groups 1204a-1204 c and to latch circuit 1202 through address lines 1206. Also,address generator 1200 is electrically coupled to control line 1210 thatconducts control signal CSYNC to address generator 1200. In addition,address generator 1200 is electrically coupled to select lines 1208a-1208 f. The select lines 1208 a-1208 f are similar to select lines 212a-212 f illustrated in FIG. 7. The select lines 1208 a-1208 f conductselect signals SEL1, SEL2, . . . SEL6 to address generator 1200, as wellas to the corresponding fire groups 1204 a-1204 f (not shown).

The select line 1208 a conducts select signal SEL1 to address generator1200, which in one embodiment is timing signal T6. The select line 1208b conducts select signal SEL2 to address generator 1200, which in oneembodiment timing signal T1. The select line 1208 c conducts selectsignal SEL3 to address generator 1200, which in one embodiment is timingsignal T2. The select line 1208 d conducts select signal SEL4 to addressgenerator 1200, which in one embodiment is timing signal T3. The selectline 1208 e conducts select signal SEL5 to address generator 1200, whichin one embodiment is timing signal T4, and the select line 1208 fconducts select signal SEL6 to address generator 1200, which in oneembodiment is timing signal T5.

The latch circuit 1202 is electrically coupled to fire groups 1204c-1204 f through address lines 1212. Also, latch circuit 1202 iselectrically coupled to select lines 1208 a and 1208 f and evaluationsignal line 1214. The select lines 1208 a and 1208 f receive selectsignals SEL1 and SEL6 and provide the received select signals SEL1 andSEL6 to latch circuit 1202. The evaluation line 1214 conducts evaluationsignal EVAL, which is similar to the inverse of select signal SEL1, tolatch circuit 1202. In addition, latch circuit 1202 is electricallycoupled to address lines 1206 that conducts the address signals ˜A1,˜A2, . . . ˜A7 to latch circuit 1202. In one embodiment, evaluationsignal EVAL is generated on printhead die 40 from select signals SEL1,SEL2, SEL6.

The select signals SEL1, SEL2, . . . SEL6 provide a series of six pulsesthat repeats in a repeating series of six pulses, as described withrespect to FIGS. 13 and 14. The control signal CSYNC includes pulsescoincident with pulses in select signals SEL1, SEL2, . . . SEL6 toinitiate address generator 1200 and to set up the direction of shiftingand address generation in address generator 1200.

The address generator 1200 generates address signals ˜A1, ˜A2, . . . ˜A7in response to the select signals SEL1, SEL2, . . . SEL6 and controlsignal CSYNC. The address signals ˜A1, ˜A2, . . . ˜A7 are providedthrough address lines 1206 to fire groups 1204 a-1204 c. In addressgenerator 1200, address signals ˜A1, ˜A2, . . . ˜A7 are valid duringtiming pulses in timing signals T6, T1 and T2 that correspond to timingpulses in select signals SEL1, SEL2 and SEL3. The control signal CSYNCincludes a control pulse coincident with a timing pulse in timing signalT4 that corresponds to the timing pulse in select signal SEL5 to set upaddress generator 1200 for shifting in the forward direction. Thecontrol signal CSYNC includes a control pulse coincident with a timingpulse in timing signal T6 that corresponds to the timing pulse in selectsignal SEL1 to set up address generator 1200 for shifting in the reversedirection. To initiate address generation from address generator 1200,control signal CSYNC includes a control pulse coincident with a timingpulse in timing signal T2 that corresponds with the timing pulse inselect signal SEL3.

The latch circuit 1202 provides address signals ˜B1, ˜B2, . . . ˜B7 inresponse to receiving address signals ˜A1, ˜A2, . . . ˜A7, selectsignals SEL1 and SEL6 and evaluation signal EVAL. The address latch 1202receives valid address signals ˜A1, ˜A2, . . . ˜A7 during the timingpulse in select signal SEL1 and latches in the valid address signals˜A1, ˜A2, . . . ˜A7 to provide address signals ˜B1, ˜B2, . . . ˜B7. Theaddress signals ˜A1, ˜A2, . . . ˜A7 and ˜B1, ˜B2, . . . ˜B7 provide thesame address to fire groups 1204 a-1204 f during one address time slot.The address signals ˜B1, ˜B2, . . . ˜B7 are provided through addresslines 1212 to fire groups 1204 c-1204 f. The address signals ˜B1, ˜B2, .. . ˜B7 are valid during timing pulses in select signals SEL3, SEL4,SEL5 and SEL6.

In one example operation, during one series of six pulses, controlsignal CSYNC includes a control pulse coincident with a timing pulse inselect signal SEL5 to set up address generator 1200 for shifting in theforward direction or coincident with a timing pulse in select signalSEL1 for shifting in the reverse direction. Address generator 1200 isnot initiated during this series of six pulses and, in this example,provides all high voltage level address signals ˜A1, ˜A2, . . . ˜A7. Thelatch circuit 1202 latches in the high voltage level address signals˜A1, ˜A2, . . . ˜A7 to provide high voltage level address signals ˜B1,˜B2, . . . ˜B7.

In the next series of six timing pulses, control signal CSYNC includes acontrol pulse coincident with the timing pulse in select signal SEL5 orselect signal SEL1 to set up the selected direction of shifting inaddress generator 1200. Also, control signal CSYNC includes a controlpulse coincident with the timing pulse in select signal SEL3 to initiateaddress generator 1200 for generating valid address signals ˜A1, ˜A2, .. . ˜A7. During this second series of six pulses, address generator 1200provides all high voltage level address signals ˜A1, ˜A2, . . . ˜A7 andlatch 1202 latches in address signals ˜A1, ˜A2, . . . ˜A7 to provide allhigh voltage level address signals ˜B1, ˜B2, . . . ˜B7.

In the next series of six timing pulses, control signal CSYNC includes acontrol pulse coincident with the timing pulse in select signal SEL5 orSEL1 to set up the selected direction of shifting in address generator1200. During this third series of six pulses, address generator 1200provides valid address signals ˜A1, ˜A2, . . . ˜A7 including low voltagelevel signals during the timing pulses from select signals SEL1, SEL2and SEL3. The valid address signals ˜A1, ˜A2, . . . ˜A7 are used forenabling firing cells 120 in row subgroups SG1, SG2 and SG3 in firinggroups FG1, FG2 and FG3 at 1204 a-1204 c for activation. Latch circuit1202 latches in the valid address signals ˜A1, ˜A2, . . . ˜A7 andprovides valid address signals ˜B1, ˜B2, . . . ˜B7. The latch circuit1202 provides the valid address signals ˜B1, ˜B2, . . . ˜B7 during thetiming pulses from select signals SEL3, SEL4, SEL5 and SEL6. The validaddress signals ˜B1, ˜B2, . . . ˜B7 are used for enabling firing cells120 in row subgroups SG3, SG4, SG5 and SG6 in fire groups FG3, FG4, FG5and FG6 at 1204 c-1204 f for activation.

During the third series of timing pulses from select signals SEL1, SEL2,. . . SEL6, address signals ˜A1, ˜A2, . . . ˜A7 include low voltagelevel signals that correspond to one of thirteen addresses and addresssignals ˜B1, ˜B2, . . . ˜B7 include low voltage level signals thatcorrespond to the same one of the thirteen addresses. During eachsubsequent series of six pulses from select signals SEL1, SEL2, . . .SEL6, address signals ˜A1, ˜A2, . . . ˜A7 and ˜B1, ˜B2, . . . ˜B7include low voltage level signals that correspond to the same one ofthirteen addresses. Each series of timing pulses is an address timeslot, such that one of the thirteen addresses is provided during eachseries of six pulses.

In forward direction operation, address one is provided first by addressgenerator 1200 and latch circuit 1202, followed by address two and so onthrough address thirteen. After address thirteen, the address generator1200 and latch circuit 1202 provide all high voltage level addresssignals ˜A1, ˜A2, . . . ˜A7 and ˜B1, ˜B2, . . . ˜B7.

In reverse direction operation, address thirteen is provided first byaddress generator 1200 and latch circuit 1202, followed by addresstwelve and so on through address one. After address one, addressgenerator 1200 and latch circuit 1202 provide all high voltage leveladdress signals ˜A1, ˜A2, . . . ˜A7 and ˜B1, ˜B2, . . . ˜B7. Also,during each series of six pulses from select signals SEL1, SEL2, . . .SEL6, a control pulse is provided coincident with a timing pulse inselect signal SEL5 or SEL1 to continue shifting in the selecteddirection.

FIG. 16 is a diagram illustrating one embodiment of a latch register1220. The latch circuit 1202 includes seven latch registers, such aslatch register 1220. Each latch register 1220 latches in one of theseven address signals ˜A1, ˜A2, . . . ˜A7 and provides the correspondinglatched address signals ˜B1, ˜B2, . . . ˜B7. The latch register 1220includes a first latch stage 1222, a second latch stage 1224 and a latchtransistor 1226. The first latch stage 1222 is electrically coupled at1228 to one side of the drain-source path of latch transistor 1226 andthe second latch stage 1224 is electrically coupled at 1230 to the otherside of the drain-source path of latch transistor 1226. The gate oflatch transistor 1226 is electrically coupled to signal line 1208 a thatconducts select signal SEL1 to latch transistor 1226 as latch signalLATCH.

The first latch stage 1222 includes a first pre-charge transistor 1234,a select transistor 1236, an address transistor 1238 and an address nodecapacitor 1240. The gate of the first pre-charge transistor 1234 iselectrically coupled to the drain of first pre-charge transistor 1234and to a signal line 1208 f that conducts select signal SEL6 to firstpre-charge transistor 1234 as first pre-charge signal PRE1. The sourceof first pre-charge transistor 1234 is electrically coupled at 1228 toone side of the drain-source path of latch transistor 1226 and to oneside of address node capacitor 1240. The other side of address nodecapacitor 1240 is electrically coupled to a reference voltage, such asground. In addition, the source of first pre-charge transistor 1234 iselectrically coupled to one side of the drain-source path of selecttransistor 1236. The gate of select transistor 1236 is electricallycoupled to select line 1208 a that conducts select signal SEL1 to selecttransistor 1236. The other side of the drain-source path of selecttransistor 1236 is electrically coupled to one side of the drain-sourcepath of address transistor 1238. The other side of the drain-source pathof address transistor 1238 is electrically coupled to a referencevoltage, such as ground. The gate of address transistor 1238 iselectrically coupled to one of the address lines 1206.

The second latch stage 1224 includes a second pre-charge transistor1246, an evaluation transistor 1248, a latched address transistor 1250and a latched address node capacitor 1252. The gate of the secondpre-charge transistor 1246 is electrically coupled to the drain ofsecond pre-charge transistor 1246 and to signal line 1208 a thatconducts select signal SEL1 to the second pre-charge transistor 1246 assecond pre-charge signal PRE2. The source of second pre-chargetransistor 1246 is electrically coupled to one side of the drain-sourcepath of evaluation transistor 1248 and to one of the latched addresslines 1212. The gate of evaluation transistor 1248 is electricallycoupled to evaluation signal line 1214. The other side of thedrain-source path of evaluation transistor 1248 is electrically coupledto the drain-source path of latched address transistor 1250. The otherside of the drain-source path of latched address transistor 1250 iselectrically coupled to a reference voltage, such as ground. The gate oflatched address transistor 1250 is electrically coupled at 1230 to thedrain-source path of latch transistor 1226. In addition, the gate oflatched address transistor 1250 is electrically coupled at 1230 to oneside of latched address node capacitor 1252. The other side of latchedaddress node capacitor 1252 is electrically coupled to a referencevoltage, such as ground.

The first pre-charge transistor 1234 receives pre-charge signal PRE1through signal line 1208 f, and select transistor 1236 receives selectsignal SEL1 through signal line 1208 a. If select signal SEL1 is set toa low voltage level and pre-charge signal PRE1 is set to a high voltagelevel, select transistor 1236 is turned off (non-conducting) and addressnode capacitor 1240 charges to a high voltage level through pre-chargetransistor 1234.

The address transistor 1238 receives one of the address signals ˜A1,˜A2, . . . ˜A7 through address line 1206. If the received address signal˜A1, ˜A2, . . . ˜A7 is set to a high voltage level, address transistor1238 is turned on (conducting) and if the received address signal ˜A1,˜A2, . . . ˜A7 is set to a low voltage level, address transistor 1238 isturned off (non-conducting). Select transistor 1236 is turned on asselect signal SEL1 transitions to a high voltage level. If addresstransistor 1238 is on, address node capacitor 1240 is discharged to alow voltage level. If address transistor 1238 is off and address nodecapacitor 1240 is charged to a high voltage level, address nodecapacitor 1240 is not discharged and remains at the high voltage level.

The latch transistor 1226 receives latch signal LATCH through signalline 1208 a. If latch signal LATCH is set to a high voltage level, latchtransistor 1226 is turned on and if latch signal LATCH is set to a lowvoltage level, latch transistor 1226 is turned off. The latch transistor1226 is turned on to pass the voltage level on address node capacitor1240 to latched address node capacitor 1252. The capacitance of theaddress node capacitor 1240 is about three times larger than thecapacitance of the latched address node capacitor 1252 such that whencharge is moved between address node capacitor 1240 and latched addressnode capacitor 1252, adequate high or low voltage levels remain oncapacitors 1240 and 1252.

If latch transistor 1226 is off as address node capacitor 1240 chargesto a high voltage level through first pre-charge transistor 1234, thevoltage level on latched address node capacitor 1252 remains unchanged.The address node capacitor 1240 is pre-charged without affecting thesecond latch stage 1224 of latch register 1220, including the latchedaddress signal on latched address line 1212. If the latch transistor1226 is on as address node capacitor 1240 charges to a high voltagelevel through first pre-charge transistor 1234, latched address nodecapacitor 1252 is charged to a high voltage level and latched addresstransistor 1250 is turned on. The second latch stage 1224, including thelatched address signal on latched address line 1212, is affected as theaddress node capacitor 1240 and latched address node capacitor 1252 arecharged to a high voltage level through first pre-charge transistor1234. In one embodiment, latch transistor 1226 is removed from betweenfirst latch stage 1222 and second latch stage 1224. In addition, latchedaddress node capacitor 1252 can be removed and the capacitance value ofaddress node capacitor 1240 can be reduced as the address node capacitor1240 no longer needs to charge or discharge latched address nodecapacitor 1252. In this embodiment, address node capacitor 1240 ispre-charged through first pre-charge transistor 1234 to turn on latchedaddress transistor 1250 in the second latch stage 1224 and pre-chargingof address node capacitor 1240 is not isolated from second latch stage1224.

The second pre-charge transistor 1246 receives pre-charge signal PRE2through signal line 1208 a, and evaluation transistor 1248 receives anevaluation signal EVAL through evaluation signal line 1214. Ifevaluation signal EVAL is set to a low voltage level and pre-chargesignal PRE2 is set to a high voltage level, evaluation transistor 1248is turned off and latched address line 1212 charges to a high voltagelevel through pre-charge transistor 1246.

The latch transistor 1226 is turned on to pass the voltage level onaddress node capacitor 1240 to latched address node capacitor 1252. Ahigh voltage level turns on latched address transistor 1250 and a lowvoltage level turns off latched address transistor 1250. The evaluationsignal EVAL is set to a high voltage level to turn on evaluationtransistor 1248 and discharge the latched address signal to a lowvoltage level if latched address transistor 1250 is turned on. If thelatched address transistor 1250 is off as evaluation transistor 1248 isturned on, the latched address line 1212 remains at a high voltagelevel. The latch transistor 1226 is turned off to latch in the voltagelevel on latched address node capacitor 1252 and the state of latchedaddress transistor 1250.

In an example operation of one embodiment of latch register 1220, firstpre-charge signal PRE1, select signal SEL1 and latch signal LATCH areset to a low voltage level. In addition, second pre-charge signal PRE2is set to a low voltage level and evaluation signal EVAL is set to ahigh voltage level. With latch signal LATCH at a low voltage level,latch transistor 1226 is turned off to latch in the voltage level onlatched address node capacitor 1252 that sets the on/off state oflatched address transistor 1250. With evaluation signal EVAL set to ahigh voltage level, evaluation transistor 1248 is turned on to dischargethe latched address signal if latched address transistor 1250 is turnedon. With pre-charge signal PRE2 set to a low voltage level, the voltagelevel on latched address line 1212 corresponds to the state of latchedaddress transistor 1250. If latched address transistor 1250 is on,latched address signal ˜B1, ˜B2, . . . ˜B7 on latched address line 1212is actively driven to a low voltage level. If latched address transistor1250 is off, latched address signal ˜B1, ˜B2, . . . ˜B7 on latchedaddress line 1212 remains at a pre-charged high voltage level.

The first pre-charge signal PRE1 is set to a high voltage level topre-charge address node capacitor 1240 to a high voltage level. Asaddress node capacitor 1240 is charged to a high voltage level, a validaddress signal ˜A1, ˜A2, . . . ˜A7 is provided on address line 1206 toaddress transistor 1238. The valid address signal ˜A1, ˜A2, . . . ˜A7sets the on/off state of address transistor 1238 and pre-charge signalPRE1 transitions to a low voltage level at the end of the firstpre-charge time period.

Next, select signal SEL1, latch signal LATCH and pre-charge signal PRE2are set to a high voltage level and evaluation signal EVAL is set to alow voltage level. The select signal SEL1 turns on select transistor1236 and latch signal LATCH turns on latch transistor 1226. If the validaddress signal ˜A1, ˜A2, . . . ˜A7 on signal line 1206 is at a highvoltage level, address transistor 1238 is turned on and address nodecapacitor 1240 and latched address node capacitor 1252 are discharged toa low voltage level. If the valid address signal ˜A1, ˜A2, . . . ˜A7 onsignal line 1206 is at a low voltage level, address transistor 1238 isturned off and address node capacitor 1240 charges latched address nodecapacitor 1252 to a high voltage level. The inverse of the valid addresssignal ˜A1, ˜A2, . . . ˜A7 received on signal line 1206 is stored oncapacitors 1240 and 1252.

The voltage level on latched address capacitor 1252 sets the on/offstate of latched address transistor 1250. With evaluation signal EVALset to a low voltage level and pre-charge signal PRE2 set to a highvoltage level, evaluation transistor 1248 is turned off and latchaddress line 1212 is charged to a high voltage level. The select signalSEL1, latch signal LATCH and pre-charge signal PRE2 are set to a lowvoltage level at the end of the select time period. With latch signalLATCH at a low voltage level, latch transistor 1226 is turned off tolatch in the state of latched address transistor 1250.

Next, evaluation signal EVAL is set to a high voltage level to turn onevaluation transistor 1248. If the latched address node capacitor 1252is charged to a high voltage level to turn on latch address transistor1250, the latched address line 1212 is discharged to a low voltagelevel. If the latched address node capacitor 1252 is at a low voltagelevel to turn off latched address transistor 1250, latched address line1212 remains charged to a high voltage level. Thus, the inverse of theaddress signal ˜A1, ˜A2, . . . ˜A7 is present on the latched addressnode capacitor 1252 and the inverse of the voltage level on the latchedaddress node capacitor 1252 is present on the latched address line 1212as latched address signal ˜B1, ˜B2, . . . ˜B7. The address signal ˜A1,˜A2, . . . ˜A7 is latched into latch register 1220 and provided aslatched address signal ˜B1, ˜B2, . . . ˜B7 on latched address line 1212.The latched address signal ˜B1, ˜B2, . . . ˜B7 remains valid aspre-charge signal PRE1 is toggled high to charge address node capacitor1240 with latch transistor 1226 turned off. The latched address signal˜B1, ˜B2, . . . ˜B7 becomes invalid as select signal SEL1, latch signalLATCH and pre-charge signal PRE2 are set to a high voltage level andevaluation signal EVAL is set to a low voltage level.

FIG. 17 is a timing diagram illustrating an example operation of oneembodiment of latch register 1220. Address signals ˜A1, ˜A2, . . . ˜A7at 1300 are in transition at 1302. Pre-charge signal PRE1 at 1304 is setto a high voltage level at 1306 for one time period, indicated at 1308.During time period 1308, select signal SEL1 at 1310 and latch signalLATCH at 1312 are set to a low voltage level to turn off selecttransistor 1236 and latch transistor 1226, respectively. The highvoltage level of pre-charge signal PRE1 at 1306, charges address nodecapacitor 1240 through pre-charge transistor 1234. With latch transistor1226 turned off, the voltage level on latched address node capacitor1252 remains unchanged. In addition, during time period 1308, pre-chargesignal PRE2 at 1314 is at a low voltage level and evaluation signal EVALat 1316 is at a high voltage level to turn on evaluation transistor1248. The latched address signal ˜B1, ˜B2, . . . ˜B7 at 1318 remainsunchanged.

The address signals ˜A1, ˜A2, . . . ˜A7 at 1300 are provided by addressgenerator 1200 and become valid address signals ˜A1, ˜A2, . . . ˜A7 at1320. One of the valid address signals ˜A1, ˜A2, . . . ˜A7 at 1320 isprovided on signal line 1206 to set the on/off state of addresstransistor 1238. The pre-charge signal PRE1 at 1304 transitions low at1322 at the end of time period 1308.

The address signals ˜A1, ˜A2, . . . ˜A7 at 1300 remain valid at 1324during the next time period, indicated at 1326. During the time periodat 1326, pre-charge signal PRE1 at 1304 remains at a low voltage levelwhile select signal SEL1 at 1310 transitions to a high voltage level at1328, latch signal LATCH at 1312 transitions to a high voltage level at1330, pre-charge signal PRE2 at 1314 transitions to a high voltage levelat 1332 and evaluation signal EVAL at 1316 transitions to a low voltagelevel at 1334. The valid address signal ˜A1, ˜A2, . . . ˜A7 at 1324 setsthe on/off state of address transistor 1238. With select signal SEL1 at1310 set to a high voltage level and latch signal LATCH at 1312 set to ahigh voltage level, the voltage level on address node capacitor 1240 andlatched address node capacitor 1252 is based on the state of addresstransistor 1238. If address transistor 1238 is turned on by the validaddress signal ˜A1, ˜A2, . . . ˜A7 at 1324, address node capacitor 1240and latched address node capacitor 1252 are discharged to a low voltagelevel. If address transistor 1238 is turned off by the valid addresssignal ˜A1, ˜A2, . . . ˜A7 at 1324, address node capacitor 1240 andlatched address node capacitor 1252 remain at a high voltage level.

With pre-charge signal PRE2 at 1314 set to a high voltage level at 1332and evaluation signal EVAL at 1316 set to a low voltage level at 1334,evaluation transistor 1248 is turned off and the latched address line1212 is charged to a high voltage level through second pre-chargetransistor 1246. As the evaluation signal EVAL at 1316 transitions to alow voltage level at 1334 and pre-charge signal PRE2 at 1314 transitionsto a high voltage level at 1332, latched address signals ˜B1, ˜B2, . . .˜B7 at 1318 transition to invalid latched address signals at 1336. Atthe end of time period 1326, select signal SEL1 at 1310 transitions to alow voltage level at 1338 to turn off select transistor 1236, latchsignal LATCH at 1312 transitions to a low voltage level at 1340 to turnoff latch transistor 1226 and pre-charge signal PRE2 at 1314 transitionsto a low voltage level at 1342 to stop charging latched address line1212 through pre-charge transistor 1246. Turning off latch transistor1226, latches in the voltage level on latched address node capacitor1252 to turn on or off latched address transistor 1250.

The evaluation signal EVAL at 1316 transitions to a high voltage levelat 1344, during the next time period, indicated at 1346. As theevaluation signal EVAL at 1316 transitions to a high voltage level at1344, the latched address signals ˜B1, ˜B2, . . . ˜B7 at 1318, includingthe signal on latched address line 1212, become valid at 1348. Theaddress signals ˜A1, ˜A2, . . . ˜A7 at 1300 provided by addressgenerator 1200 remain valid during time period 1346. In addition, boththe address signals ˜A1, ˜A2, . . . ˜A7 at 1300 and the latched addresssignals ˜B1, ˜B2, . . . ˜B7 at 1318 remain valid for the following timeperiod, indicated at 1350.

The address signals ˜A1, ˜A2, . . . ˜A7 at 1300 become invalid addresssignals at 1352, at the beginning of the time period indicated at 1354.In addition, address signals ˜A1, ˜A2, . . . ˜A7 at 1300 remain invalidduring the time period indicated at 1356. The latched address signals˜B1, ˜B2, . . . ˜B7 remain valid during time periods 1354 and 1356.

Address signals ˜A1, ˜A2, . . . ˜A7 at 1300 are in transition at 1358,during the time period indicated at 1360, and become valid addresssignals ˜A1, ˜A2, . . . ˜A7 at 1362. Pre-charge signal PRE1 at 1304transitions to a high voltage level at 1364 and latched address signals˜B1, ˜B2, . . . ˜B7 are valid during time period 1360. Time period 1360is similar to time period 1308 and the cycle repeats itself through timeperiods 1326, 1346, 1350, 1354 and 1356.

In this embodiment, the cycle includes six time periods, such as timeperiods 1326, 1346, 1350, 1354, 1356 and 1360. The address signals ˜A1,˜A2, . . . ˜A7 at 1300 are valid for three time periods 1326, 1346 and1350 and the latched address signals ˜B1, ˜B2, . . . ˜B7 at 1318 arevalid for four time periods 1350, 1354, 1356 and 1360. Address signals˜A1, ˜A2, . . . ˜A7 at 1300 and latched address signals ˜B1, ˜B2, . . .˜B7 at 1318 are both valid during time period 1350. The latch register1220 latches in address signals ˜A1, ˜A2, . . . ˜A7 at 1300 while thelatched address signals ˜B1, ˜B2, . . . ˜B7 at 1318 are invalid for twotime periods, such as time periods 1326 and 1346. In other embodiments,the number of time periods in a cycle can be set to any suitable numberof time periods and the latch circuit 1202 can latch in address signals˜A1, ˜A2, . . . ˜A7 at 1300 in two or more time periods.

FIG. 18 is a diagram illustrating one embodiment of a single directionshift register cell 1400 for use in other address generator embodimentsthat provide addresses in forward and reverse directions. The shiftregister cell 1400 includes a first stage that is an input stage,indicated with dashed lines at 1402, and a second stage that is anoutput stage, indicated with dashed lines at 1404. The first stage 1402includes a first pre-charge transistor 1406, a first evaluationtransistor 1408 and an input transistor 1410. The second stage 1404includes a second pre-charge transistor 1412, a second evaluationtransistor 1414 and an internal node transistor 1416.

In the first stage 1402, the gate and one side of the drain-source pathof first pre-charge transistor 1406 is electrically coupled to firstpre-charge line 1418. The first pre-charge line 1418 conducts timingpulses in first pre-charge signal PRE1 to shift register cell 1400. Theother side of the drain-source path of first pre-charge transistor 1406is electrically coupled to one side of the drain-source path of firstevaluation transistor 1408 and the gate of internal node transistor 1416through internal node 1420. The internal node 1420 provides internalnode signal SN between stages 1402 and 1404 to the gate of internal nodetransistor 1416.

The gate of first evaluation transistor 1408 is electrically coupled tofirst evaluation signal line 1422 that conducts timing pulses in firstevaluation signal EVAL1 to shift register cell 1400. The other side ofthe drain-source path of first evaluation transistor 1408 iselectrically coupled to one side of the drain-source path of inputtransistor 1410 at 1424. The gate of input transistor 1410 iselectrically coupled to the input line 1411. The other side of thedrain-source path of input transistor 1410 is electrically coupled to areference, such as ground, at 1426.

In the second stage 1404, the gate and one side of the drain-source pathof second pre-charge transistor 1412 are electrically coupled to secondpre-charge line 1428. The second pre-charge line 1428 conducts timingpulses in a second pre-charge signal PRE2 to shift register cell 1400.The other side of the drain-source path of second pre-charge transistor1412 is electrically coupled to one side of the drain-source path ofsecond evaluation transistor 1414 and shift register output line 1430.The gate of second evaluation transistor 1414 is electrically coupled tothe second evaluation signal line 1432 that conducts second evaluationsignal EVAL2 to shift register cell 1400. The other side of thedrain-source path of second evaluation transistor 1414 is electricallycoupled to one side of the drain-source path of internal node transistor1416 at 1434. The other side of the drain-source path of internal nodetransistor 1416 is electrically coupled to a reference, such as ground,at 1436. The gate of the internal node transistor 1416 includes acapacitance 1438 for storing internal node signal SN. The shift registercell output line at 1430 includes a capacitance 1440 that stores theshift register cell output signal SO.

Shift register cell 1400 receives an input signal SI and through aseries of pre-charge and evaluate operations, stores the value of inputsignal SI as output signal SO. The first stage 1402 receives inputsignal SI and stores the inverse of input signal SI as internal nodesignal SN. The second stage 1404 receives internal node signal SN andstores the inverse of internal node signal SN as output signal SO.

In operation, shift register cell 1400 receives a timing pulse in firstpre-charge signal PRE1 that pre-charges internal node 1420 and internalnode signal SN to a high voltage level through first pre-chargetransistor 1406. Next, shift register cell 1400 receives a timing pulsein first evaluation signal EVAL1 that turns on first evaluationtransistor 1408. If input signal SI is at a low voltage level that turnsoff input transistor 1410, internal node 1420 and internal node signalSN remain charged to a high voltage level. If input signal SI is at ahigh voltage level that turns on input transistor 1410, internal node1420 and internal node signal SN discharge to a low voltage level.

Shift register cell 1400 receives a timing pulse in second pre-chargesignal PRE2 that pre-charges output signal line 1430 and output signalSO to a high voltage level. Previous to the timing pulse in secondpre-charge signal PRE2 the output line 1430 can store a valid outputsignal SO. Next, shift register cell 1400 receives a timing pulse insecond evaluation signal EVAL2 that turns on second evaluationtransistor 1414. If internal node signal SN is at a low voltage levelthat turns off internal node transistor 1416, output line 1430 andoutput signal SO remain charged to a high voltage level. If internalnode signal SN is at a high voltage level that turns on internal nodetransistor 1416, output line 1430 and output signal SO are discharged toa low voltage level.

FIG. 19 is a diagram illustrating an address generator 1500 that usesshift register cell 1400 to provide addresses in forward and reversedirections. The address generator 1500 includes a first shift register1502, a second shift register 1504, a first logic circuit 1506, a secondlogic circuit 1508 and a direction circuit 1510.

The first shift register 1502 is electrically coupled to first logiccircuit 1506 through shift register output lines 1512 a-1512 m. Theshift register output lines 1512 a-1512 m provide shift register outputsignals SO1-SO13 to logic circuit 1506 as logic circuit input signalsAI1-AI13, respectively. Also, first shift register 1502 is electricallycoupled to control signal line 1514 that conducts control signal CSYNCto first shift register 1502. In addition, first shift register 1502receives timing pulses from timing signals T1-T4.

First shift register 1502 is electrically coupled to first timing signalline 1516 that conducts timing signal T1 to first shift register 1502 asfirst pre-charge signal PRE1. First shift register 1502 is electricallycoupled to first resistor divide network 1518 through first evaluationsignal line 1520. The first resistor divide network 1518 is electricallycoupled to second timing signal line 1522 that conducts timing signal T2to first resistor divide network 1518. The first resistor divide network1518 provides a reduced voltage level T2 timing signal to first shiftregister 1502 through first evaluation signal line 1520 as firstevaluation signal EVAL1. First shift register 1502 is electricallycoupled to third signal line 1524 that conducts timing signal T3 tofirst shift register 1502 as second pre-charge signal PRE2. First shiftregister 1502 is electrically coupled to second resistor divide network1526 through second evaluation signal line 1528. The second resistordivide network 1526 is electrically coupled to fourth timing signal line1530 that provides timing signal T4 to second resistor divide network1526. The second resistor divide network 1526 provides a reduced voltagelevel T4 timing signal to first shift register 1502 through secondevaluation signal line 1528 as second evaluation signal EVAL2.

The second shift register 1504 is electrically coupled to second logiccircuit 1508 through shift register output lines 1532 a-1532 m. Theshift register output lines 1532 a-1532 m conduct shift register outputsignals SO1-SO13 to logic circuit 1508 as logic circuit input signalsAI13-AI1, respectively. Also, second shift register 1504 is electricallycoupled to control signal line 1514 that conducts control signal CSYNCto second shift register 1504. In addition, second shift register 1504receives timing pulses from timing pulses T1-T4.

Second shift register 1504 is electrically coupled to first timingsignal line 1516 that conducts timing signal T1 to second shift register1504 as first pre-charge signal PRE1. Second shift register 1504 iselectrically coupled to first evaluation signal line 1520 that conductsa reduced voltage level T2 timing signal to second shift register 1504as first evaluation signal EVAL1. Second shift register 1504 iselectrically coupled to third timing signal line 1524 that conductstiming signal T3 to second shift register 1504 as second pre-chargesignal PRE2. Second shift register 1504 is electrically coupled tosecond evaluation signal line 1528 that conducts a reduced voltage levelT4 timing signal to second shift register 1504 as second evaluationsignal EVAL2.

Direction circuit 1510 is electrically coupled to first shift register1502 through forward direction signal line 1540 and to second shiftregister 1504 through reverse direction signal line 1542. The forwarddirection signal line 1540 conducts the forward direction signal DIRFfrom direction circuit 1510 to first shift register 1502. The reversedirection signal line 1542 conducts the reverse direction signal DIRRfrom direction circuit 1510 to second shift register 1504. Also,direction circuit 1510 is electrically coupled to control signal line1514 that conducts control signal CSYNC to direction circuit 1510. Inaddition, direction circuit 1510 receives timing pulses from timingsignals T3-T6.

Direction circuit 1510 is electrically coupled to third timing signalline 1524 that conducts timing signal T3 to direction circuit 1510 asfourth pre-charge signal PRE4. Direction circuit 1510 is electricallycoupled to second evaluation signal line 1528 that conducts the reducedvoltage T4 timing signal to direction circuit 1510 as fourth evaluationsignal EVAL4. Also, direction circuit 1510 is electrically coupled tofifth timing signal line 1544 that conducts timing signal T5 todirection circuit 1510 as third pre-charge signal PRE3. In addition,direction circuit 1510 is electrically coupled to third resistor dividenetwork 1546 through third evaluation signal line 1548. The thirdresistor divide network 1546 is electrically coupled to sixth timingsignal line 1550 that conducts timing signal T6 to third resistor dividenetwork 1546. The third resistor divide network 1546 provides a reducedvoltage T6 timing signal to direction circuit 1510 as third evaluationsignal EVAL3.

The first logic circuit 1506 is electrically coupled to shift registeroutput lines 1512 a-1512 m to receive shift register output signalsSO1-SO13 as input signals AI1-AI13, respectively. Also first logiccircuit 1506 is electrically coupled to address lines 1552 a-1552 g toprovide address signals ˜A1, ˜A2, . . . ˜A7, respectively. The secondlogic circuit 1508 is electrically coupled to shift register outputlines 1532 a-1532 m to receive shift register output signals SO1-SO13 asinput signals AI13-AI1, respectively. Also, second logic circuit 1508 iselectrically coupled to address lines 1552 a-1552 g to provide addresssignals ˜A1, ˜A2, . . . ˜A7, respectively.

The first shift register 1502 and first logic circuit 1506 provide lowvoltage level signals in address signals ˜A1, ˜A2, . . . ˜A7 to providethirteen addresses as previously described. The first shift register1502 and first logic circuit 1506 provide the thirteen addresses in aforward direction from address one to address thirteen. The second shiftregister 1504 and second logic circuit 1508 provide low voltage levelsignals in address signals ˜A1, ˜A2, . . . ˜A7 to provide the thirteenaddresses in a reverse direction from address thirteen to address one.The direction circuit 1510 conducts direction signals DIRF and DIRR thatenable either first shift register 1502 for forward direction operationor second shift register 1504 for reverse direction operation.

The timing signals T1-T6 provide a series of six pulses in a repeatingseries of six pulses. Each timing signal T1-T6 includes one pulse in theseries of six pulses and timing signals T1-T6 provide pulses in orderfrom timing signal T1 to timing signal T6.

The first shift register 1502 includes thirteen shift register cells,such as shift register cell 1400. The thirteen shift register cells 1400are electrically coupled in series with the output line 1430 of oneelectrically coupled to the input line 1411 of the next-in-line shiftregister cell 1400. The first shift register cell 1400 in the seriesreceives control signal CSYNC as input signal SI and provides outputsignal SO1. The next shift register cell 1400 receives output signal SO1as input signal SI and provides output signal SO2 and so on, through andincluding the last shift register cell 1400 that receives the previousoutput signal SO12 as input signal SI and provides output signal SO13.

First shift register 1502 is initiated by receiving a control pulse incontrol signal CSYNC coincident with a timing pulse in timing signal T2.In response, a single high voltage level signal is provided at SO1.During each subsequent series of six timing pulses, first shift register1502 shifts the single high voltage level signal to the next shiftregister cell 1400 and shift register output signal SO2-SO13. The singlehigh voltage level signal is shifted from shift register output signalSO1 to shift register output signal SO2 and so on, up to and includingshift register output signal SO13. After shift register output signalSO13 has been set to a high voltage level, all shift register outputsignals SO1-SO13 are set to low voltage levels.

The first logic circuit 1506 is similar to logic circuit 406 (shown inFIG. 9). The first logic circuit 1506 receives the single high voltagelevel signal as an input signal AI1-AI13 and provides the correspondinglow voltage level address signals in address signals ˜A1, ˜A2, . . .˜A7. In response to a high voltage level input signal AI1, first logiccircuit 1506 provides address one address signals ˜A1 and ˜A2 at lowvoltage levels. In response to a high voltage level input signal AI2,first logic circuit 1506 provides address two address signals ˜A1 and˜A3 at low voltage levels and so on, through and including a highvoltage level input signal AI13 and first logic circuit 1506 providingaddress thirteen address signals ˜A3 and ˜A5 at low voltage levels.

The second shift register 1504 is similar to first shift register 1502.The second shift register 1502 provides a single high voltage levelsignal as shift register output signal SO1 in response to beinginitiated by a control pulse coincident with a timing pulse in timingsignal T2. In response to each subsequent series of six pulses, the highvoltage level signal is shifted to the next shift register cell 1400 andshift register output signal SO2-SO13. The high voltage level signal isshifted from shift register output signal SO1 to shift register outputsignal SO2 and so on, up to and including shift register output signalSO13. After shift register output signal SO13 has been set to a highvoltage level, all shift register output signals SO1-SO13 are at lowvoltage levels.

The second logic circuit 1508 is similar to logic circuit 406 (shown inFIG. 9) and receives the high voltage level output signals SO1-SO13 asinput signals AI13-AI1. The second logic circuit 1508 provides thethirteen addresses in reverse order from address thirteen to addressone. In response to a high voltage level signal SO1, which is receivedas input signal AI13, second logic circuit 1508 provides addressthirteen low voltage level address signals ˜A3 and ˜A5. Next, inresponse to a high voltage level signal SO2, which is received as inputsignal AI12, second logic circuit 1508 provides address twelve lowvoltage level address signals ˜A3 and ˜A4 and so on, up to and includingin response to a high voltage level signal SO13, which is received asinput signal AI1, second logic circuit 1508 provides address one lowvoltage level address signals ˜A1 and ˜A2.

The direction circuit 1510 is similar to direction circuit 404 of FIG.10B. If direction circuit 1510 receives a control pulse in controlsignal CSYNC coincident with a timing pulse in timing signal T4,direction circuit 1510 provides a low voltage level direction signalDIRR and a high voltage level direction signal DIRF to shift in theforward direction, from address one to address thirteen. If directioncircuit 1510 receives a control pulse coincidence with a timing pulse intiming signal T6, direction circuit 1510 provides a low voltage leveldirection signal DIRF and a high voltage level direction signal DIRR toshift in the reverse direction, from address thirteen to address one.

Each shift register 1502 and 1504 includes a direction transistor (notshown) in the first shift register cell 1400 in the series of shiftregister cells 1400. The direction transistor is situated in series withthe input transistor 1410, similar to the series coupling of directiontransistors 512 and 514 in shift register cell 403 a illustrated in FIG.10A. The direction transistor is electrically coupled between thedrain-source path of input transistor 1410 and reference 1426. Thedirection transistor in the first shift register cell 1400 in the seriesof shift register cells 1400 operates similar to direction transistors512 and 514 in shift register cell 403 a of FIG. 10A. A high voltagelevel direction signal DIRF or DIRR turns on the direction transistor toenable the shift register 1502 or 1504 to be initiated by a controlpulse in control signal CSYNC coincident with a timing pulse in timingsignal T2. A low voltage level direction signal DIRF or DIRR turns offthe direction transistor to disable the shift register 1502 or 1504.

In forward operation, in one series of six pulses direction circuit 1510receives a control pulse in control signal CSYNC coincident with atiming pulse in timing signal T4 to provide address signals ˜A1, ˜A2, .. . ˜A7 in the forward direction. The high voltage level directionsignal DIRF enables first shift register 1502 and the low voltage leveldirection signal DIRR disables second shift register 1504.

In the next series of six pulses, a control pulse in control signalCSYNC is provided coincident with the timing pulse in timing signal T2.The control pulse coincident with the timing pulse in timing signal T2initiates first shift register 1502 by discharging internal node 1420through first evaluation transistor 1408, input transistor 1410 and thedirection transistor (not shown). Second shift register 1504 is notinitiated as it is disabled.

First shift register 1502 provides a single high voltage level outputsignal SO1 to first logic circuit 1506 that provides address one addresssignals ˜A1, ˜A2, . . . ˜A7. Each subsequent series of six pulses,shifts the high voltage level signal to the next shift register outputsignal SO2-SO13. First logic circuit 1506 receives each high voltagelevel output signal SO1-SO13 and provides the corresponding addresses,from address one to address thirteen in address signals ˜A1, ˜A2, . . .˜A7. After shift register output signal SO13 has been high, all shiftregister output signals SO1-SO13 are set to low voltage levels and alladdress signals ˜A1, ˜A2, . . . ˜A7 are set to high voltage levels.

In reverse operation, in one series of six pulses direction circuit 1510receives a control pulse in control signal CSYNC coincident with atiming pulse in timing signal T6 to provide address signals ˜A1, ˜A2, .. . ˜A7 in the reverse direction. The low voltage level direction signalDIRF disables first shift register 1502 and the high voltage leveldirection signal DIRR enables second shift register 1504.

In the next series of six pulses, a control pulse in control signalCSYNC is provided coincident with the timing pulse in timing signal T2.The control pulse coincident with the timing pulse in timing signal T2initiates second shift register 1504 by discharging internal node 1420through first evaluation transistor 1408, input transistor 1410 and thedirection transistor (not shown). First shift register 1502 is notinitiated as it is disabled.

Second shift register 1504 provides a single high voltage level outputsignal SO1 to second logic circuit 1508 that provides address thirteenaddress signals ˜A1, ˜A2, . . . ˜A7. Each subsequent series of sixpulses, shifts the high voltage level signal to the next shift registeroutput signal SO2-SO13. Second logic circuit 1508 receives each highvoltage level output signal SO1-SO13 and provides the correspondingaddresses, from address thirteen to address one in address signals ˜A1,˜A2, . . . ˜A7. After shift register output signal SO1 has been high,all shift register output signals SO1-SO13 are set to low voltage levelsand all address signals ˜A1, ˜A2, . . . ˜A7 are set to high voltagelevels.

FIG. 20 is a diagram illustrating an address generator 1600 that usesshift register cell 1400 in one shift register 1602 to provide addressesin a forward direction and a reverse direction. The address generator1600 includes shift register 1602, a forward logic circuit 1604, areverse logic circuit 1606 and a direction circuit 1608.

The shift register 1602 is electrically coupled to forward logic circuit1604 and reverse logic circuit 1606 by shift register output lines 1610a-1610 m. The shift register output lines 1610 a-1610 m provide shiftregister output signals SO1-SO13 to forward logic circuit 1604 as inputsignals AI1-AI13, respectively. The shift register output lines 1610a-1610 m provide shift register output signals SO1-SO13 to reverse logiccircuit 1606 as input signals AI13-AI1, respectively. Also, shiftregister 1602 is electrically coupled to control signal line 1612 thatprovides control signal CSYNC to shift register 1602. In addition, shiftregister 1602 receives timing pulses from timing signals T1-T4.

Shift register 1602 is electrically coupled to first timing signal line1614 that provides timing signal T1 to shift register 1602 as firstpre-charge signal PRE1. Shift register 1602 is electrically coupled tofirst resistor divide network 1616 through first evaluation signal line1618. The first resistor divide network 1616 is electrically coupled tosecond timing signal line 1620 that conducts timing signal T2 to firstresistor divide network 1616. The first resistor divide network 1616provides a reduced voltage level T2 timing signal to shift register 1602through first evaluation signal line 1618 as first evaluation signalEVAL1. Shift register 1602 is electrically coupled to third timingsignal line 1622 that provides timing signal T3 to shift register 1602as second pre-charge signal PRE2. Shift register 1602 is electricallycoupled to second resistor divide network 1624 through second evaluationsignal line 1626. The second resistor divide network 1624 iselectrically coupled to fourth timing signal line 1628 that conductstiming signal T4 to second resistor divide network 1624. The secondresistor divide network 1624 provides a reduce voltage level T4 timingsignal to shift register 1602 through second evaluation signal line 1626as second evaluation signal EVAL2.

Direction circuit 1608 is electrically coupled to forward logic circuit1604 through forward direction signal line 1630 and to reverse logiccircuit 1606 through reverse direction signal line 1632. The forwarddirection signal line 1630 provides the forward direction signal DIRFfrom direction circuit 1608 to forward logic circuit 1604. The reversedirection signal line 1632 provides the reverse direction signal DIRRfrom direction circuit 1608 to reverse logic circuit 1606. Also,direction circuit 1608 is electrically coupled to control signal line1612 that provides control signal CSYNC to direction circuit 1608. Inaddition, direction circuit 1608 receives timing pulses from timingsignal T3-T6.

Direction circuit 1608 is electrically coupled to third timing signalline 1622 to receive timing signal T3 as fourth pre-charge signal PRE4and to second evaluation signal line 1626 to receive the reduced voltageT4 timing signal as fourth evaluation signal EVAL4. Also, directioncircuit 1608 is electrically coupled to fifth timing signal line 1634that provides timing signal T5 to direction circuit 1608 as thirdpre-charge signal PRE3. In addition, direction circuit 1608 iselectrically coupled to third resistor divide network 1636 through thirdevaluation signal line 1638. The third resistor divide network 1636 iselectrically coupled to sixth timing signal line 1640 that providestiming signal T6 to third resistor divide network 1636. The thirdresistor divide network 1636 provides a reduced voltage T6 timing signalto direction circuit 1608 as third evaluation signal EVAL3.

The forward logic circuit 1604 is electrically coupled to shift registeroutput lines 1610 a-1610 m to receive shift register output signalsSO1-SO13 as input signals AI1-AI13, respectively. Also, forward logiccircuit 1604 is electrically coupled to address lines 1642 a-1642 g toprovide address signals ˜A1, ˜A2, . . . ˜A7, respectively. The reverselogic circuit 1606 is electrically coupled to shift register outputlines 1610 a-1610 m to receive shift register output signals SO1-SO13 asinput signals AI13-AI1, respectively. Also, reverse logic circuit 1606is electrically coupled to address lines 1642 a-1642 g to provideaddress signals ˜A1, ˜A2, . . . ˜A7, respectively.

The shift register 1602 and the forward and reverse logic circuits 1604and 1606 provide low voltage level signals in address signals ˜A1, ˜A2,. . . ˜A7 to provide thirteen addresses as previously described. Theshift register 1602 and forward logic circuit 1604 provide the thirteenaddresses in a forward direction from address one to address thirteen.The shift register 1602 and reverse logic circuit 1606 provide thethirteen addresses in a reverse direction from address thirteen toaddress one. The direction circuit 1608 provides direction signals DIRFand DIRR that enable either forward logic circuit 1604 for forwarddirection operation or reverse logic circuit 1606 for reverse directionoperation.

The timing signals T1-T6 provide a series of six pulses. Each timingsignal T1-T6 provides one pulse in the series of six pulses and timingsignals T1-T6 provide pulses in order from timing signal T1 to timingsignal T6.

The shift register 1602 includes thirteen shift register cells such asshift register cell 1400. The thirteen shift register cells 1400 areelectrically coupled in series with the output line 1430 of oneelectrically coupled to the input line 1411 of the next-in-line shiftregister cell 1400. The first shift register cell 1400 in the seriesreceives control signal CSYNC as input signal SI and provides outputsignal SO1. The next shift register cell 1400 receives output signal SO1as input signal SI and provides output signal SO2 and so on, through andincluding the last shift register cell 1400 that receives the previousoutput signal SO12 as input signal SI and provides output signals SO13.

Shift register 1602 is initiated by a control pulse in control signalCSYNC coincident with a timing pulse in timing signal T2. In response, asingle high voltage level signal is provided at SO1. During eachsubsequent series of six timing pulses, shift register 1602 shifts thesingle high voltage level signal to the next shift register cell 1400and shift register output signal SO1-SO13. The single high voltage levelsignal is shifted from shift register output signal SO1 to shiftregister output signal SO2 and so on, up to and including shift registeroutput signal SO13. After shift register output signal SO13 has been setto a high voltage level, all shift register output signals SO1-SO13 areset to low voltage levels.

The forward logic circuit 1604 is similar to logic circuit 406 (shown inFIG. 9). The forward logic circuit 1604 receives the single high voltagelevel signal as an input signal AI1-AI13 and provides the correspondinglow voltage level address signals in address signals ˜A1, ˜A2, . . .˜A7. In response to a high voltage level input signal AI1, forward logiccircuit 1604 provides address one address signals ˜A1 and ˜A2 at lowvoltage levels. In response to a high voltage level input signal AI2,forward logic circuit 1604 provides address two address signals ˜A1 and˜A3 at low voltage levels, and so on through and including a highvoltage level input signal AI13 and forward logic circuit 1604 providingaddress thirteen address signals ˜A3 and ˜A5 at low voltage levels.

The reverse logic circuit 1606 is similar to logic circuit 406 (shown inFIG. 9) and receives the high voltage level output signals SO1-SO13 asinput signals AI13-AI1, respectively. The reverse logic circuit 1606provides the thirteen addresses in reverse order from address thirteento address one. In response to a high voltage level signal SO1, which isreceived as input signal AI13, reverse logic circuit 1606 providesaddress thirteen address signals ˜A3 and ˜A5 at low voltage levels.Next, in response to a high voltage level signal SO2, which is receivedas input signal AI12, reverse logic circuit 1606 provides address twelveaddress signals ˜A3 and ˜A4 at low voltage levels, and so on up to andincluding in response to high voltage level SO13, which is received asinput signal AI1, reverse logic circuit 1606 provides address oneaddress signals ˜A1 and ˜A2 at low voltage levels.

The direction circuit 1608 is similar to direction circuit 404 of FIG.10B. If direction circuit 1608 receives a control pulse in controlsignal CSYNC coincident with a timing pulse in timing signal T4,direction circuit 1608 provides a low voltage level direction signalDIRR and a high voltage level direction signal DIRF to shift in theforward direction, from address one to address thirteen. If directioncircuit 1608 receives a control pulse coincident with a timing pulse intiming signal T6, direction circuit 1608 provides a low voltage leveldirection signal DIRF and a high voltage direction signal DIRR to shiftin the reverse direction from address thirteen to address one.

In one embodiment, each logic circuit 1604 and 1606 includes a directiontransistor situated in series with the logic evaluation line pre-chargetransistor 444. In each logic circuit 1604 and 1606, the drain-sourcepath of the direction transistor is electrically coupled between thedrain-source path of logic evaluation line pre-charge transistor 444 andlogic evaluation signal line 474. The gate of the direction transistorin forward logic circuit 1604 is electrically coupled to the forwarddirection line 1630 to receive the forward direction signal DIRF. Thegate of the direction transistor in reverse logic transistor 1606 iselectrically coupled to the reverse direction line 1632 to receive thereverse direction signal DIRR. In another embodiment, each logic circuit1604 and 1606 includes a direction transistor situated in series withlogic evaluation transistors 440. In each logic circuit 1604 and 1606,the drain-source path of the direction transistor is electricallycoupled between each of the drain-source paths of logic evaluationtransistors 440 and reference 478.

In one embodiment, a high voltage level direction signal DIRF turns onthe direction transistor in forward logic circuit 1604 to enable thetiming pulse in timing signal T5 to charge logic evaluation signal line474, which turns on logic evaluation transistors 440 in forward logiccircuit 1604 for providing address signals ˜A1, ˜A2, . . . ˜A7 in theforward direction. A low voltage level direction signal DIRF turns offthe direction transistor to disable forward logic circuit 1604. A highvoltage level direction signal DIRR turns on the direction transistor inreverse logic circuit 1606 to enable the timing pulse in timing signalT5 to charge logic evaluation signal line 474, which turns on logicevaluation transistors 440 in reverse logic circuit 1606 for providingaddress signals ˜A1, ˜A2, . . . ˜A7 in the reverse direction. A lowvoltage level direction signal DIRR turns off the direction transistorin reverse logic circuit 1606 to disable the reverse logic circuit 1606.

In forward operation, in one series of six pulses, direction circuit1608 receives a control pulse in control signal CSYNC coincident with atiming pulse in timing signal T4 to provide address signals ˜A1, ˜A2, .. . ˜A7 in the forward direction. The high voltage level directionsignal DIRF enables forward logic circuit 1604 and the low voltage leveldirection signal DIRR disables reverse logic circuit 1606.

In the next series of six pulses, a control pulse in control signalCSYNC is provided coincident with the timing pulse in timing signal T2.The control pulse coincident with the timing pulse in timing signal T2initiates shift register 1602. The shift register 1602 provides a singlehigh voltage level output signal SO1 to forward logic circuit 1604 thatprovides address one address signals ˜A1, ˜A2, . . . ˜A7. A controlpulse in control signal CSYNC is also provided coincident with thetiming pulse in timing signal T4 to continue providing address signals˜A1, ˜A2, . . . ˜A7 in the forward direction.

In each subsequent series of six pulses, a control pulse in controlsignal CSYNC is provided coincident with the timing pulse in timingsignal T4 to continue providing the address signals ˜A1, ˜A2, . . . ˜A7in the forward direction. Also, in each subsequent series of six pulses,shift register 1602 shifts the high voltage level signal from one shiftregister output signal SO1-SO13 to the next shift register output signalSO1-SO13. Forward logic circuit 1604 receives each high level outputsignal SO1-SO13 and provides the corresponding address, from address oneto address thirteen in address signals ˜A1, ˜A2, . . . ˜A7. After shiftregister output signal SO13 has been high, all shift register outputsignals SO1-SO13 are set to low voltage levels and all address signals˜A1, ˜A2, . . . ˜A7 are set to high voltage levels.

In reverse operation, in one series of six pulses direction circuit 1608receives a control pulse in control signal CSYNC coincident with atiming pulse in timing signal T6 to provide address signals ˜A1, ˜A2, .. . ˜A7 in the reverse direction. The low voltage level direction signalDIRF disables forward logic circuit 1604 and the high voltage leveldirection signal DIRR enables reverse logic circuit 1606.

In the next series of six pulses, a control pulse in control signalCSYNC is provided coincident with the timing pulse in timing signal T2.The control pulse coincident with the timing pulse in timing signal T2initiates shift register 1602. The shift register 1602 provides a singlehigh voltage level output signal SO1 to reverse logic circuit 1606 asinput signal AI13. The reverse logic circuit 1606 provides addressthirteen address signals ˜A1, ˜A2, . . . ˜A7. Also, a control pulse incontrol signal CSYNC is provided coincident with the timing pulse intiming signal T6 to continue providing address signals ˜A1, ˜A2, . . .˜A7 in the reverse direction.

In each subsequent series of six pulses, a control pulse in controlsignal CSYNC is provided coincident with the timing pulse in timingsignal T6 to continue providing address signals ˜A1, ˜A2, . . . ˜A7 inthe reverse direction. Also, in each subsequent series of six pulses,shift register 1602 shifts the high voltage level signal from one shiftregister output signal SO1-SO13 to the next shift register output signalSO1-SO13. Reverse logic circuit 1606 receives each high voltage leveloutput signal SO1-SO13 and provides the corresponding address fromaddress thirteen to address one in address signals ˜A1, ˜A2, . . . ˜A7.After shift register output signal SO1 has been high, all shift registeroutput signals SO1-SO13 are set to low voltage levels and all addresssignals ˜A1, ˜A2, . . . ˜A7 are set to high voltage levels.

FIG. 21 is a diagram illustrating an example layout of one embodiment ofa printhead die 1700. The printhead die 1700 includes six fire groups1702 a-1 702 f disposed along three ink fluid feed sources, heredepicted as feed slots 1704, 1706 and 1708. Fire groups 1702 a and 1702d are disposed along ink feed slot 1704, fire groups 1702 b and 1702 eare disposed along ink feed slot 1706 and fire groups 1702 c and 1702 fare disposed along ink feed slot 1708. The ink feed slots 1704, 1706 and1708 are located parallel to one another and each ink feed slot 1704,1706 and 1708 includes a length that extends along the y-direction ofprinthead die 1700. In one embodiment, each of the ink feed slots 1704,1706 and 1708 supplies a different color ink to drop generators 60 infire groups 1702 a-1702 f. In this embodiment, ink feed slot 1704supplies yellow colored ink, ink feed slot 1706 supplies magenta coloredink and ink feed slot 1708 supplies cyan colored ink. In otherembodiments, the ink feed slots 1704, 1706 and 1708 can supply anysuitably colored ink of the same or different colors.

The fire groups 1702 a-1702 f are divided into eight data line groups,indicated at D1-D8. Each data line group D1-D8 includes pre-chargedfiring cells 120 from each of the fire groups 1702 a-1702 f. Each of thepre-charged firing cells 120 in a data line group D1-D8 is electricallycoupled to one data line 208 a-208 h. Data line group D1, indicated at1710 a-1710 f, includes pre-charged firing cells 120 electricallycoupled to data line 208 a. Data line group D2, indicated at 1712 a-1712f, includes pre-charged firing cells 120 electrically coupled to dataline 208 b. Data line group D3, indicated at 1714 a-1714 f, includespre-charged firing cells 120 electrically coupled to data line 208 c.Data line group D4, indicated at 1716 a-1716 f, includes pre-chargedfiring cells 120 electrically coupled to data line 208 d. Data linegroup D5, indicated at 1718 a-1718 f, includes pre-charged firing cells120 electrically coupled to data line 208 e. Data line group D6,indicated at 1720 a-1720 f, includes pre-charged firing cells 120electrically coupled to data line 208 f. Data line group D7, indicatedat 1722 a-1722 f, includes pre-charged firing cells 120 electricallycoupled to data line 208 g, and data line group D8, indicated at 1724a-1724 f, includes pre-charged firing cells 120 electrically coupled todata line 208 h. Each of the pre-charged firing cells 120 in printheaddie 1700 is electrically coupled to only one data line 208 a-208 h. Eachdata line 208 a-208 h is electrically coupled to all of the gates of thedata transistors 136 in the pre-charged firing cells 120 of thecorresponding data line group D1-D8.

Fire group one (FG1) 1702 a is disposed along one half of the length ofink feed slot 1704. The ink feed slot 1704 includes opposing sides 1704a and 1704 b that extend along the y-direction of printhead die 1700.The pre-charged firing cells 120 in printhead die 1700 include firingresistors 52 that are part of drop generators 60. The drop generators 60in FG1 1702 a are disposed along each of the opposing sides 1704 a and1704 b of ink feed slot 1704. The drop generators 60 in FG1 1702 a arefluidically coupled to the ink feed slot 1704 to receive ink from theink feed slot 1704.

Drop generators 60 in data line groups D1, D3, D5 and D7, indicated at1710 a, 1714 a, 1718 a and 1722 a, are disposed along one side 1704 a ofink feed slot 1704 and drop generators 60 in data line groups D2, D4, D6and D8, indicated at 1712 a, 1716 a, 1720 a and 1724 a, are disposedalong the opposing side 1704 b of ink feed slot 1704. The dropgenerators 60 in data line groups D1, D3, D5 and D7 at 1710 a, 1714 a,1718 a and 1722 a are disposed between one side 1700 a of printhead die1700 and ink feed slot 1704, and drop generators 60 in data line groupsD2, D4, D6 and D8 at 1712 a, 1716 a, 1720 a and 1724 a are disposedalong an inside routing channel of printhead die 1700 between ink feedslot 1704 and ink feed slot 1706. In one embodiment, drop generators 60in data line groups D1, D3, D5 and D7 at 1710 a, 1714 a, 1718 a and 1722a are disposed along the length of one side 1704 a of ink feed slot 1704and drop generators 60 for data line groups D2, D4, D6 and D8 at 1712 a,1716 a, 1720 a and 1724 a are disposed along the opposing side 1704 b ofink feed slot 1704. The drop generators 60 in data line group D1 at 1710a are opposite drop generators 60 in data line group D2 at 1712 a. Thedrop generators 60 in data line group D3 at 1714 a are opposite dropgenerators 60 in data line group D4 at 1716 a. The drop generators 60 indata line group D5 at 1718 a are opposite drop generators 60 in dataline group D6 at 1720 a, and drop generators 60 in data line group D7 at1722 a are opposite drop generators 60 in data line group D8 at 1724 a.

Fire group four (FG4) 1702 d is disposed along the other half of thelength of ink feed slot 1704. The drop generators 60 in FG4 1702 d aredisposed along opposing sides 1704 a and 1704 b of ink feed slot 1704and fluidically coupled to ink feed slot 1704 to receive ink from inkfeed slot 1704. Drop generators 60 in data line groups D1, D3, D5 andD7, indicated at 1710 d, 1714 d, 1718 d and 1722 d, are disposed alongone side 1704 a of ink feed slot 1704 and drop generators 60 in dataline groups D2, D4, D6 and D8, indicated at 1712 d, 1716 d, 1720 d and1724 d, are disposed along the opposing side 1704 b of ink feed slot1704. The drop generators 60 in data line groups D1, D3, D5 and D7 at1710 d, 1714 d, 1718 d and 1722 d are disposed between one side 1700 aof printhead die 1700 and ink feed slot 1704, and drop generators 60 indata line groups D2, D4, D6 and D8 at 1712 d, 1716 d, 1720 d and 1724 dare disposed along an inside routing channel of printhead die 1700between ink feed slot 1704 and ink feed slot 1706. In one embodiment,drop generators 60 in data line groups D1, D3, D5 and D7 at 1710 d, 1714d, 1718 d and 1722 d are disposed along the length of one side 1704 a ofink feed slot 1704 and drop generators 60 for data line groups D2, D4,D6 and D8 at 1712 d, 1716 d, 1720 d and 1724 d are disposed along theopposing side 1704 b of ink feed slot 1704. The drop generators 60 indata line group D1 at 1710 d are opposite drop generators 60 in dataline group D2 at 1712 d. The drop generators 60 in data line group D3 at1714 d are opposite drop generators 60 in data line group D4 at 1716 d.The drop generators 60 in data line group D5 at 1718 d are opposite dropgenerators 60 in data line group D6 at 1720 d, and drop generators 60 indata line group D7 at 1722 d are opposite drop generators 60 in dataline group D8 at 1724 d.

Fire group two (FG2) 1702 b is disposed along one half of the length ofink feed slot 1706. The ink feed slot 1706 includes opposing sides 1706a and 1706 b that extend along the y-direction of printhead die 1700.The drop generators 60 in FG2 1702 b are disposed along each of theopposing sides 1706 a and 1706 b of ink feed slot 1706. The dropgenerators 60 in FG2 1702 b are fluidically coupled to the ink feed slot1706 to receive ink from ink feed slot 1706.

Drop generators 60 in data line groups D1, D3, D5 and D7, indicated at1710 b, 1714 b, 1718 b and 1722 b, are disposed along one side 1706 b ofink feed slot 1706, and drop generators 60 in data line groups D2, D4,D6 and D8, indicated at 1712 b, 1716 b, 1720 b and 1724 b, are disposedalong the opposing side 1706 a of ink feed slot 1706. The dropgenerators 60 in data line groups D1, D3, D5 and D7 at 1710 b, 1714 b,1718 b and 1722 b are disposed along an inside channel between ink feedslot 1706 and ink feed slot 1708, and drop generators 60 in data linegroups D2, D4, D6 and D8 at 1712 b, 1716 b, 1720 b and 1724 b aredisposed along an inside channel between ink feed slot 1704 and ink feedslot 1706. In one embodiment, drop generators 60 in data line groups D1,D3, D5 and D7 at 1710 b, 1714 b, 1718 b and 1722 b are disposed alongthe length of one side 1706 b of ink feed slot 1706 and drop generators60 for data line groups D2, D4, D6 and D8 at 1712 b, 1716 b, 1720 b and1724 b are disposed along the opposing side 1706 a of ink feed slot1706. The drop generators 60 in data line group D1 at 1710 b areopposite drop generators 60 in data line group D2 at 1712 b. The dropgenerators 60 in data line group D3 at 1714 b are opposite dropgenerators 60 in data line group D4 at 1716 b. The drop generators 60 indata line group D5 at 1718 b are opposite drop generators 60 in dataline group D6 at 1720 b, and drop generators 60 in data line group D7 at1722 b are opposite drop generators 60 in data line group D8 at 1724 b.

Fire group five (FG5) 1702 e is disposed along the other half of thelength of ink feed slot 1706. The drop generators 60 in FG5 1702 e aredisposed along opposing sides 1706 a and 1706 b of ink feed slot 1706and fluidically coupled to ink feed slot 1706 to receive ink from inkfeed slot 1706. Drop generators 60 in data line groups D1, D3, D5 andD7, indicated at 1710 e, 1714 e, 1718 e and 1722 e, are disposed alongone side 1706 b of ink feed slot 1706 and drop generators 60 in dataline groups D2, D4, D6 and D8, indicated at 1712 e, 1716 e, 1720 e and1724 e, are disposed along the opposing side 1706 a of ink feed slot1706. The drop generators 60 in data line groups D1, D3, D5 and D7 at1710 e, 1714 e, 1718 e and 1722 e are disposed along an inside channelbetween ink feed slot 1706 and ink feed slot 1708, and drop generators60 in data line groups D2, D4, D6 and D8 at 1712 e, 1716 e, 1720 e and1724 e are disposed along an inside channel of printhead die 1700between ink feed slot 1704 and ink feed slot 1706. In one embodiment,drop generators 60 in data line groups D1, D3, D5 and D7 at 1710 e, 1714e, 1718 e and 1722 e are disposed along the length of one side 1706 b ofink feed slot 1706 and drop generators 60 for data line groups D2, D4,D6 and D8 at 1712 e, 1716 e, 1720 e and 1724 e are disposed along theopposing side 1706 a of ink feed slot 1706. The drop generators 60 indata line group D1 at 1710 e are opposite drop generators 60 in dataline group D2 at 1712 e. The drop generators 60 in data line group D3 at1714 e are opposite drop generators 60 in data line group D4 at 1716 e.The drop generators 60 in data line group D5 at 1718 e are opposite dropgenerators 60 in data line group D6 at 1720 e, and drop generators 60 indata line group D7 at 1722 e are opposite drop generators 60 in dataline group D8 at 1724 e.

Fire group three (FG3) 1702 c is disposed along one half of the lengthof ink feed slot 1708. Ink feed slot 1708 includes opposing sides 1708 aand 1708 b that extend along the y-direction of printhead die 1700. Thedrop generators 60 in FG3 1702 c are disposed along each of the opposingsides 1708 a and 1708 b of ink feed slot 1708. The drop generators 60 inFG3 1702 c are fluidically coupled to the ink feed slot 1708 to receiveink from ink feed slot 1708.

Drop generators 60 in data line groups D1, D3, D5 and D7, indicated at1710 c, 1714 c, 1718 c and 1722 c, are disposed along one side 1708 a ofink feed slot 1708, and drop generators 60 in data line groups D2, D4,D6 and D8, indicated at 1712 c, 1716 c, 1720 c and 1724 c, are disposedalong the opposing side 1708 b of ink feed slot 1708. The dropgenerators 60 in data line groups D1, D3, D5 and D7 at 1710 c, 1714 c,1718 c and 1722 c are disposed along an inside channel between ink feedslot 1706 and ink feed slot 1708, and drop generators 60 in data linegroups D2, D4, D6 and D8 at 1712 c, 1716 c, 1720 c and 1724 c aredisposed between one side 1700 b of printhead die 1700 and ink feed slot1708. In one embodiment, drop generators 60 in data line groups D1, D3,D5 and D7 at 1710 c, 1714 c, 1718 c and 1722 c are disposed along thelength of one side 1708 a of ink feed slot 1708 and drop generators 60for data line groups D2, D4, D6 and D8 at 1712 c, 1716 c, 1720 c and1724 c are disposed along the opposing side 1708 b of ink feed slot1708. The drop generators 60 in data line group D1 at 1710 c areopposite drop generators 60 in data line group D2 at 1712 c. The dropgenerators 60 in data line group D3 at 1714 c are opposite dropgenerators 60 in data line group D4 at 1716 c. The drop generators 60 indata line group D5 at 1718 c are opposite drop generators 60 in dataline group D6 at 1720 c, and drop generators 60 in data line group D7 at1722 c are opposite drop generators 60 in data line group D8 at 1724 c.

Fire group six (FG6) 1702 f is disposed along the other half of thelength of ink feed slot 1708. The drop generators 60 in FG6 1702 f aredisposed along opposing sides 1708 a and 1708 b of ink feed slot 1708and fluidically coupled to ink feed slot 1708 to receive ink from inkfeed slot 1708. Drop generators 60 in data line groups D1, D3, D5 andD7, indicated at 1710 f, 1714 f, 1718 f and 1722 f, are disposed alongone side 1708 a of ink feed slot 1708 and drop generators 60 in dataline groups D2, D4, D6 and D8, indicated at 1712 f, 1716 f, 1720 f and1724 f, are disposed along the opposing side 1708 b of ink feed slot1708. The drop generators 60 in data line groups D1, D3, D5 and D7 at1710 f, 1714 f, 1718 f and 1722 f are disposed along an inside channelbetween ink feed slot 1706 and ink feed slot 1708, and drop generators60 in data line groups D2, D4, D6 and D8 at 1712 f, 1716 f, 1720 f and1724 f are disposed between one side 1700 b of printhead die 1700 andink feed slot 1708. In one embodiment, drop generators 60 in data linegroups D1, D3, D5 and D7 at 1710 f, 1714 f, 1718 f and 1722 f aredisposed along the length of one side 1708 a of ink feed slot 1708 anddrop generators 60 for data line groups D2, D4, D6 and D8 at 1712 f,1716 f, 1720 f and 1724 f are disposed along the opposing side 1708 b ofink feed slot 1708. The drop generators 60 in data line group D1 at 1710f are opposite drop generators 60 in data line group D2 at 1712 f. Thedrop generators 60 in data line group D3 at 1714 f are opposite dropgenerators 60 in data line group D4 at 1716 f. The drop generators 60 indata line group D5 at 1718 f are opposite drop generators 60 in dataline group D6 at 1720 f, and drop generators 60 in data line group D7 at1722 f are opposite drop generators 60 in data line group D8 at 1724 f.

Drop generators 60 between ink feed slot 1704 and one side 1700 a ofprinthead die 1700 are in data line groups D1 at 1710 a and 1710 d, D3at 1714 a and 1714 d, D5 at 1718 a and 1718 d and D7 at 1722 a and 1722d. Drop generators 60 between ink feed slot 1708 and the other side 1700b of printhead die 1700 are in data line groups D2 at 1712 c and 1712 f,D4 at 1716 c and 1716 f, D6 at 1720 c and 1720 f and D8 at 1724 c and1724 f. Thus, four data lines 208 a, 208 c, 208 e and 208 g are routedbetween ink feed slot 1704 and one side 1700 a of printhead die 1700, asopposed to routing all eight data lines 208 a-208 h. Also, four datalines 208 b, 208 d, 208 f and 208 h are routed between ink feed slot1708 and the other side 1700 b of printhead die 1700, as opposed torouting all eight data lines 208 a-208 h.

In addition, drop generators 60 between ink feed slots 1704 and 1706 arein data line groups D2 at 1712 a, 1712 b, 1712 d and 1712 e, D4 at 1716a, 1716 b, 1716 d and 1716 e, D6 at 1720 a, 1720 b, 1720 d and 1720 e,and D8 at 1724 a, 1724 b, 1724 d and 1724 e. Also, drop generators 60between ink feed slots 1706 and 1708 are in data line groups D1 at 1710b, 1710 c, 1710 e and 1710 f, D3 at 1714 b, 1714 c, 1714 e and 1714 f,D5 at 1718 b, 1718 c, 1718 e and 1718 f, and D7 at 1722 b, 1722 c, 1722e and 1722 f. Thus, four data lines 208 b, 208 d, 208 f and 208 h arerouted between ink feed slots 1704 and 1706 and four data lines 208 a,208 c, 208 e and 208 g are routed between ink feed slots 1706 and 1708,as opposed to routing all eight data lines 208 a-208 h between the inkfeed slots 1704 and 1706, and ink feed slots 1706 and 1708. The size ofprinthead die 1700 is reduced by routing four data lines instead ofeight data lines 208 a-208 h.

In one embodiment, printhead die 1700 includes 600 drop generators 60.Each of the six fire groups 1702 a-1702 f includes 100 drop generators60. Six data line groups in each of the fire groups 1702 a-1702 finclude 13 drop generators 60 and two of the data line groups in each ofthe fire groups 1702 a-1702 f include 11 drop generators 60. In otherembodiments, printhead die 1700 can include any suitable number of dropgenerators 60, such as 400 drop generators 60 or more than 600 dropgenerators 60. In addition, printhead die 1700 can include any suitablenumber of fire groups, data line groups and drop generators 60 in eachfire group and data line group. Further, the printhead die may include afewer or greater number of fluid feed sources.

FIG. 22 is a diagram illustrating another aspect of the example layoutof one embodiment of printhead die 1700. The printhead die 1700 includesdata lines 208 a-208 h, fire lines 214 a-214 f, ink feed sources, e.g.ink feed slots 1704, 1706 and 1708 and the six fire groups 1702 a-1702f. In addition, printhead die 1700 includes address generators 1800 aand 1800 b and two sets of address lines 1806 a-1806 g and 1808 a-1808g. Address generator 1800 a is electrically coupled to address lines1806 a-1806 g, and address generator 1800 b is electrically coupled toaddress lines 1808 a-1808 g. Address lines 1806 a-1806 g areelectrically coupled to pre-charged firing cells 120 in row subgroups infire groups 1702 a-1702 c, and address lines 1808 a-1808 g areelectrically coupled to pre-charged firing cells 120 in row subgroups infire groups 1702 d-1702 f. The address lines 1806 a-1806 g and 1808a-1808 g are electrically coupled to pre-charged firing cells 120 in rowsubgroups as previously described for address lines 206 a-206 g,respectively.

The address generators 1800 a and 1800 b are similar to addressgenerators 1000 and 1002 illustrated in FIG. 13. Accordingly, suitableembodiments of address generators 1800 a and 1800 b can be implementedas illustrated in FIGS. 9-12.

The address generators 1800 a and 1800 b supply address signals ˜A1, ˜A2. . . ˜A7 and ˜B1, ˜B2 . . . ˜B7 to fire groups 1702 a-1702 f throughaddress lines 1806 a-1806 g and 1808 a-1808 g. Address generator 1800 asupplies address signals ˜A1, . . . ˜A2 . . . ˜A7 to fire groups 1702a-1702 c through address lines 1806 a-1806 g. Address generator 1800 bsupplies address signals ˜B1, ˜B2 . . . ˜B7 to fire groups 1702 d-1702 fthrough address lines 1808 a-1808 g. The address signals ˜A1, ˜A2 . . .˜A7 are supplied by address generator 1800 a to fire groups 1702 a-1702c as the select signals SEL1, SEL2 and SEL3 are provided on select lines212 a-212 c. The address signals ˜B1, ˜B2 . . . ˜B7 are supplied byaddress generator 1800 b to fire groups 1702 d-1702 f as the selectsignals SEL4, SEL5 and SEL6 are provided on select lines 212 d-212 f. Inone cycle through fire groups 1702 a-1702 f, address generator 1800 asupplies address signals ˜A1, ˜A2 . . . ˜A7 to half the fire groups 1702a-1702 c and address generator 1800 b supplies address signals ˜B1, ˜B2. . . ˜B7 to the other half of the fire groups 1702 d-1702 f. In oneembodiment, the address generators 1800 a and 1800 b are synchronized toprovide the same address on address lines 1806 a-1806 g and 1808 a-1808g during one cycle through fire groups 1702 a-1702 f. After each cyclethrough fire groups 1702 a-1702 f, the address generators 1800 a and1800 b change address signals ˜A1, ˜A2 . . . ˜A7 and ˜B1, ˜B2 . . . ˜B7to address the next sequential row subgroup in the sequence of thirteenrow subgroups.

The address generators 1800 a and 1800 b are located in opposite cornersof printhead die 1700. Address generator 1800 a is located in the cornerbounded by printhead die sides 1700 b and 1700 c. Address generator 1800b is located in the corner bounded by printhead die sides 1700 a and1700 d.

The seven address lines 1806 a-1806 g are routed between ink feed slot1708 and printhead die side 1700 b, and along printhead die side 1700 cto between ink feed slot 1704 and printhead die side 1700 a. Inaddition, address lines 1806 a-1806 g are routed between ink feed slots1704 and 1706, and between ink feed slots 1706 and 1708. The addresslines 1806 a-1806 g are routed along one half of the length of ink feedslots 1704, 1706 and 1708 to electrically couple with pre-charged firingcells 120 in fire groups 1702 a-1702 c. The layout of address generators1800 a and 1800 b may vary, and may be utilized to increase thefrequency of operation by reducing the length of the signal paths to thepre-charged firing cells 120.

The seven address lines 1808 a-1808 g are routed between ink feed slot1704 and printhead die side 1700 a, and along printhead die side 1700 dto between ink feed slot 1708 and printhead die side 1700 b. Inaddition, address lines 1808 a-1808 g are routed between ink feed slots1704 and 1706, and between ink feed slots 1706 and 1708. The addresslines 1808 a-1808 g are routed along the other half of the length of inkfeed slots 1704, 1706 and 1708 to electrically couple with pre-chargedfiring cells 120 in fire groups 1702 d-1702 f.

Data lines 208 a, 208 c, 208 e and 208 g are routed between printheaddie side 1700 a and ink feed slot 1704 and between ink feed slots 1706and 1708. Each of the data lines 208 a, 208 c, 208 e and 208 g that arerouted between printhead die side 1700 a and ink feed slot 1704 iselectrically coupled to pre-charged firing cells 120 in two fire groups1702 a and 1702 d. Each of the data lines 208 a, 208 c, 208 e and 208 gthat are routed between ink feed slots 1706 and 1708 is electricallycoupled to pre-charged firing cells 120 in four fire groups 1702 b, 1702c, 1702 e and 1702 f. Data line 208 a is electrically coupled topre-charged firing cells 120 in data line group D1 at 1710 to providedata signal ˜D1. Data line 208 c is electrically coupled to pre-chargedfiring cells 120 in data line group D3 at 1714 to provide data signal˜D3. Data line 208 e is electrically coupled to pre-charged firing cells120 in data line group D5 at 1718 to provide data signal ˜D5, and dataline 208 g is electrically coupled to pre-charged firing cells 120 indata line group D7 at 1722 to provide data signal ˜D7. The data lines208 a, 208 c, 208 e and 208 g receive data signals ˜D1, ˜D3, ˜D5 and ˜D7and provide the data signals ˜D1, ˜D3, ˜D5 and ˜D7 to pre-charged firingcells 120 in each of the fire groups 1702 a-1702 f. In one embodiment,data lines 208 a, 208 c, 208 e and 208 g are not routed the entirelength of ink feed slots 1704, 1706 and 1708. Instead, each of the datalines 208 a, 208 c, 208 e and 208 g is routed to its respective dataline group from a bond pad located along the side of printhead die 1700nearest the data line group in the fire groups 1702 a-1702 f. Data lines208 a and 208 c are electrically coupled to a bond pad along side 1700 cof printhead die 1700, and data lines 208 e and 208 g are electricallycoupled to a bond pad along side 1700 d of printhead die 1700.

Data lines 208 b, 208 d, 208 f and 208 h are routed between ink feedslots 1704 and 1706 and between ink feed slot 1708 and printhead dieside 1700 b. Each of the data lines 208 b, 208 d, 208 f and 208 h thatare routed between ink feed slots 1704 and 1706 is electrically coupledto pre-charged firing cells 120 in four fire groups 1702 a, 1702 b, 1702d and 1702 e. Each of the data lines 208 b, 208 d, 208 f and 208 h thatare routed between ink feed slot 1708 and printhead die side 1700 b iselectrically coupled to pre-charged firing cells 120 in two fire groups1702 c and 1702 f. Data line 208 b is electrically coupled topre-charged firing cells 120 in data line group D2 at 1712 to providedata signal ˜D2. Data line 208 d is electrically coupled to pre-chargedfiring cells 120 in data line group D4 at 1716 to provide data signal˜D4. Data line 208 f is electrically coupled to pre-charged firing cells120 in data line group D6 at 1720 to provide data signal ˜D6, and dataline 208 h is electrically coupled to pre-charged firing cells 120 indata line group D8 at 1724 to provide data signal ˜D8. The data lines208 b, 208 d, 208 f and 208 h receive data signals ˜D2, ˜D4, ˜D6 and ˜D8and provide the data signals ˜D2, ˜D4, ˜D6 and ˜D8 to pre-charged firingcells 120 in each of the fire groups 1702 a-1702 f. In one embodiment,the data lines 208 b, 208 d, 208 f and 208 h are not routed the entirelength of ink feed slots 1704, 1706 and 1708. Instead, each of the datalines 208 b, 208 d, 208 f and 208 h is routed to its respective dataline group from a bond pad located along the side of printhead die 1700nearest the data line group in fire groups 1702 a-1702 f. Data line 208b and 208 d are electrically coupled to a bond pad along side 1700 c ofprinthead die 1700, and data lines 208 f and 208 h are electricallycoupled to a bond pad along side 1700 d of printhead die 1700.

The conductive fire lines 214 a-214 f are located along ink feed slots1704, 1706 and 1708 to supply energy signals FIRE1, FIRE2 . . . FIRE6 tothe fire groups 1702 a-1702 f, respectively. The fire lines 214 a-214 fsupply energy to firing resistors 52 in conducting pre-charged firingcells 120 to heat and eject ink from drop generators 60. To uniformlyeject ink from each drop generator 60 in a fire group 1702 a-1702 f, thecorresponding fire line 214 a-214 f is configured to uniformly supplyenergy to each firing resistor 52 in the fire group 1702 a-1702 f.

Energy variation is the maximum percent difference in power dissipatedthrough any two firing resistors 52 in one of the fire groups 1702a-1702 f. The highest amount of power is found in the first firingresistor 52 of a fire group 1702 a-1702 f, the firing resistor 52nearest the bond pad receiving the energy signal FIRE1, FIRE2 . . .FIRE6, as only a single firing resistor 52 is energized. The lowestamount of power is found in the last firing resistor 52 of a fire group1702 a-1702 f as all firing resistors 52 in a row subgroup areenergized. Layout contributions to energy variation include fire linewidth, ground line width, metal thickness and the length of the fireline 214 a-214 f. Energy variations of 10 to 15 percent are preferredand energy variations up to 20 percent have been found to be suitableenergy variations.

Fire groups 1702 a-1702 f and fire lines 214 a-214 f are laid out alongink feed slots 1704, 1706 and 1708 to achieve a suitable energyvariation. The pre-charged firing cells 120 in a fire group 1702 a-1702f are located along opposing sides of an ink feed slot 1704, 1706 or1708. Instead of having all pre-charged firing cells 120 in a fire group1702 a-1702 f along the entire length of one side of an ink feed slot1704, 1706 or 1708, the pre-charged firing cells 120 in a fire group1702 a-1702 f are located along half of the length of each of theopposing sides of an ink feed slot 1704, 1706 or 1708. The length of thecorresponding fire line 214 a-214 f is reduced to half the length of anink feed slot 1704, 1706 or 1708 from one end of the ink feed slot 1704,1706 and 1708, as compared to the entire length of an ink feed slot1704, 1706 and 1708. Each of the fire lines 214 a-214 f are disposed onboth sides of an ink feed slot 1704, 1706 or 1708 and electricallycoupled at one end of the ink feed slot 1704, 1706 or 1708 to form asubstantially U-shaped fire line 214 a-214 f. The substantially U-shapedfire lines 214 a-214 f are effectively half the length of a fire linethat extends the entire length of an ink feed slot 1704, 1706 and 1708.The table below compares energy variation for substantially U-shapedfire lines 214 a-214 f with that of linear fire lines, that is, firelines that run the entire length of one side of an ink feed slot 1704,1706 and 1708.

Fire Gnd Fire group line line Metal % Row shape width width Die widththickness evar A Substantially 250 um 115 um 4200 um 360 nm 11% U-shapedB Linear 250 um 115 um 4200 um 360 nm 52% C Linear 250 um 115 um 4200 um1440 nm  36% (4x thick) D Linear 750 um 615 um ~7200 um 360 nm 11% ELinear 515 um 380 um ~5790 um 1140 nm  11% (4x thick)

As shown in the table, using a linear fire group with the same fireline, ground line and die width results in a larger and unsuitableenergy variation (11 percent verses 52 percent). The energy variationdifference is improved slightly by increasing metal thickness by fourtimes to reduce fire line resistance. However, the energy variation isstill unsuitable (11 percent verses 36 percent). Alternatively, toreduce the energy variation to 11 percent in a linear fire grouparrangement, the die width is increased.

The substantially U-shaped fire lines 214 a-214 f are electricallycoupled to pre-charged firing cells 120 located along each of theopposing sides of ink feed slots 1704, 1706 and 1708. Fire line 214 a iselectrically coupled to each of the pre-charged firing cells 120 in FG1at 1702 a. The fire line 214 a is disposed along each of the opposingsides of ink feed slot 1704 and extends from one end of ink feed slot1704 to half the length of ink feed slot 1704 in the y-direction. Thefire line 214 a supplies energy signal FIRE1 and energy pulses to FG1 at1702 a.

Fire line 214 b is electrically coupled to each of the pre-chargedfiring cells 120 in FG2 at 1702 b. The fire line 214 b is disposed alongeach of the opposing sides of ink feed slot 1706 and extends from oneend of ink feed slot 1706 to half the length of ink feed slot 1706 inthe y-direction. The fire line 214 b supplies energy signal FIRE2 andenergy pulses to FG2 at 1702 b.

Fire line 214 c is electrically coupled to each of the pre-chargedfiring cells 120 in FG3 at 1702 c. The fire line 214 c is disposed alongeach of the opposing sides of ink feed slot 1708 and extends from oneend of ink feed slot 1708 to half the length of ink feed slot 1708 inthe y-direction. The fire line 214 c supplies the energy signal FIRE3and energy pulses to FG3 at 1702 c.

Fire line 214 d is electrically coupled to each of the pre-chargedfiring cells 120 in FG4 at 1702 d. The fire line 214 d is disposed alongeach of the opposing sides of ink feed slot 1704 and extends from oneend of ink feed slot 1704 to half the length of ink feed slot 1704 inthe y-direction. The fire line 214 d supplies the energy signal FIRE4and energy pulses to FG4 at 1702 d.

Fire line 214 e is electrically coupled to each of the pre-chargedfiring cells 120 in FG5 at 1702 e. The fire line 214 e is disposed alongeach of the opposing sides of ink feed slot 1706 and extends from oneend of ink feed slot 1706 to half the length of ink feed slot 1706 inthe y-direction. The fire line 214 e supplies the energy signal FIRE5and energy pulses to FG5 at 1702 e.

Fire line 214 f is electrically coupled to each of the pre-chargedfiring cells 120 in FG6 at 1702 f. The fire line 214 f is disposed alongeach of the opposing sides of ink feed slot 1708 and extends from oneend of ink feed slot 1708 to half the length of ink feed slot 1708 inthe y-direction. The fire line 214 f supplies the energy signal FIRE6and energy pulses to FG6 at 1702 f.

FIG. 23 is a diagram illustrating a plan view of a section 1820 of oneembodiment of printhead die 1700. The section 1820 is located in thechannel between ink feed slots 1704 and 1706, and adjacent data linegroups D6 at 1720 a and 1720 b. The section 1820 includes address lines1806 a-1806 g, fire lines 214 a and 214 b and data lines 208 b, 208 d,208 f and 208 h. In addition, section 1820 includes cross-connectionlines 1822 a-1822 c. The address lines 1806 a-1806 g, data lines 208 b,208 d, 208 f and 208 h and fire lines 214 a and 214 b are disposedparallel to each other and parallel to the length of ink feed slots 1704and 1706. The cross-connection lines 1822 a-1822 c are disposedorthogonal to ink feed slots 1704 and 1706.

The address lines 1806 a-1806 g and data lines 208 b, 208 d, 208 f and208 h are conductive lines formed as part of first layer metal. The firelines 214 a and 214 b are conductive lines formed as part of secondlayer metal and cross-connection lines 1822 a-1822 c are formed as partof polysilicon. The polysilicon layer is insulated from the first layermetal by a first insulating layer. The first layer metal is separatedand insulated from the second layer metal by a second insulating layer.

The address lines 1806 a-1806 g are disposed between fire lines 214 aand 214 b, such that address lines 1806 a-1806 g and fire lines 214 aand 214 b do not overlap. Overlapping substantially all of address lines1806 a-1806 g and fire lines 214 a and 214 b along the length of inkfeed slots 1704 and 1706 is minimized to reduce cross-talk between firelines 214 a and 214 b and address lines 1806 a-1806 g, as compared tothe cross-talk between overlapping fire lines 214 a and 214 b andaddress lines 1806 a-1806 g. The data lines 208 b, 208 d, 208 f and 208h and fire lines 214 a and 214 b overlap along the length of ink feedslots 1704 and 1706.

The address lines 1806 a-1806 g receive address signals ˜A1, ˜A2, . . .˜A7 from onboard address generator 1800 a and data lines 208 b, 208 d,208 f and 208 h receive data signals ˜D2, ˜D4, ˜D6 and ˜D8 from externalcircuitry. The cross-connection lines 1822 a-1822 c are electricallycoupled to selected data lines 208 b, 208 d, 208 f and 208 h or selectedaddress lines 1806 a-1806 g through vias between the polysilicon layerand first layer metal. The cross-connection lines 1822 a-1822 c receiveand supply signals across the channel between ink feed slots 1704 and1706, to the individual pre-charged firing cells 120. The fire lines 214a and 214 b receive fire signals FIRE1 and FIRE2 from externalcircuitry.

The routing scheme in section 1820 is used between ink feed slots 1704and 1706, between ink feed slots 1706 and 1708, between ink feed slot1704 and one side 1700 a of printhead die 1700, and between ink feedslot 1708 and the other side 1700 b of printhead die 1700.

FIG. 24 is a diagram illustrating an example layout of one embodiment ofa printhead die 1900. The printhead die 1900 includes components thatare similar to components in printhead die 1700 and similar numbers areused for similar components. The printhead die 1900 includes data lines208 a-208 h, fire lines 214 a-214 f, ink feed slots 1704, 1706 and 1708,and the six fire groups, indicated at 1702 a-1702 f. In addition,printhead die 1900 includes address generator 1902, address latch 1904,address lines 1908 a-1908 g and latched address lines 1910 a-1910 g.Address generator 1902 is electrically coupled to address lines 1908a-1908 g and address latch 1904 is electrically coupled to latchedaddress lines 1910 a-1910 g. In addition, address generator 1902 iselectrically coupled to address latch 1904 through interconnect lines1906 a-1906 g.

One embodiment of address generator 1902 is similar to address generator1200 shown in FIG. 15. Accordingly, a suitable embodiment of addressgenerator 1902 can be implemented as illustrated in FIGS. 9-12.

Address latch 1904 is one embodiment of an address generator and may beutilized in lieu of a second address generator on printhead die 1900.While address generator 1902 generates addresses based on all externalsignals (e.g., CSYNC and Timing Signals T1-T6), address latch 1904generates addresses based on a received internal address provided byaddress generator 1902 and on external timing signals. A suitableembodiment of address latch 1904 is similar to latch circuit 1202, shownin FIG. 15, which includes seven latch registers, such as latch register1220, illustrated in FIGS. 16 and 17.

Address lines 1908 a-1908 g are electrically coupled to pre-chargedfiring cells 120 in fire groups 1702 a, 1702 b and a first part of firegroup 1702 c. Latched address lines 1910 a-1910 g are electricallycoupled to pre-charged firing cells 120 in fire groups 1702 d-1702 f anda second part of fire group 1702 c. The first part of fire group 1702 cis disposed between ink feed slot 1706 and ink feed slot 1708 andincludes data line groups D1, D3, D5 and D7 at 1710 c, 1714 c, 1718 cand 1722 c. The second part of fire group 1702 c is disposed between inkfeed slot 1708 and printhead die side 1900 b and includes data linegroups D2, D4, D6 and D8 at 1712 c, 1716 c, 1720 c and 1724 c. The firstpart of fire group 1702 c includes half of the pre-charged firing cells120 in fire group 1702 c and the second part of fire group 1702 cincludes the other half of the pre-charged firing cells 120 in firegroup 1702 c. The address lines 1908 a-1908 g and latched address lines1910 a-1910 g are electrically coupled to row subgroups as previouslydescribed for address lines 206 a-206 g, respectfully. That is, addressline 1908 a/1910 a is electrically coupled to row subgroups as addressline 206 a is coupled to row subgroups, address line 1908 b/1910 b iselectrically coupled to row subgroups as address line 206 b is coupledto row subgroups and so on, up to and including address line 1908 g/1910g being electrically coupled to row subgroups as address line 206 g iscoupled to row subgroups.

The address generator 1902 supplies address signals ˜A1, ˜A2, . . . ˜A7to address latch 1904 and to fire groups 1702 a, 1702 b and the firstpart of fire group 1702 c. Address generator 1902 supplies addresssignals ˜A1, ˜A2, . . . ˜A7 to address latch 1904 through interconnectlines 1906 a-1906 g and to fire groups 1702 a, 1702 b and the first partof fire group 1702 c through address lines 1908 a-1908 g. Address signal˜A1 is supplied on interconnect line 1906 a and address line 1908 a,address signal ˜A2 is supplied on interconnect line 1906 b and addressline 1908 b and so on, up to and including address signal ˜A7 that issupplied on interconnect line 1906 g and address line 1908 g.

The address latch 1904 receives address signals ˜A1, ˜A2, . . . ˜A7 andsupplies latched address signals ˜B1, ˜B2, . . . ˜B7 to fire groups 1702d-1702 f and the second part of fire group 1702 c. The address latch1904 receives address signals ˜A1, ˜A2, . . . ˜A7 on interconnect lines1906 a-1906 g. The received signals ˜A1, ˜A2, . . . ˜A7 are latched intoaddress latch 1904, which supplies corresponding latched address signals˜B1, ˜B2, . . . ˜B7. The latched address signals ˜B1, ˜B2, . . . ˜B7 aresupplied to fire groups 1702 d-1702 f and the second part of fire group1702 c through latched address lines 1910 a-1910 g.

The address latch 1904 receives address signal ˜A1 on interconnect line1906 a and latches in address signal ˜A1 to supply latched addresssignal ˜B1 on latched address line 1910 a. Address latch 1904 receivesaddress signal ˜A2 on interconnect line 1906 b and latches in theaddress signal ˜A2 to supply latched address signal ˜B2 on latchedaddress line 1910 b, and so on, up to address latch 1904 receivingaddress signal ˜A7 on interconnect line 1906 g and latching in addresssignal ˜A7 to supply latched address signal ˜B7 on latched address line1910 g.

The address generator 1902 supplies valid address signals ˜A1, ˜A2, . .. ˜A7 for three time periods. During these three time periods, selectsignals SEL1, SEL2 and SEL3 are supplied to fire groups 1702 a-1702 c,respectively, one select signal SEL1, SEL2 or SEL3 per time period. Theaddress latch 1904 latches in valid address signals ˜A1, ˜A2, . . . ˜A7as select signal SEL1 is supplied to fire group 1702 a. The outputs ofthe address latch 1904 settle to valid latched address signals ˜B1, ˜B2,. . . ˜B7 as select signal SEL2 is supplied to fire group 1702 b. Validaddress signals ˜A1, ˜A2, . . . ˜A7 and valid latched address signals˜B1, ˜B2, . . . ˜B7 are supplied to fire group 1702 c as select signalSEL3 is supplied to fire group 1702 c. The address latch 1904 suppliesvalid latched address signals ˜B1, ˜B2, . . . ˜B7 for four time periods.During these four time periods, select signals SEL3, SEL4, SEL5 and SEL6are supplied to fire groups 1702 c-1702 f, respectively, one selectsignal SEL3, SEL4, SEL5 or SEL6 per time period.

The address generator 1902 changes address signals ˜A1, ˜A2, . . . ˜A7to address the next row subgroup of the thirteen row subgroups after thetime period including select signal SEL3. The new address signals ˜A1,˜A2, . . . ˜A7 are valid before the beginning of the next cycle and thetime period including select signal SEL1. The address latch 1904 latchesin the new address signals ˜A1, ˜A2, . . . ˜A7 after the time periodincluding select signal SEL6. The latched address signals ˜B1, ˜B2, . .. ˜B7 are valid during the next cycle before the time period includingselect signal SEL3.

In one cycle through fire groups 1702 a-1702 f, address generator 1902supplies address signals ˜A1, ˜A2, . . . ˜A7 to fire groups 1702 a, 1702b and the first part of 1702 c as select signals SEL1, SEL2 and SEL3 aresupplied to fire groups 1702 a, 1702 b and 1702 c. Also, latched addresssignals ˜B1, ˜B2, . . . ˜B7 are supplied to the second part of firegroup 1702 c and fire groups 1702 d-1702 f as select signals SEL3, SEL4,SEL5 and SEL6 are supplied to fire groups 1702 c-1702 f. The addressgenerator 1902 and address latch 1904 supply the same address on addresslines 1908 a-1908 g and latched address lines 1910 a-1910 g during onecycle through fire groups 1702 a-1702 f.

The address generator 1902 is disposed adjacent address latch 1904 inone corner of printhead die 1900 bounded by printhead die side 1900 band printhead die side 1900 c. With address generator 1902 and addresslatch 1904 adjacent one another, the reliability of passing addresssignals ˜A1, ˜A2, . . . ˜A7 from address generator 1902 to address latch1904 is improved as compared to passing address signals ˜A1, ˜A2, . . .˜A7 through longer interconnect lines 1906 a-1906 g.

In other embodiments, address generator 1902 and address latch 1904 canbe disposed in different locations on printhead die 1900. In oneembodiment, address generator 1902 can be disposed in the corner ofprinthead die 1900 bounded by printhead die side 1900 b and printheaddie side 1900 c, and address latch 1904 can be disposed between firegroups 1702 c and 1702 f along printhead die side 1900 b. In thisembodiment, interconnect lines 1906 a-1906 g are used to supply addresssignals ˜A1, ˜A2, . . . ˜A7 to the second part of fire group 1702 cbetween ink feed slot 1708 and printhead die side 1900 b. The addressgenerator 1902 supplies address signals ˜A1, ˜A2, . . . ˜A7 to threefire groups 1702 a-1702 c and address latch 1904 supplies latchedaddress signals ˜B1, ˜B2, . . . ˜B7 to three fire groups 1702 d-1702 f.

In the example embodiment, the seven address lines 1908 a-1908 g arerouted along printhead die side 1900 c to between ink feed slot 1704 andprinthead die side 1900 a. In addition, address lines 1908 a-1908 g arerouted between ink feed slots 1704 and 1706, and between ink feed slots1706 and 1708. The address lines 1908 a-1908 g are routed along one halfof the length of ink feed slots 1704, 1706 and 1708 to electricallycouple with pre-charged firing cells 120 in fire groups 1702 a, 1702 band the first part of fire group 1702 c.

The seven latched address lines 1910 a-1910 g are routed along theentire length of ink feed slot 1708 between ink feed slot 1708 andprinthead die side 1900 b. The latched address lines 1910 a-1910 g arealso routed along printhead die side 1900 d to between ink feed slot1704 and printhead die side 1900 a. In addition, address lines 1910a-1910 g are routed between ink feed slots 1704 and 1706, and betweenink feed slots 1706 and 1708. The address lines 1910 a-1910 g are routedalong the entire length of ink feed slot 1708 between ink feed slot 1708and printhead die side 1900 b and along the other half of the lengths ofink feed slots 1704, 1706 and 1708 to electrically couple withpre-charged firing cells 120 in the second part of fire group 1702 c andfire groups 1702 d, 1702 e and 1702 f.

Data lines 208 a, 208 c, 208 e and 208 g are routed between printheaddie side 1900 a and ink feed slot 1704 and between ink feed slots 1706and 1708. Each of the data lines 208 a, 208 c, 208 e and 208 g routedbetween printhead die side 1900 a and ink feed slot 1704 is electricallycoupled to pre-charged firing cells 120 in two fire groups 1702 a and1702 d. Each of the data lines 208 a, 208 c, 208 e and 208 g routedbetween ink feed slots 1706 and 1708 is electrically coupled topre-charged firing cells 120 in four fire groups 1702 b, 1702 c, 1702 eand 1702 f. Data line 208 a is electrically coupled to pre-chargedfiring cells 120 in data line group D1 at 1710 to supply data signal˜D1. Data line 208 c is electrically coupled to pre-charged firing cells120 in data line group D3 at 1714 to supply data signal ˜D3. Data line208 e is electrically coupled to pre-charged firing cells 120 in dataline group D5 at 1718 to supply data signal ˜D5, and data line 208 g iselectrically coupled to pre-charged firing cells 120 in data line groupD7 at 1722 to supply data signal ˜D7. The data lines 208 a, 208 c, 208 eand 208 g receive data signals ˜D1, ˜D3, ˜D5 and ˜D7 and supply datasignals ˜D1, ˜D3, ˜D5 and ˜D7 to pre-charged firing cells 120 in each ofthe fire groups 1702 a-1702 f. In one embodiment, data lines 208 a, 208c, 208 e and 208 g are not routed the entire length of ink feed slots1704, 1706 and 1708. Instead, each of the data lines 208 a, 208 c, 208 eand 208 g is routed to its respective data line group from a bond padlocated along the side of printhead die 1900 nearest the data line groupin fire groups 1702 a-1702 f. Data lines 208 a and 208 c areelectrically coupled to a bond pad along side 1900 c of printhead die1900, and data lines 208 e and 208 f are electrically coupled to a bondpad along side 1900 d of printhead die 1900.

Data lines 208 b, 208 d, 208 f and 208 h are routed between ink feedslots 1704 and 1706 and between ink feed slot 1708 and printhead dieside 1900 b. Each of the data lines 208 b, 208 d, 208 f and 208 h routedbetween ink feed slots 1704 and 1706 is electrically coupled topre-charged firing cells 120 in four fire groups 1702 a, 1702 b, 1702 dand 1702 e. Each of the data lines 208 b, 208 d, 208 f and 208 h routedbetween ink feed slot 1708 and printhead die side 1900 b is electricallycoupled to pre-charged firing cells 120 in two fire groups 1702 c and1702 f. Data line 208 b is electrically coupled to pre-charged firingcells 120 in data line group D2 at 1712 to supply data signal ˜D2. Dataline 208 d is electrically coupled to pre-charged firing cells 120 indata line group D4 at 1716 to supply data signal ˜D4. Data line 208 f iselectrically coupled to pre-charged firing cells 120 in data line groupD6 at 1720 to supply data signal ˜D6, and data line 208 h iselectrically coupled to pre-charged firing cells 120 in data line groupD8 at 1724 to supply data signal ˜D8. The data lines 208 b, 208 d, 208 fand 208 h receive data signals ˜D2, ˜D4, ˜D6 and ˜D8 and supply the datasignals ˜D2, ˜D4, ˜D6 and ˜D8 to pre-charged firing cells 120 in each ofthe fire groups 1702 a-1702 f. In one embodiment, the data lines 208 b,208 d, 208 f and 208 h are not routed the entire length of ink feedslots 1704, 1706 and 1708. Instead, each of the data lines 208 b, 208 d,208 f and 208 h is routed to its respective data line group from a bondpad located along the side of printhead die 1900 nearest the data linegroup in fire groups 1702 a-1702 f. Data line 208 b and 208 d areelectrically coupled to a bond pad along side 1900 c of printhead die1900, and data lines 208 f and 208 h are electrically coupled to a bondpad along side 1900 d of printhead die 1900.

The conductive fire lines 214 a-214 f are located along ink feed slots1704, 1706 and 1708 to supply energy signals FIRE1, FIRE2 . . . FIRE6 tofire groups 1702 a-1702 f, respectively. The fire lines 214 a-214 fsupply energy to firing resistors 52 in conducting pre-charged firingcells 120 to heat and eject ink from drop generators 60. To uniformlyeject ink from each drop generator 60 in a fire group 1702 a-1702 f, thecorresponding fire line 214 a-214 f is configured to uniformly supplyenergy to each firing resistor 52 in the fire group 1702 a-1702 f.

Energy variation is the maximum percent difference in power dissipatedthrough any two firing resistors 52 in one of the fire groups 1702a-1702 f. The highest amount of power is found in the first firingresistor 52 of a fire group 1702 a-1702 f as only a single firingresistor 52 is energized, where the first firing resistor 52 is thefiring resistor 52 nearest the bond pad receiving the energy signalFIRE1, FIRE2 . . . FIRE6. The lowest amount of power is found in thelast firing resistor 52 of a fire group 1702 a-1702 f as all firingresistors 52 in a row subgroup are energized. Layout contributions toenergy variation include fire line width, ground line width, metalthickness and the length of the fire line 214 a-214 f. Energy variationsof 10 to 15 percent are preferred and energy variations up to 20 percenthave been found to be suitable energy variations.

Fire groups 1702 a-1702 f and fire lines 214 a-214 f are laid out alongink feed slots 1704, 1706 and 1708 to achieve a suitable energyvariation. The pre-charged firing cells 120 in a fire group 1702 a-1702f are located along opposing sides of an ink feed slot 1704, 1706 or1708. Instead of having all pre-charged firing cells 120 in a fire group1702 a-1702 f along the entire length of one side of an ink feed slot1704, 1706 or 1708, the pre-charged firing cells 120 in a fire group1702 a-1702 f are located along half of the length of each of theopposing sides of an ink feed slot 1704, 1706 or 1708. The length of thecorresponding fire line 214 a-214 f is reduced to half the length of anink feed slot 1704, 1706 or 1708 from one end of the ink feed slot 1704,1706 and 1708, as compared to the entire length of an ink feed slot1704, 1706 and 1708. Each of the fire lines 214 a-214 f are disposed onboth sides of an ink feed slot 1704, 1706 or 1708 and electricallycoupled at one end of the ink feed slot 1704, 1706 or 1708 to form asubstantially U-shaped fire line 214 a-214 f. The substantially U-shapedfire lines 214 a-214 f are effectively half the length of a fire linethat extends the entire length of an ink feed slot 1704, 1706 and 1708.The table below compares energy variation for substantially U-shapedfire lines 214 a-214 f with that of linear fire lines, that is, firelines that run the entire length of one side of an ink feed slot 1704,1706 and 1708.

Fire group Fire Gnd Metal % Row shape width width Die width thicknessevar A Substantially 250 um 115 um 4200 um 360 nm 11% U-shaped B Linear250 um 115 um 4200 um 360 nm 52% C Linear 250 um 115 um 4200 um 1440 nm 36% (4x thick) D Linear 750 um 615 um ~7200 um 360 nm 11% E Linear 515um 380 um ~5790 um 1140 nm  11% (4x thick)

As shown in the table, using a linear fire group with the same fireline, ground line and die width results in a larger and unsuitableenergy variation (11 percent verses 52 percent). The energy variationdifference is improved slightly by increasing metal thickness by fourtimes to reduce fire line resistance. However, the energy variation isstill unsuitable (11 percent verses 36 percent). Alternatively, toreduce the energy variation to 11 percent in a linear fire grouparrangement, the die width is increased.

The substantially u-shaped fire lines 214 a-214 f are electricallycoupled to pre-charged firing cells 120 disposed along each of theopposing sides of ink feed slots 1704, 1706 and 1708. Fire line 214 a iselectrically coupled to each of the pre-charged firing cells 120 in FG1at 1702 a. The fire line 214 a is disposed along each of the opposingsides of ink feed slot 1704 and extends from one end of ink feed slot1704 to half the length of ink feed slot 1704 in the y-direction. Thefire line 214 a supplies energy signal FIRE1 and energy pulses to FG1 at1702 a.

Fire line 214 b is electrically coupled to each of the pre-chargedfiring cells 120 in FG2 at 1702 b. The fire line 214 b is disposed alongeach of the opposing sides of ink feed slot 1706 and extends from oneend of ink feed slot 1706 to half the length of ink feed slot 1706 inthe y-direction. The fire line 214 b supplies energy signal FIRE2 andenergy pulses to FG2 at 1702 b.

Fire line 214 c is electrically coupled to each of the pre-chargedfiring cells 120 in FG3 at 1702 c. The fire line 214 c is disposed alongeach of the opposing sides of ink feed slot 1708 and extends from oneend of ink feed slot 1708 to half the length of ink feed slot 1708 inthe y-direction. The fire line 214 c supplies the energy signal FIRE3and energy pulses to FG3 at 1702 c.

Fire line 214 d is electrically coupled to each of the pre-chargedfiring cells 120 in FG4 at 1702 d. The fire line 214 d is disposed alongeach of the opposing sides of ink feed slot 1704 and extends from oneend of ink feed slot 1704 to half the length of ink feed slot 1704 inthe y-direction. The fire line 214 d supplies the energy signal FIRE4and energy pulses to FG4 at 1702 d.

Fire line 214 e is electrically coupled to each of the pre-chargedfiring cells 120 in FG5 at 1702 e. The fire line 214 e is disposed alongeach of the opposing sides of ink feed slot 1706 and extends from oneend of ink feed slot 1706 to half the length of ink feed slot 1706 inthe y-direction. The fire line 214 e supplies the energy signal FIRE5and energy pulses to FG5 at 1702 e.

Fire line 214 f is electrically coupled to each of the pre-chargedfiring cells 120 in FG6 at 1702 f. The fire line 214 f is disposed alongeach of the opposing sides of ink feed slot 1708 and extends from oneend of ink feed slot 1708 to half the length of ink feed slot 1708 inthe y-direction. The fire line 214 f supplies the energy signal FIRE6and energy pulses to FG6 at 1702 f.

While FIGS. 21 through 24 depict layouts that show address generatorsand/or an address latch on the printhead die, the address signals may beprovided from an external source as well. Where the address signals areprovided from an external source, address generators and/or addresslatches need not be provided on the printhead die. In this case, thelayouts described in FIGS. 21 through 24 may be exactly the same.

Referring to FIGS. 25A and 25B, diagrams illustrating contact areas 2000of a flex circuit 2002 that may be utilized to couple external circuitryto a printhead die 40 are illustrated. The contact areas 2000 areelectrically coupled via conductive paths 2004 to contacts 2006 whichprovide coupling to the printhead die.

Enable line contact areas E0-E6 are configured to receive enable signalsfrom an external source and to provide the enable signals, e.g. selectsignals SEL1-SEL6, precharge signals PRE1-PRE6, and the LATCH signal.However, it should be noted that the relationship between the linesdescribed with respect to FIGS. 4-8 and 11-24 and the contact areasE0-E6 need not be one to one, e.g. signal PRE1 need not be provided atcontact area E0. All that is required is that appropriate select linesand precharge lines are coupled to the appropriate enable contact areas.

Data line contact areas D1-D8 are configured to receive signals whichprovide print data representative of an image to be printed and toprovide data signals D1-D8 respectively, to the individual data linegroups, e.g. data line groups D1-D8. Fire line contact areas F1-F6configured to receive energy pulses and to provide the energy signalsalong fire lines Fire1-Fire6 to the appropriate fire groups, e.g. firegroups 202 a-202 f and 1702 a-1702 f. Ground line contact areas GD1-GD6are configured provide a return path for signals that are conducted bythe firing resistors from the fire groups, e.g. fire groups 202 a-202 for fire groups 1702 a-1702 f. Control signal contact area C isconfigured to receive a signal for controlling the internal operation ofthe printhead die, e.g. the CSYNC signal.

Temperature sense resistor contact area TSR allows a printer coupled toan ink jet cartridge to determine a temperature of the printhead die,based upon a measurement of the resistor. A temperature sense resistorreturn contact area TSR-RT provides a return path for signals providedat temperature sense resistor contact area TSR.

An identification bit contact area ID is coupled to identificationcircuitry on printhead die that allows a printer to determine theoperating parameters of the printhead die and print cartridge.

In one embodiment, an electrical path between contact areas 2000 and thepre-charged firing cells 120 comprises conductive paths 2004, contacts2006, and the appropriate signal lines, e.g. data lines 208 a-208 h,pre-charge lines 210 a-210 f, select lines 212 a-212 f, or ground lines.It should be noted that pre-charge lines 210 a-210 f and select lines212 a-212 f may be coupled to enable line contact areas E0-E6.

It should be noted that in certain embodiments the high voltage levelsdiscussed herein are at or above approximately 4.0 volts, while the lowvoltage levels discussed herein are at or below approximately 1.0 volts.Other embodiments may use different voltage levels than the previouslydescribed levels.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

1. A fluid ejection device, comprising: a first fire line adapted toreceive a first energy signal having energy pulses; a first addressgenerator configured to provide first address signals; first resistorselectrically coupled to the first fire line and to receive at least someof the first address signals, the first resistors configured to conductin response to the first energy signal to eject fluid based on the firstaddress signals and data signals indicative of image data; a second fireline adapted to receive a second energy signal having energy pulses; asecond address generator configured to provide second address signals;second resistors electrically coupled to the second fire line and toreceive the second address signals, the second resistors configured toconduct in response to the second energy signal to eject fluid based onthe second address signals and the data signals indicative of the imagedata; and a direction signal coupled to the first and second addressgenerators that operates a shift register of the generators in a forwardor a reverse direction.
 2. The fluid ejection device of claim 1, whereinthe first address generator is configured to generate the first addresssignals based on timing signals received by the fluid ejection deviceand the second address generator is configured to generate the secondaddress signals based on the timing signals.
 3. The fluid ejectiondevice of claim 2, comprising a control line adapted to receive acontrol signal having control pulses, wherein each of the control pulsescoincide with a pulse of the timing signals to control operation of thefirst and second address generators.
 4. The fluid ejection device ofclaim 1, wherein the first address generator provides valid firstaddress signals for three of six pulses in a repeating series of sixpulses and the second address generator provides valid second addresssignals for another three of the six pulses in the repeating series ofsix pulses.
 5. The fluid ejection device of claim 4, wherein the validfirst address signals and the valid second address signals reference thesame address during one cycle through the repeating series of sixpulses.
 6. The fluid ejection device of claim 1, comprising: a latchconfigured to receive first address signals and provide latched addresssignals based upon the first address signals; and second resistorsconfigured to eject fluid based on the latched address signals.
 7. Thefluid ejection device of claim 6, comprising signal lines adapted toreceive timing signals that provide a repeating series of pulses,wherein each of the signal lines is adapted to receive a different oneof a repeating series of pulses.
 8. The fluid ejection device of claim7, comprising a control line adapted to receive a control signal havingcontrol pulses that coincide with at least one of the pulses in therepeating series of pulses and to conduct the control pulses to thefirst address generator.
 9. The fluid ejection device of claim 1,wherein the shift register is configured to provide output signals, andwherein at least one of the first address generator and the secondaddress generator comprises: logic configured to receive the outputsignals and provide the corresponding one of the first address signalsor the second address signals in response to the output signals.
 10. Aprinthead die comprising: a first line adapted to conduct first pulses;a second line adapted to conduct second pulses; a controller including ashift register configured to provide at least one of a set of outputsignals, and switches configured so that at least two of the switchesreceive a predetermined one of the output signals and each of the atleast two switches provides a different one of a set of address signals;a first group of resistors coupled to conduct based upon a first atleast two signals of the set of address signals and the first pulses;and a second group of resistors coupled to conduct based upon a secondat least two signals of the set of address signals and the secondpulses, wherein the first at least two signals and the second at leasttwo signals each comprise at least one different signal from the other.11. The printhead die of claim 10, wherein the controller provides theset of address signals in a predetermined pattern.
 12. The printhead dieof claim 11, wherein the predetermined pattern comprises sequentiallyproviding at least two signals of the set of address signals during anytime period.
 13. The printhead die of claim 12, wherein the time periodduring which each group of at least two signals is provided has a sameduration.
 14. The printhead die of claim 10, wherein the set of addresssignals includes at least a first state and a second state, and whereinwhen the set of address signals are in the first state only the firstgroup of resistors are coupled to conduct and when the set of addresssignals are in the second state only the second group of resistors arecoupled to conduct.
 15. The printhead die of claim 10, wherein the setof address signals comprises a plurality of states and wherein thestates are provided in a sequence as the set of address signals by thecontroller.
 16. The printhead die of claim 15, wherein the set ofaddress signals are provided in a second sequence that is an inverse ofthe sequence, based upon a direction signal received by the controller.17. The printhead die of claim 10, wherein each of the at least two ofthe switches is a field-effect transistor, wherein the gates of all thetransistors are coupled to the predetermined one of the output signals,and wherein the drain of each of the transistors is coupled to adifferent line, each different line providing one of the set of addresssignals.